GT30J341 Search Results
GT30J341 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| GT30J341 | Toshiba Electronic Devices & Storage Corporation | IGBT, 600 V, 33 A, Built-in Diodes, TO-3P(N) | Datasheet |
GT30J341 Datasheets (4)
Select Manufacturer
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| GT30J341 | Toshiba | Transistors | Original | 302.21KB | 10 | ||
| GT30J341 | Toshiba | Japanese - Transistors | Original | 411.48KB | 10 | ||
| GT30J341 | Toshiba | GT30J341 - TRANSISTOR IGBT, Insulated Gate BIP Transistor | Original | 302.22KB | 10 | ||
| GT30J341,Q | Toshiba Semiconductor and Storage | IGBT TRANS 600V 30A TO3PN | Original | 302.71KB | 10 |
GT30J341 Price and Stock
Toshiba America Electronic Components
Toshiba America Electronic Components GT30J341,Q- Trays (Alt: GT30J341,Q) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT30J341,Q | Tray | 100 |
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GT30J341,Q | 13,393 |
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Get Quote | |||||||