GS 247 Search Results

staubli

Contextual Info: Advanced Contact Technology Powerline Industrie-Steckverbinder Industrial Connectors Geschirmter Steckverbinder Shielded connector 21BV-GS / 600A, 1000V 3C Advanced Contact Technology Geschirmter Steckverbinder 21BV-GS Shielded connector 21BV-GS Buchse KBT21BV-GS/300C.

CapXon gs

Abstract: CapXon CapXon series capxon vent gs CapXon series GS CapXon 820 capxon gs 1000 16 Capxon GR gs series capxon e101
Contextual Info: CapXon GS GR Series GS(GR) Series General Purpose 85℃ Features ◆ Wide CV value range. ◆ Load life 2000 hrs at 85℃. ◆ Safety vent construction design. ◆ For detail specifications, please refer to Engineering Bulletin No. E101 ◆ RoHS Compliant

DD108

Contextual Info: BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.1 A • ESD protected • Qualified according to AEC Q101

16N90

Contextual Info: IXFH16N90 IXFX16N90 HiPerFET Power MOSFETs V DSS I D25 D DS on N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family = 900 V = 16 A = 0.65 Q trr < 200 ns Prelim inary data Symbol V DSS v™ V GS v GS* Test Conditions T, = 25°C to 150°C T,J = 25°C to 150°C;’ RGS

Contextual Info: METALLIZED POLYPROPYLENE + FILM-FOIL CAPACITORS # 6102 TYPE KPS 200-247 gs J L H B > 25 ød RM Dielectric: Polypropylene metallized + film-foil Self-extinguishing plastic housing / Epoxy resin sealing Paramèter Capacitance Tolérance Rated voltage Rated voltage

TSSOP-6

Contextual Info: SI6928PQ Vishay Siliconix Dual N-Channel 30-V D-S M O S F E T R d s(o n) (3 } 0.035 @ V GS = 10 V 0.050 Q V Gs = 4.5 V D2 o Di Q TSSOP-6 J i Top View Ô O Si S2 N-Channel M O SFET N-Channel M O SFET 2.5 C U N L E S S O T H E R W I S E N O T E D , PA RA M ETER

M32x1

Abstract: 16BV-GS WKZ16BV-NS-A 240mm2
Contextual Info: Advanced Contact Technology Powerline Industrie-Steckverbinder Industrial Connectors sicher! r e m m Auf Nu ty first! Safe Geschirmter Steckverbinder Shielded connector 16BV-GS / 530A, 1000V 3B 1 Advanced Contact Technology MC Kontaktlamellentechnik: Grenzenlose Möglichkeiten

Contextual Info: NUMBER TYPE GS-12-1108 Product Specification TITLE PAGE REVISION 1 of 22 1.4 AUTHORIZED BY TRX10GDP0311A1 SFP+ LR IT Module DATE A. Lehmann 25 Feb 2013 CLASSIFICATION UNRESTRICTED Product Specification 10 GBd SFP+ 1310 nm Industrial Temperature Module TRX10GDP0311A1

msi motherboard circuit diagram

Abstract: MOTHERBOARD msi CIRCUIT diagram MSI VGA MOTHERBOARD CIRCUIT diagram MOTHERBOARD msi CIRCUIT diagram of power switch circuit diagram of msi motherboard
Contextual Info: INTEGRATED CIRCUIT 5bE D • 4025750 0000222 T10 Integrated Circuit Systems, Inc. m i GS ICS2594 Product Preview Dual Programmable Graphics Clock Generator Highlights Features • • • • • • • Pin-Compatible With Industry Standard ICS2494 Dual Graphics Clock Generator

DUAL CHANNEL FM TRANSMITTER CIRCUIT DIAGRAM

Abstract: TDA2546A TDA3800 TDA3800G TDA3800GS Resistance r28
Contextual Info: TDA3800G JITDA3800GS STEREO/DUAL TV SOUND PROCESSING CIRCUITS G ENERAL DESCRIPTION The TDA3800G; GS are stereo/dual T V sound decoder circuits fo r processing an a.f. and a sound i.f. signal in T V and VCR equipment, using active filters in selective frequency processing.

Contextual Info: S P L D 803B 4 GS 160-ch SEG and 80-ch COM Driver OCT. 15, 2004 Version 1.0 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. is believed to be accurate and reliable. Information provided by SUNPLUS TECHNOLOGY CO.

D2061 transistor

Abstract: B1ABCF000176 C1BA00000407 r2003 TRANSISTOR c5536 C1BB00000732 C2068 B0BC7R500001 B1BACD000018 B1AACF000064
Contextual Info: ORDER NO. MD0604120A3 DVD Stereo System SA-VK650GCP Colour S . Silver Type Please use this manual together with the service manual for Model No. [SA-VK650GC/GN/GS/GCS/GCT-S, Order No. MD0604118C3]. Specifications n SYSTEM SC-VK650(GCP) Notes: Music Center: SA-VK650 (GCP)

p031l

Abstract: MTGR-P05 MTPM-P13-1JK42 y514
Contextual Info: Section 13 Drives/Motors/Motion GS series and DURAPULSE AC Drives In this interactive PDF you can: • Use bookmarks to navigate by product category Soft Starters Section 14 • Use bookmarks to save, search, print or e-mail the catalog section • Click on part #s

INDUCTOR 70mH, 10A

Abstract: IRFP450LC N-Channel mosfet 400v to220
Contextual Info: International TOR Rectifier PD - 9.1231 IRFP450LC HEXFET Power MOSFET • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating m R q H i r r 'o H • • • Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated

15NA50

Contextual Info: ¿57 TYP E STH15NA50 STH15NA50FI STW 15NA50 S GS-THOMSON ¡[LiCTIiMOOS STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss RDS on Id 500 V 500 V 500 V < 0.4 a < 0.4 a < 0.4 Q. 14.6 A 9.3 A 14.6 A • TYPICAL RDS(on) = 0.33 Q.

Contextual Info: SGS-THOMSON [*^ i^©IÏÏEMD gS STI3220 MOTION ESTIMATION PROCESSOR ADVANCE DATA • PIXEL RATE FROM 0 UP TO 18MHz ■ BLOCK SIZE : 8 x 4n, 16 x 4n ■ MAXIMUM DISPLACEM ENT +7/-8 PIXELS HORIZONTAL AND VERTICAL ■ COMPUTATION OF THE MOTION VECTOR AND M INIMUM DISTORTION

Contextual Info: SPLD803B 4 GS 160-ch SEG and 80-ch COM Driver MAR. 07, 2005 Version 1.1 Sunplus Technology reserves the right to change this documentation without prior notice. Information provided by Sunplus Technology is believed to be accurate and reliable. However, Sunplus Technology makes no warranty for any errors which may appear in this document.

Contextual Info: ¿ 5 S GS-THOMSON ¡[LiCTIiMOOS 7 STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STH10NA50 STH10NA50FI STW 10NA50 dss 500 V 500 V 500 V R DS on Id < 0.8 a < 0.8 a < 0.8 a 9.6 A 5.6 A 9.6 A • TYPICAL RDS(on) = 0.7 Q.

TO-264-aa

Contextual Info: HiPerFET Power MOSFETs IXFK90N20Q IXFK90N20QS Q C lass ID25 = 200 V = 90 A R = D SS DS on Sym bol Test Conditions Maxim um Ratings V OSS Tj = 25°C to 150°C 200 V VDGR Tj = 25°C to 150°C; R GS = 1 MQ 200 V Vos V GSM Continuous ±20 V Transient ±30

Contextual Info: ¿57 TYP E S GS-THOMSON ¡[LiCTIiMOOS N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STH 12N A60 STH 12N A60FI STW 12N A60 STH12NA60/FI STW12NA60 dss 600 V 600 V 600 V R DS on Id < 0 .6 Q. < 0 .6 Q. < 0 .6 Q. 12 A 7 A 12 A . TYPICAL R DS(on) = 0.44 Q.

MSM82C55A-2GS-2K

Abstract: MSM82C55A2RS MSM82C55A-5 MSM82C55A
Contextual Info: O K I Semiconductor MSM82C55A-2RS/GS/VJS CMOS PROGRAMMABLE PERIPHERAL INTERFACE GENERAL D ESC R IPTIO N The MSM82C55A-2 is a program m able universal I /O interface device w hich opera tes as high speed and on low po w er consum ption d u e to 3n silicon gate CMOS technology. It is the best fit as an 1/

si9928

Abstract: 13S8
Contextual Info: T e m ic siiiconix_ SÌ9928DY Dual Enhancement-Mode MOSFETs N- and P-Channel Product Summary V Ds ( V ) N -C hannel 20 P-Channel -2 0 r DS(on) (Q ) I d (A) 0.05 (a) VGs = 4.5 V ± 5 .0 0.06 C«’ V GS = 3.0 V ± 4 .2 0.08 <S) V q s = 2.7 V

a1 gnb

Abstract: NTE8370 NTE8318 NTE852 ex-or NTE960 NTE8328 ET 1108 NTE8556 NTE8374
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE8318 8 -B it Priority Encoder 16-Lead DIP, See Diag. 249 sH 0 v cc sH Q GS 7Q 0 3 * B g ET 3 B3 QS A2CT c e B H R B lS a B B D A0 3 Q a Q Reg 1 D1 Reg 2. DO Q Reg 1 DO Reg 2 CP Q Q Reg 1 CP GND p g CP Comp

transistor a effet de champ

Abstract: BF247 transistor 139 BF signaux
Contextual Info: BF247 F IE L D E FFEC T T R A N S IS T O R , S IL IC O N , N C H A N N E L TRANSISTOR A E FFE T DE CHAMP, SILICIUM, CANAL N -Amplification Amplification -Chopper Découpeur V DS 25 V max. ' dss 30 . . . 25 0 mA à V QS = 0 in 3 groups e n 3 groupes 2 3 m A /V ty p à V GS = 0