GS8644Z36GE Search Results

GS8644Z36GE-250

Abstract: GS8644Z18 GS8644Z18B GS8644Z36B GS8644Z72C
Contextual Info: Preliminary GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

Contextual Info: GS8644Z18E/GS8644Z36E 165-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15

mcm 250

Contextual Info: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

GS8644Z

Contextual Info: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

Contextual Info: GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

Contextual Info: Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

Contextual Info: GS8644Z18E/GS8644Z36E 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

Contextual Info: Preliminary GS8644Z18 B/E /GS8644Z36(B/E)/GS8644Z72(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and

Contextual Info: Preliminary GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

Contextual Info: GS8644Z18/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the

GS8644Z18E-250I

Abstract: 8644ZXX gs8644z36ge GS8644Z18E-133 GS8644Z18E-150 GS8644Z18E-166 GS8644Z18E-200 GS8644Z18E-225 GS8644Z18E-250 GS8644Z36
Contextual Info: GS8644Z18E/GS8644Z36E 165-Pin BGA Commercial Temp Industrial Temp 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the