GS864436GE Search Results
GS864436GE Price and Stock
GSI Technology GS864436GE-133SRAM Chip Sync Quad 2.5V/3.3V 72M-Bit 2M x 36 8.5ns/4ns 165-Pin FBGA Tray - Trays (Alt: GS864436GE-133) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GS864436GE-133 | Tray | 24 Weeks | 105 |
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GS864436GE-133 |
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GSI Technology GS864436GE-150IVSRAM Chip Sync Quad 1.8V/2.5V 72M-Bit 2M x 36 8.5ns/3.3ns 165-Pin FBGA Tray - Trays (Alt: GS864436GE-150IV) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GS864436GE-150IV | Tray | 24 Weeks | 105 |
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GS864436GE-150IV |
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GS864436GE-150IV | 27 Weeks | 105 |
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GSI Technology GS864436GE-133ISRAM Chip Sync Quad 2.5V/3.3V 72M-Bit 2M x 36 8.5ns/4ns 165-Pin FBGA Tray - Trays (Alt: GS864436GE-133I) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GS864436GE-133I | Tray | 24 Weeks | 105 |
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GS864436GE-133I |
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GSI Technology GS864436GE-250SRAM Chip Sync Quad 2.5V/3.3V 72M-Bit 2M x 36 6.5ns/2.5ns 165-Pin FBGA Tray - Trays (Alt: GS864436GE-250) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GS864436GE-250 | Tray | 24 Weeks | 105 |
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GS864436GE-250 |
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GS864436GE-250 | 27 Weeks | 105 |
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GSI Technology GS864436GE-150VSRAM Chip Sync Quad 1.8V/2.5V 72M-Bit 2M x 36 8.5ns/3.3ns 165-Pin FBGA Tray - Trays (Alt: GS864436GE-150V) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GS864436GE-150V | Tray | 24 Weeks | 105 |
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Buy Now | |||||
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GS864436GE-150V |
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GS864436GE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Preliminary GS864418/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edge-triggered Data Output |
Original |
GS864418/36E-xxxV 165-Bump 133MHz x18/x36 8644Vxx | |
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Contextual Info: GS864418/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edge-triggered Data Output |
Original |
GS864418/36E-xxxV 165-Bump 133MHz x18/x36 165-borrected 8644Vxx | |
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Contextual Info: Preliminary GS864418/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edge-triggered Data Output |
Original |
GS864418/36E-xxxV 165-Bump 133MHz x18/x36 8644Vxx | |
GS864418
Abstract: GS864418B GS864418B-250
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Original |
GS864418 /GS864436 /GS864472 209-Pin 133MHz 8644xx GS864418B GS864418B-250 | |
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Contextual Info: GS864418/36E-250/225/200/166/150/133 165-Bump BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user |
Original |
GS864418/36E-250/225/200/166/150/133 165-Bump 133MHz 8644xx | |
GS864418
Abstract: GS864418B GS864418B-250
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Original |
GS864418 /GS864436 /GS864472 209-Pin 133MHz 8644xx GS864418B GS864418B-250 | |
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Contextual Info: GS864418/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edge-triggered Data Output |
Original |
GS864418/36E-xxxV 165-Bump 133MHz x18/x36 8644Vxx 8644xx | |
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Contextual Info: GS864418/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edge-triggered Data Output |
Original |
GS864418/36E-xxxV 165-Bump 133MHz x18/x36 8644Vxx 8644xx | |
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Contextual Info: Preliminary GS864418 B/E /GS864436(B/E)/GS864472(C) 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Flow Through/Pipeline Reads |
Original |
GS864418 /GS864436 /GS864472 209-Pin 133MHz x18/x36 8644xx | |
|
Contextual Info: Preliminary GS864418/36E-xxxV 165-Bump BGA Commercial Temp Industrial Temp 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs Features 250 MHz–133MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the rising-edge-triggered Data Output |
Original |
GS864418/36E-xxxV 165-Bump 133MHz x18/x36 8644Vxx | |
BGA165
Abstract: GS864436GE GS864436GE-166
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Original |
GS864418/36E-250/225/200/166/150/133 165-Bump 133MHz x18/x36 8644xx BGA165 GS864436GE GS864436GE-166 | |
GS864418
Abstract: GS864418B GS864418B-250 GS864
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Original |
GS864418 /GS864436 /GS864472 209-Pin 133MHz 8644xx GS864418B GS864418B-250 GS864 |