GTO GATE DRIVE Search Results

GTO catalogue

Abstract: SG1000EX23 toshiba gto
Contextual Info: 3. METHOD OF USE 3.1 METHOD OF USE FOR GTO 3.1.1 G a te Triggering Characteristics Supplying a gate cu rren t to such th y risto rs as GTO, etc., switches them from the off-state to the on-state. T h y ris to r gate characteristics include gate trigger voltage, gate trigger current, gate non-trigger voltage,

Contextual Info: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA sid@genesicsemi.com Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.

GTO thyristor Application notes

Abstract: Thomson-CSF capacitors FPX86Y1254J GTO thyristor Thomson-CSF THYRISTOR 100 amp 1000 volt GTO Thomson-CSF passive components FPX86Y0505J Thomson-CSF ceramic capacitor FPX86Y0275J
Contextual Info: FPX RANGE Capacitor for Power Electronics Preliminary data sheet Preliminary data FPX Applications Protection of thyristors . Protection of gate turn off thyristor GTO . Clamping (Secondary snubber) . Technology Metallized polypropylene dielectric capacitor with controlled self healing .

fuji igbt transistor modules

Abstract: 1mbi1200u fuji inverter LM 1MBI1600U4C-120 fuji transistor modules fuji bipolar transistor GTO thyristor diode fuji order number M143 1MBI1200
Contextual Info: High-power IGBT Modules for Industrial Use Takashi Nishimura Hideaki Kakiki Takatoshi Kobayashi 1. Introduction Power devices used in industrial-use high capacity inverter system applications are predominately GTO gate turnoff thyristors, which easily handle high

CCSTA14N40

Abstract: FP4651 Solidtron gto thyristor SCR 957
Contextual Info: CCSTA14N40 N-Type, ThinPakTM Preliminary Data Sheet Description Package This current controlled Solidtron CCS discharge switch is an ntype Thyristor in a high performance ThinPakTM package. The device gate is similar to that found on a traditional GTO Thyristor.

TGS 2600

Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
Contextual Info: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

SG DIODE

Abstract: ic Thyristor firing circuit GT01000 MGT01200 GTO MOTOROLA
Contextual Info: M O T O R O L A SC DIODE S/ OP TO h3b7'2SS GQail03 =| • 2SE D r - a s w f MGT01000 MGT01200 Gate Turn-Off Thyristors The GTO is a fam ily of asym m etric gate turn-off thyristors designed prim arily for dc pow er sw itching applications such as m otor drives, sw itching pow er supplies,

GTO 6500V

Contextual Info: M ITEL DGT409BC A6565 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1998 version, DS4414-2.1 APPLICATIONS The D G T409 BCA is a sym m etrical GTO designed for applications w hich specifically require a reverse blocking capability, such as current source inverters CSI . R everse

LTCM

Contextual Info: M ITEL DGT409BC A6565 Gate Turn-off Thyristor SEMICONDUCTOR DS4414-3.3 July 1998 Supersedes March 1998 version, DS4414-2.1 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

GK2E

Abstract: GK2BN GK2D GTO thyristor GK2C GTO thyristor driver lt 860 thyristor 800A GK20 GK-20
Contextual Info: NIHON INTER ELE CTRONICS S1E D • bblS123 0D0D03T h ■ T i- 4 / - # ? SPECIFICATIONS [El GATE DRIVER MODULES FOR GTO THYRISTOR \T y p e absolute maximum ra ting s G K2AN GK20 GK 2B N *G K 2 D 358RÛAI0O-120 A / {O3POA1OOA-120A \ 1 Ì20 PGA!OOA~I20A \ Fw 359RGAI0CM20 0T0 IFcr

2n6800

Abstract: saft rectifier
Contextual Info: UNITRODE CORP 9347963 TE3 UNITRODE CORP De " | 92D 10578 POWER MOSFET TRANSISTORS 1T 4 00 Volt, 1.0 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability 0Ü10S7Ô

Contextual Info: GDU 90 20302 JULY 1996 DS4563 - 2.3 GDU 90 20302 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current switching

Honeywell v3

Contextual Info: GDU 90 20310 JULY 1996 DS4564 - 1.2 GDU 90 20310 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current switching

GTO gate drive unit

Contextual Info: GDUJULY 91 20222 1996 DS4570 - 2.0 GDU 91 20222 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. APPLICATIONS KEY PARAMETERS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current switching

Contextual Info: JULY 1996 GDU 90 20721 DS4567 - 2.0 GDU 90 20721 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. APPLICATIONS KEY PARAMETERS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current switching

Contextual Info: GDU 90 20421 JULY 1996 DS4565 - 1.1 GDU 90 20421 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. APPLICATIONS KEY PARAMETERS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current

Contextual Info: GDUJULY 90 20301 1996 DS4562 - 3.3 GDU 90 20301 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. APPLICATIONS KEY PARAMETERS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current switching

Contextual Info: GDUJULY 90 20722 1996 DS4568 - 2.0 GDU 90 20722 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current switching

F312

Abstract: F312U
Contextual Info: UNITROD E CORH 9347963 ~ ^ DE | =1 3 4 7 ^ 3 QGlOflS? b U N I T R O D E CORP 92D 10857 D f ^ ’O l POWER IVIOSFET TRANSISTORS ^ nfI u 400 Volt, 3.6 Ohm UFNF312 UFNF313 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling » No Second Breakdown

AN4839

Abstract: RC5327230 Honeywell v3
Contextual Info: GDU 90 20722 GDU 90-20722 Gate Drive Unit Replaces March 1998 version, DS4568-3.1 DS4568-4.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON

AN4839

Contextual Info: GDU 90-20721 GDU 90-20721 Gate Drive Unit Replaces March 1998 version, DS4567-3.1 DS4567-4.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. APPLICATIONS KEY PARAMETERS IFGM IG ON

Contextual Info: UNITRODE CORP 9347963 T2 UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10572 D 2N6797 JTX, JTXV 2N6798 POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

DS4570-3

Abstract: AN4839 20222
Contextual Info: GDU 91 20222 GDU 91-20222 Gate Drive Unit Replaces March 1998 version, DS4570-3.1 DS4570-4.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. APPLICATIONS KEY PARAMETERS IFGM IG ON

AN4839

Abstract: GTO gate drive unit
Contextual Info: GDU 90 20422 GDU 90-20422 Gate Drive Unit Replaces March 1998 version, DS4566-2.1 DS4566-3.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. APPLICATIONS KEY PARAMETERS IFGM IG ON