GTO GATE DRIVE Search Results

Improved Gate Drive for GTO Series Connections

Abstract: gto Gate Drive circuit snubber IGCT GTO gate drive unit gto 20A GTO switching circuit dynex GTO gtos AN5177-3 DGT409
Contextual Info: AN5177 Application Note AN5177 Improved Gate Drive For GTO Series Connections Application Note Replaces September 2000 version, AN5177-3.0 AN5177-3.1 July 2002 Using an improved gate drive to ease GTO series connection problems. INTRODUCTION There are problems encountered with dynamic voltage sharing

THYRISTOR GTO

Abstract: rkm THYRISTOR GTO rkm v SDG250 SDG250HB SDG250HD SDG250HF SDG250HH SDG250HK 600a thyristor gate turn off
Contextual Info: SDG250 77mm SYM GTO 4500V / 2500A SPCO Type SDG250 reverse blocking gate turn-off thyristor, GTO, is manufactured by the proven multi-dif­ fusion process and incorporates a unique emitter design patent issued which offers distinct advantages for improving the gate turn-off conditions.

GTO catalogue

Abstract: SG1000EX23 toshiba gto
Contextual Info: 3. METHOD OF USE 3.1 METHOD OF USE FOR GTO 3.1.1 G a te Triggering Characteristics Supplying a gate cu rren t to such th y risto rs as GTO, etc., switches them from the off-state to the on-state. T h y ris to r gate characteristics include gate trigger voltage, gate trigger current, gate non-trigger voltage,

GTO thyristors

Abstract: S0700KC17D H0500KC25Y S0700KC17Y S1200NC25Y S0500KC20Y GTO thyristor H0500KC200 H1200NC200 westcode Inverter Diode
Contextual Info: PRODUCT BRIEF Gate Turn-off Thyristors May 2009 Issue 6 A broad range of high specification GTO thyristors are available with blocking voltages from 1.7 kV to 6 kV and controllable current ratings to 4000A. Our GTO thyristor portfolio incorporates a range of advanced

Contextual Info: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA sid@genesicsemi.com Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.

GTO thyristor Application notes

Abstract: gto Gate Drive circuit HP optocoupler GTO gate drive unit DG306A GTO thyristor THYRISTOR GTO DGT304SE DGT409BCA AN4571
Contextual Info: GDU 9X-XXXXX Series GDU 9X-XXXXX Series GTO Gate Drive Units Application Note Replaces March 1998 version, AN4571 - 5.1 AN4571-6.0 January 2000 This application note should be used in conjunction with individual Gate Drive Unit datasheets which contain electrical, timing and outline

GTO thyristor

Abstract: 40A GTO thyristor GTO thyristor driver thyristor inverter circuit diagram THYRISTOR GTO GTO thyristor Application notes gto Gate Drive circuit vvvf speed control of 3 phase induction motor GTO gate drive unit Snubber circuits theory, design and application
Contextual Info: MITSUBISHI HIGH POWER SEMICONDUCTORS MITSUBISHI HIGH POWER SEMICONDUCTORS FEATURE AND APPLICATIONAND OF GATE TURN-OFF THYRISTORS FEATURE APPLICATION OF GATE TURN-OFF THYRISTORS Gate turn-off GTO thyristors are able to not only turn on the main current but also turn it off, provided with a gate drive circuit. Unlike conventional thyristors, they have no commutation circuit, downsizing application systems while improving

GTO thyristor Application notes

Abstract: Thomson-CSF capacitors FPX86Y1254J GTO thyristor Thomson-CSF THYRISTOR 100 amp 1000 volt GTO Thomson-CSF passive components FPX86Y0505J Thomson-CSF ceramic capacitor FPX86Y0275J
Contextual Info: FPX RANGE Capacitor for Power Electronics Preliminary data sheet Preliminary data FPX Applications Protection of thyristors . Protection of gate turn off thyristor GTO . Clamping (Secondary snubber) . Technology Metallized polypropylene dielectric capacitor with controlled self healing .

fuji igbt transistor modules

Abstract: 1mbi1200u fuji inverter LM 1MBI1600U4C-120 fuji transistor modules fuji bipolar transistor GTO thyristor diode fuji order number M143 1MBI1200
Contextual Info: High-power IGBT Modules for Industrial Use Takashi Nishimura Hideaki Kakiki Takatoshi Kobayashi 1. Introduction Power devices used in industrial-use high capacity inverter system applications are predominately GTO gate turnoff thyristors, which easily handle high

DGT409BCA

Abstract: TGS 2600 current source inverter TGS 800 GTO thyristor GTO thyristor 3000V 800A gto Gate Drive circuit 150a gto Gate Turn-Off Thyristors GTO thyristor Application notes
Contextual Info: DGT409BCA Reverse Blocking Gate Turn-off Thyristor DS4414-4.2 December 2007 LN25790 APPLICATIONS KEY PARAMETERS The DGT409BCA is a symmetrical GTO designed for applications, which specifically require a reverse blocking capability, such as current source inverter

MGT01000

Abstract: CS thyristor cs 3-04 7623A MGT01200 pearson 411 1N6292 221A-04 SG diodes high speed low power thyristor Gate Turn-Off Thyristors
Contextual Info: MOTOROLA SC DIODES/OPTO k3b?2S5 0001103 =| • 25E D r - a s w f Gate Turn-Off Thyristors The GTO is a family of asym metric gate turn-off thyristors designed primarily for dc power switching applications such as motor drives, switching power supplies, inverters, or wherever a need exists for high surge current capabilities and fast

TGS 2600

Abstract: GTO thyristor 3000V 800A 150a gto DGT409BCA DGT409BCA6565 TGS 200
Contextual Info: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

CCSTA14N40

Abstract: FP4651 Solidtron gto thyristor SCR 957
Contextual Info: CCSTA14N40 N-Type, ThinPakTM Preliminary Data Sheet Description Package This current controlled Solidtron CCS discharge switch is an ntype Thyristor in a high performance ThinPakTM package. The device gate is similar to that found on a traditional GTO Thyristor.

TGS 2600

Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
Contextual Info: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

GTO 6500V

Contextual Info: M ITEL DGT409BC A6565 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1998 version, DS4414-2.1 APPLICATIONS The D G T409 BCA is a sym m etrical GTO designed for applications w hich specifically require a reverse blocking capability, such as current source inverters CSI . R everse

LTCM

Contextual Info: M ITEL DGT409BC A6565 Gate Turn-off Thyristor SEMICONDUCTOR DS4414-3.3 July 1998 Supersedes March 1998 version, DS4414-2.1 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse

Contextual Info: March 1993 74ACTQ00 Quiet Series Quad 2-Input NAND Gate General Description Features The ACTQOO contains four 2-input NAND gates and utilizes NSC Quiet Series technology to guarantee quiet output switching and improve dynamic threshold performance. FACT Quiet Series features GTO™ output control and

GK2E

Abstract: GK2BN GK2D GTO thyristor GK2C GTO thyristor driver lt 860 thyristor 800A GK20 GK-20
Contextual Info: NIHON INTER ELE CTRONICS S1E D • bblS123 0D0D03T h ■ T i- 4 / - # ? SPECIFICATIONS [El GATE DRIVER MODULES FOR GTO THYRISTOR \T y p e absolute maximum ra ting s G K2AN GK20 GK 2B N *G K 2 D 358RÛAI0O-120 A / {O3POA1OOA-120A \ 1 Ì20 PGA!OOA~I20A \ Fw 359RGAI0CM20 0T0 IFcr

Contextual Info: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.20 rT = 0.65 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGF 40L4502 mΩ V Doc. No. 5SYA 1209-04 April 98 Features The 5SGF 40L4502 is a 91 mm buffered layer GTO with exceptionally low dynamic and static

30J4502

Abstract: capacitor abb 5sgf30j4502 GTO thyristor ABB
Contextual Info: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 1.80 rT = 0.70 VDClink = 3000 V A kA V Gate turn-off Thyristor 5SGF 30J4502 mΩ V Doc. No. 5SYA 1211-04 April 98 Features The 5SGF 30J4502 is a 85 mm buffered layer GTO with exceptionally low dynamic and static

GTO Snubber Capacitor

Abstract: 30J60
Contextual Info: Key Parameters VDRM = 6000 ITGQM = 3000 ITSM = 24 VT0 = 1.70 rT = 0.60 VDClink = 3800 V A kA V Gate turn-off Thyristor 5SGT 30J6004 mΩ V Doc. No. 5SYA 1212-04 April 98 Features The 5SGT 30J6004 is an 85 mm buffered layer, Transparent Emitter non-shorted anode GTO

40L4502

Abstract: 123500
Contextual Info: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 1.08 rT = 0.29 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 Marketing Information mΩ V Doc. No. 5SYA 1235-00 Oct. 98 Features The 5SGT 40L4502 is an 91 mm buffered layer, Transparent Emitter non-shorted anode GTO

2n6800

Abstract: saft rectifier
Contextual Info: UNITRODE CORP 9347963 TE3 UNITRODE CORP De " | 92D 10578 POWER MOSFET TRANSISTORS 1T 4 00 Volt, 1.0 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability 0Ü10S7Ô

Contextual Info: GDU 90 20302 JULY 1996 DS4563 - 2.3 GDU 90 20302 GATE DRIVE UNIT This data sheet should be used in conjuction with the publication entitled GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON dIGQ/dt • Used with Gate Turn-Off Thyristors in high current switching