GS 247 Search Results

staubli

Contextual Info: Advanced Contact Technology Powerline Industrie-Steckverbinder Industrial Connectors Geschirmter Steckverbinder Shielded connector 21BV-GS / 600A, 1000V 3C Advanced Contact Technology Geschirmter Steckverbinder 21BV-GS Shielded connector 21BV-GS Buchse KBT21BV-GS/300C.

CapXon gs

Abstract: CapXon CapXon series capxon vent gs CapXon series GS CapXon 820 capxon gs 1000 16 Capxon GR gs series capxon e101
Contextual Info: CapXon GS GR Series GS(GR) Series General Purpose 85℃ Features ◆ Wide CV value range. ◆ Load life 2000 hrs at 85℃. ◆ Safety vent construction design. ◆ For detail specifications, please refer to Engineering Bulletin No. E101 ◆ RoHS Compliant

16NA40FI

Abstract: A40FI SGS-THOMSON 435
Contextual Info: S GS-THOMSON !LiM iO gS STW16NA40 STH16NA40FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V dss RDS(on Id STW 16N A40 STH 16N A40FI 400 V 400V < 0.3 Q < 0.3 Q 16 A 10 A • TYPICAL RDS(on) =0.21 Q m AVALANCHE RUGGED TECHNOLOGY

ST*30NA50

Contextual Info: s = 7 S GS-TH O M S O N Ä 7 # K l »iLiM (s iO (gS STY30NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY30NA50 V dss R DS(on) Id 500 V < 0.175 Î2 30 A • TYPICAL Ftos(on) = 0 .1 5 ^ . EFFICIENT AND RELIABLE MOUNTING

f21a

Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101

DD108

Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101

Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101

C5690

Abstract: 6NA80FI STH6NA80FI 6NA80
Contextual Info: S GS-THOMSON !LiM@iO gS STW6NA80 STH6NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW NA80 STH 6N A80FI V dss RDS(on Id 800 V 800 V < 2 .4 Î2 < 2.4 Q 5.4 A 3.4 A . TYPICAL R d s (oh) =0.01 2 Q m AVALANCE RUGGED TECHNOLOGY

PG-SOT23

Abstract: BSS308PE L6327
Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 80 mΩ V GS=4.5 V 130 ID -2.1 • ESD protected A PG-SOT23 • Qualified according to AEC Q101

f21 diode sot23

Abstract: f21 diode marking YFs
Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 80 mΩ V GS=4.5 V 130 ID -2.1 • ESD protected A PG-SOT23 • Qualified according to AEC Q101

16N90

Contextual Info: IXFH16N90 IXFX16N90 HiPerFET Power MOSFETs V DSS I D25 D DS on N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family = 900 V = 16 A = 0.65 Q trr < 200 ns Prelim inary data Symbol V DSS v™ V GS v GS* Test Conditions T, = 25°C to 150°C T,J = 25°C to 150°C;’ RGS

Contextual Info: n ix Y S HiPerFET Power MOSFETs IXFX 44N60 V DSS ^D25 R DS on Single MOSFET Die 600V 44A 130 mil trr <250 ns Preliminary data sheet Maximum Ratings Symbol Test Conditions V V DOR T j =25°C to150°C T j = 2 5 °C to 1 5 0 °C ;R GS=1 MO 600 600 V V V GS

Contextual Info: METALLIZED POLYPROPYLENE + FILM-FOIL CAPACITORS # 6102 TYPE KPS 200-247 gs J L H B > 25 ød RM Dielectric: Polypropylene metallized + film-foil Self-extinguishing plastic housing / Epoxy resin sealing Paramèter Capacitance Tolérance Rated voltage Rated voltage

TSSOP-6

Contextual Info: SI6928PQ Vishay Siliconix Dual N-Channel 30-V D-S M O S F E T R d s(o n) (3 } 0.035 @ V GS = 10 V 0.050 Q V Gs = 4.5 V D2 o Di Q TSSOP-6 J i Top View Ô O Si S2 N-Channel M O SFET N-Channel M O SFET 2.5 C U N L E S S O T H E R W I S E N O T E D , PA RA M ETER

TRX10

Contextual Info: NUMBER TYPE GS-12-0984 Product Specification TITLE PAGE REVISION 1 of 16 TRX10GDL0610C3 SFP+ LRM Module AUTHORIZED BY J. Blank A DATE 27 Apr. 2011 CLASSIFICATION UNRESTRICTED Product Specification 10 GBd SFP+ 1310 nm LRM Linear Transceiver TRX10GDL0610C3

sfp reference design

Contextual Info: NUMBER TYPE GS-12-0974 Product Specification TITLE PAGE REVISION 1 of 16 B AUTHORIZED BY TRX10GDP0310C1 SFP+ LR Module DATE J. Blank 20 Mar. 2012 CLASSIFICATION UNRESTRICTED Product Specification 10 GBd SFP+ 1310 nm Limiting Transceiver TRX10GDP0310C1 Product Features:

Contextual Info: NUMBER TYPE GS-12-1108 Product Specification TITLE PAGE REVISION 1 of 22 1.4 AUTHORIZED BY TRX10GDP0311A1 SFP+ LR IT Module DATE A. Lehmann 25 Feb 2013 CLASSIFICATION UNRESTRICTED Product Specification 10 GBd SFP+ 1310 nm Industrial Temperature Module TRX10GDP0311A1

Contextual Info: NUMBER TYPE GS-12-1108 Product Specification TITLE PAGE REVISION 1 of 22 A AUTHORIZED BY TRX10GDP0311A1 SFP+ LR IT Module DATE A. Lehmann 25 Feb 2013 CLASSIFICATION UNRESTRICTED Product Specification 10 GBd SFP+ 1310 nm Industrial Temperature Module TRX10GDP0311A1

smps 48v 800w

Abstract: 48V SMPS 1000w 230 AC to 5V dc smps smps 1000W DC 12v to AC 220v 1000w 1000w DC 12v to AC 220v 230V INPUT TO 48V 10A OUTPUT SMPS smps 800W DC 12v to AC 220v 500w 1000W SMPS
Contextual Info: com.greegoo.www Greegoo Elextric Co.,Ltd. 2007 Switching Power Supplies Introduction Switching mode power supply 1- Enclosed type switching power supplies 15W Single Output Switching Power Supply Model Output GS-15. Input Feature • High efficiency, high reliability, lost cost

msi motherboard circuit diagram

Abstract: MOTHERBOARD msi CIRCUIT diagram MSI VGA MOTHERBOARD CIRCUIT diagram MOTHERBOARD msi CIRCUIT diagram of power switch circuit diagram of msi motherboard
Contextual Info: INTEGRATED CIRCUIT 5bE D • 4025750 0000222 T10 Integrated Circuit Systems, Inc. m i GS ICS2594 Product Preview Dual Programmable Graphics Clock Generator Highlights Features • • • • • • • Pin-Compatible With Industry Standard ICS2494 Dual Graphics Clock Generator

DUAL CHANNEL FM TRANSMITTER CIRCUIT DIAGRAM

Abstract: TDA2546A TDA3800 TDA3800G TDA3800GS Resistance r28
Contextual Info: TDA3800G JITDA3800GS STEREO/DUAL TV SOUND PROCESSING CIRCUITS G ENERAL DESCRIPTION The TDA3800G; GS are stereo/dual T V sound decoder circuits fo r processing an a.f. and a sound i.f. signal in T V and VCR equipment, using active filters in selective frequency processing.

Contextual Info: S P L D 803B 4 GS 160-ch SEG and 80-ch COM Driver OCT. 15, 2004 Version 1.0 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. is believed to be accurate and reliable. Information provided by SUNPLUS TECHNOLOGY CO.

D2061 transistor

Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
Contextual Info: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)

din 41332

Abstract: s4703 iec 384-4 ll 0007C si4ph X6936 monoethylenglykol S4710 GWA33240090096 Heatsink For stud devices - Semikron
Contextual Info: Index Selection guide Type Application Page A axial leaded 10 G high currents 15 GM high currents / small dimensions 23 GH high currents long - life type 30 GW highest currents 36 GS Design DIN terminals 40 LF high currents with soldering - lugs 45 MDK motor starting