GT60J Search Results

GT60J321

Contextual Info: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications • Enhancement-mode • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)

GT60J323

Abstract: GT60J IC-3360 PF1510000
Contextual Info: GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.16 s typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)

Contextual Info: GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.16 s typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)

Contextual Info: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications • Unit: mm Enhancement-mode • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)

GT60J322

Abstract: IC601
Contextual Info: GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 Fourth Generation IGBT Soft Switching Applications Unit: mm • Enhancement mode type • Low saturation voltage: VCE sat = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C)

Contextual Info: GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances • • • • • • Unit: mm Enhancement mode type High speed : tf = 0.12 s typ. (IC = 60A)

Contextual Info: GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm • Enhancement-mode · Low saturation voltage: VCE sat = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics

GT60J322

Contextual Info: GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications • Enhancement-mode • Low saturation voltage: VCE sat = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics

GT60J321

Contextual Info: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications Unit: mm • Enhancement-mode · High speed: tf = 0.30 µs typ. (IC = 60 A) · Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)

GT60J321

Contextual Info: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 Fourth Generation IGBT Soft Switching Applications Unit: mm • Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)

60j323

Abstract: 60J323H induction heating ic toshiba marking code transistor
Contextual Info: GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances • • • • • • Unit: mm Enhancement mode type High speed : tf = 0.12 s typ. (IC = 60A)

GT60J322

Contextual Info: GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm • Enhancement-mode • Low saturation voltage: VCE sat = 1.25 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics

induction heating handbook

Abstract: GT60J323H 60J323H
Contextual Info: GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Unit: mm Induction Heating Appliances • • • • • • Enhancement mode type High speed : tf = 0.12 µs typ. (IC = 60A)

GT60J321

Contextual Info: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 Fourth Generation IGBT Soft Switching Applications Unit: mm • Enhancement mode type • High speed: tf = 0.30 s typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)

GT60J323

Contextual Info: GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed : tf = 0.16 µs typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)

60J323H

Abstract: GT60J323H 60j323 TOSHIBA 120A igbt GT60J323
Contextual Info: GT60J323H 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT60J323H ○ 電流共振スイッチング用 ○ IH 調理器用・IH 機器用 単位: mm • 取り扱いが簡単なエンハンスメントタイプです。

IC601

Abstract: GT60J321 pfs300
Contextual Info: GT60J321 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT60J321 ○ 第 4 世代 ○ ソフトスイッチングインバータ用 単位: mm • 取り扱いが簡単なエンハンスメントタイプです。 •

GT60J323

Abstract: AIC15
Contextual Info: GT60J323 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT60J323 ○ 電流共振インバータスイッチング用 単位: mm • 取り扱いが簡単なエンハンスメントタイプです。 • スイッチング時間が速い。

GT60J323

Abstract: 041 DIODE
Contextual Info: GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed : tf = 0.16 µs typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)

GT60J321

Contextual Info: GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 Fourth Generation IGBT Soft Switching Applications Unit: mm • Enhancement mode type • High speed: tf = 0.30 µs typ. (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

circuit diagram of luminous inverter

Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
Contextual Info: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

GT30F124

Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Contextual Info: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor