HBT3 Search Results

scr tic 106

Contextual Info: MP03 XXX 360 Series MITEL Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes January 1994 version, 3.2 DS4484-4.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint

scr tic 106

Abstract: MTO thyristor HBP MITEL
Contextual Info: M ITEL MP03 XXX 330 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes January 1994 version, 3.2 DS4483-4.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint

Contextual Info: LONG LIFE BAND AND NOZZLE HEATERS HBA Series 1" to 6" 3 to 15 cm Wide OnePiece Nozzle Heaters ߜ Nozzle Temps to 1000°F ߜ 42" (107 cm) Leads Standard ߜ Stainless Steel Clamp Included MADE IN USA Offers Longer Life than mica nozzle heaters. Cost less to operate. Heats up

Contextual Info: TGV2204-FC 19 GHz VCO with Prescaler Key Features • • • • • • • • Measured Performance Bias conditions: Vcc = 5 V, Itotal = 165 mA Frequency Range: 18.5 – 19.5 GHz Output Power: 7 dBm @ 19 GHz Phase Noise: -105 dBc/Hz at 1 MHz offset, fc=19 GHz

Contextual Info: 4L* R o c k w e ll Semiconductor Systems RÌ0352A Digital CMOS Imager DESCRIPTION FEATURES The Rockwell Ri0352A Digital CMOS Imager DCI chip is one component of Rockwell Semiconductor’s Universal Serial Bus (USB) camera system. It can also be used as a

B1354

Abstract: cn0352p Conexant System G24
Contextual Info: CN0352 Digital CMOS Imager The Conexant CN0352 Digital CMOS Imager DCI chip is one component of Conexant Universal Serial Bus (USB) camera system. It can also be used as a standalone device for various applications requiring a CIF resolution imager. The

smd transistor M30

Abstract: siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
Contextual Info: 7KH *D$V RXQGU\ +LVWRU\ Since 1975 Infineon Technologies former Siemens Semiconductors) has been engaged in research and development of III-V semiconductor components and circuits. The world‘s first commercially available GaAs MMIC was created by Infineon Technologies in 1981.

MTO thyristor

Abstract: thyristor SCR 1000A unial thyristor INR 330 HBP MITEL
Contextual Info: MITEL MP03 XXX 330 Series Phase Control Dual SCR, SCR/Diode Modules S E M IC O N D U C T O R Supersedes January 1994 version, 3.2 DS4483-4.0 D ecem ber 1998 FEATURES • ■ ■ ■ ■ Dual Device M odule Electrically Isolated Package Pressure C ontact Construction

ap 4744

Abstract: S1L50000 SLA5668 S1L50552 5v constant power supply lob mod 8 ring counter using JK flip flop TFA 98... series rm1 4607 circuit diagram dfl 210 epson ink level controller
Contextual Info: NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability of any kind arising out of any inaccuracies contained in

HBT3 triquint

Abstract: cu pillar TGV2204-FC pillar HBT3
Contextual Info: TGV2204-FC 19 GHz VCO with Prescaler Key Features • • • • • • • • Measured Performance Bias conditions: Vcc = 5 V, Itotal = 165 mA Frequency Range: 18.5 – 19.5 GHz Output Power: 7 dBm @ 19 GHz Phase Noise: -105 dBc/Hz at 1 MHz offset, fc=19 GHz

single phase half bridge controlled rectifier scr

Abstract: RECTIFIER DIODE 1000A 2500V RECTIFIER DIODE 1000A VRRM 2500V BUSBAR calculation datasheet MP03 3 phase scr drive CMP03 HBT300 busbar bolt torque value
Contextual Info: MP03 XXX 300 Series MP03 XXX 300 Series Phase Control Dual SCR, SCR/Diode Modules Replaces December 1998 version, DS4482-5.0 DS4482-6.0 January 2000 FEATURES KEY PARAMETERS 1600V VDRM ITSM 10600A IT AV (per arm) 312A 2500V Visol • Dual Device Module ■ Electrically Isolated Package

schematic diagram dc-ac inverter

Abstract: ba2p1t ic top 246 yn msi ms 1731 mod 8 ring counter using JK flip flop semiconductor SIM 8309 S1L EPSON SIM 8309 marking CODE GA rx 434 ask
Contextual Info: MF1246-04 GATE ARRAY S1L60000 Series DESIGN GUIDE NOTICE No part of this material may be reproduced or duplicated in any from or by any means without the written permission of EPSON. EPSON reserves the right to make changes to this material without notice. EPSON does not assume any liability of any kind arising out of any inaccuracies contained

transistor dk qh

Abstract: transistor DK ql HBT2 HBT3 ppg sensor photodiode Rockwell Semiconductor Systems
Contextual Info: Rockwell RÌ0352A Digital CMOS Imager DESCRIPTION FEATURES The Rockwell Ri0352A Digital CMOS Imager DCI chip is one component of Rockwell Sem iconductor’s Universal Serial Bus (USB) camera system. It can also be used as a standalone device for various applications requiring a CIF

RECTIFIER DIODE 1000A VRRM 2500V

Abstract: SCR TRIGGER PULSE 3 phase MP03
Contextual Info: MP03 XXX 330 Series MP03 XXX 330 Series Phase Control Dual SCR, SCR/Diode Modules Replaces December 1998 version, DS4483-4.0 DS4483-5.0 January 2000 FEATURES KEY PARAMETERS 1200V VDRM ITSM 10600A IT AV (per arm) 334A 2500V Visol • Dual Device Module ■ Electrically Isolated Package

Contextual Info: M ITEL MP03 XXX 360 Series Phase Control Dual SCR, SCR/Diode Modules S E M IC O N D U C T O R Supersedes January 1994 version, 3.2 DS4484-4.0 Decem ber 1998 FEATURES • ■ ■ ■ ■ D ual D e vice M o du le E le c tric a lly Isolated P a ckag e P re s s u re C o n ta c t C o n s tru c tio n

scr tic 106

Abstract: HBP MITEL
Contextual Info: M ITEL MP03 XXX 300 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR DS4482-5.0 December 1998 Supersedes January 1994 version, 4.2 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint