GTO 5A 500V Search Results

2N6975

Abstract: 2n6978 2N6976 2N6977 AN7254 AN7260
Contextual Info: 2N6975, 2N6976, 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW • 5A, 400V and 500V • VCE ON 2V COLLECTOR (FLANGE) EMITTER • TFI 1µs, 0.5µs • Low On-State Voltage GATE • Fast Switching Speeds

Contextual Info: FRS440D, FRS440R, FRS440H 5A, 500V, 1.420 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 5A, 500V, RDS on = 1.420Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

FQB5N50CF

Abstract: FQB5N50CFTF FQB5N50CFTM
Contextual Info: FRFET TM FQB5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)

TL494 full bridge inverter

Abstract: dc motor speed control tl494 switching power supply TL494 WELDING TL494 full bridge IR2N6547 Speed control of dc motor using TL494 Ruttonsha make Power diode ratings ir in4007 full bridge TL494 946b
Contextual Info: APPLICATION NOTE 946B High Voltage, High Frequency Switching Using a Cascode Connection of HEXFET and Bipolar Transistor H E X FE T is the tra dem ark fo r In te rn a tio n a l R e c tifie r P ow er M O S FETs By S. CLEM EN TE, a . PELLY, R. R U T T O N S H A , B. TAYLOR

2E12

Abstract: 3E12 FRS440D FRS440H FRS440R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS440D, FRS440R, FRS440H 5A, 500V, 1.420 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 500V, RDS on = 1.420Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)

FQPF5N50CF

Contextual Info: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)

Contextual Info: TM FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDPF5N50T

Abstract: MOSFET 500V 5A
Contextual Info: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

mosfet 500V 5A

Abstract: FDPF5N50 FDP5N50
Contextual Info: UniFETTM FDP5N50 / FDPF5N50 tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDPF7N50U

Abstract: FDP7N50U
Contextual Info: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)

FQPF5N50CF

Abstract: DATE CODE FAIRCHILD
Contextual Info: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)

FQPF*5n50c

Abstract: FQP5N50C FQPF Series FQPF5N50C application notes FQPF5N50C fqpf5N50C equivalent
Contextual Info: TM FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQD5N50C

Abstract: FQU5N50C
Contextual Info: TM FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FDD5N50UTM

Abstract: FDD5N50U FDD5N50UTF
Contextual Info: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

fqpf5n50c

Abstract: FQPF*5n50c fqpf5N50C equivalent FQP5N50C
Contextual Info: TM FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: TM FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FDD5N50FTM

Abstract: FDD5N50F FDD5N50FTF
Contextual Info: UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,