GSC218 Search Results

Contextual Info: S AN K E N ELECTRIC CO LT3> 3SE m D DQGGSS7 7 E3SAKJ '? mAVALANCHE DIODES ü Izsm A Mom entary Tstg fC ) 3.0 —40~+130 1.0 —40~ +150 SO 130 R 2M R Y 23 200 R Y 24 400 0.1 IfKHJ 0*A) 5 20 3 10 50 3 GSC218 180 3 G SC 2 35 350 GSC315 150 GSC318 180 Vz (V)

Contextual Info: GSC218 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5 @Temp (øC) (Test Condition)114 V(RRM)(V) Rep.Pk.Rev. Voltage180 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.20 V(FM) Max.(V) Forward Voltage.9 @I(FM) (A) (Test Condition)2.5

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

GSC318

Abstract: gsc3 GSC218
Contextual Info: SERIES GS GaAs POWER SCHOTTKX DIODES Providing the ultimate in high-voltage, high-trequency rectification effeciency, gallium-arsenide Schottky diodes are a major improvement in rectifier technology. Gallium-arsenide Schottky diodes are essentially free of storage

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

diode ry24

Abstract: UX-C2B diode zener RM25 FMPG5F fmgg2s FMPG2F RY24 RBV150S zener 3B2 RM25 zener diode
Contextual Info: Selection Guide Rectifier Diodes Type No. I F（AV） （A） VRM（V） 40 50 60 100 200 400 600 800 1,000 I FSM （A） SFPM-5＊ 0.9 2 4 30 SFPM-6＊ 1.0 2 4 45 AM01＊ 1.0 Z ― A 35 EM01＊ 1.0 Z ― A 45 EM 1＊ 1.0 Z ― A 45 EM 1＊ 1.0 EM 2＊ 1.2

HVR 1X 7

Abstract: hvr-1x 7 UX-C2B HVR-1X -7 HVR-1X microwave SK HVR-1X HVR-1X 9 HVR-1X SK HVR-1X 6 HVR-1X-4
Contextual Info: 5-9. High Voltage Rectifier Diodes Ta = 25°C Absolute Maximum Ratings Type No. SHV-02 SHV-03S SHV-03 -10 -12 -14 -16 -20 -24 SHV-06EN -08EN -10EN -12EN SHV-08DN -10DN -12DN VRM IF (AV) IFSM TC (kV) (mA) * 2 3 3 10 12 2.0 14 16 20 24 6 8 10 12 2.0 8 10 12

Contextual Info: GaAs Schottky Barrier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter 50Hz Half-cycle Sinewave Single Shot max per element IF （A） 5.0 20 0.9 2.5 1.0 14.0 50 0.9 7.0 3.0 180 −40 to ＋150 35 7.0 0.9 t /T＝1/3 3 t /T＝1/6

SE110N

Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)

IR0A

Abstract: RY24
Contextual Info: 3SE T> E3 7 ^ 0 7 4 1 DD00SS3 T S A K J “P 0 3 - 0 1 SANKEN ELECTRIC CO LTD !RECTIFIER. DIODES BRIDGE TYPE qa=25°C) M a xim u m ra tin g s (V) RB-150 100 -152 200 -154 400 -156 600 800 600 R BA-401 100 -4 02 200 R B V -404 400 -4 0 6 600 -4 0 8 800

Contextual Info: GaAs POWER SCH OTTKY DIODES Providing the ultimate in high-voltage, high-frequency rectification effeciency, gallium-arsenide Schottky diodes are a major improvement in rectifier technology. Gallium-arsenide Schottky diodes are essentially free of storage

HVR-1X 7 diode

Abstract: hvr 1X 7 diode HVR-1X diode HVR-1X 6 diode HVR 1X 7 HVR-1X HVR-1X 7 FMCG2 HVR-1X -7 hvr 1X 3 diode
Contextual Info: Selection Guide Rectifier Diodes Type No. SFPM-5 * SFPM-6 * AM01 * EM01 * EM 1 * EM 2 * RM 1 * RM 11 * RM 10 * RM 2 * RO 2 * RM 3 * RM 4 * RM 4 M * FMM-2 * FMM-3 * RBV-40 * RBV-40 M * RBV-40 H * RBV-60 * RBV-60 H * RBV-130 * RBV-150 * RBV-150 S * RBV-250 *

HVR-1X 7 diode

Abstract: FMS-3FU HVR-1X 6 diode MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FMPG5F rk36 diode rk14 diode HVR-1X 7 diode RU 3AM HVR-1X diode
Contextual Info: DIODES RECTIFIER DIODES Absolute Maximum Ratings Type No. VRM IO IFSM V (A) (A) Elec. Char. at 25°C VF 200 SFPM-54 400 SFPM-62 200 SFPM-64 Abs. Max. Ratings Type No. Max. @ IF(µA) (V) SFPM-52 IR 0.9 30 1.0 1.0 45 0.98 (A) VRM IO IFSM (V) (A) (A) Max. 10

Contextual Info: GaAs Schottky Barrier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter max per element max per element IF (A) max per element 20 0.9 2.5 1.0 GSC315 150 180 GSF18R 180 (ns) dI F /dt= IF /IRP 100A /µs (mA) –40 to +150 0.9