GT30J341 Search Results

GT30J341 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT30J341		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 33 A, Built-in Diodes, TO-3P(N)	Datasheet

GT30J341 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
GT30J341		Toshiba	Transistors	Original	PDF	302.21KB	10
GT30J341		Toshiba	Japanese - Transistors	Original	PDF	411.48KB	10
GT30J341		Toshiba	GT30J341 - TRANSISTOR IGBT, Insulated Gate BIP Transistor	Original	PDF	302.22KB	10
GT30J341,Q		Toshiba Semiconductor and Storage	IGBT TRANS 600V 30A TO3PN	Original	PDF	302.71KB	10

GT30J341 Price and Stock

Filter by Manufacturer

Toshiba America Electronic Components


Toshiba America Electronic Components GT30J341,Q IGBT 600V 59A TO-3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT30J341,Q	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	GT30J341,Q	Tray			100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components GT30J341,STA1E(S Trans IGBT Chip N-CH 600V 59A 230W 3-Pin(3+Tab) TO-3PN Magazine
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	GT30J341,STA1E(S		15		15	1 - 10 - 100 $3.54 1000 $3.54 10000 $3.54	Buy Now

GT30J341 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: GT30J341 ディスクリートIGBT シリコンNチャネルIGBT GT30J341 1. 用途 • モータドライブ用 2. 特長 1 第6世代品 (2) 飽和電圧が低い: VCE(sat) = 1.5 V (標準) (IC = 30 A) (3) 接合温度が高い: Tj = 175 (最大) (4)	Original	GT30J341	PDF
Contextual Info: GT30J341 Discrete IGBTs Silicon N-Channel IGBT GT30J341 1. Applications • Motor Drivers 2. Features 1 Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 30 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector	Original	GT30J341	PDF
GT30J341 Contextual Info: GT30J341 Discrete IGBTs Silicon N-Channel IGBT GT30J341 1. Applications • Motor Drivers 2. Features 1 Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 30 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector	Original	GT30J341 GT30J341	PDF
fast tlp785 Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH Contextual Info: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W	Original	SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH	PDF
gt50jr22 Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W Contextual Info: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various	Original	SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W	PDF