GS 1,2 12 Search Results

Contextual Info: FU JI 2SK1939-01 e iL a iE ir u ô U É FAP-IIA Series N-channel MOS-FET 600V 8A 100W > Outline Drawing > Features - 1,2 a High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof

Contextual Info: _ Si3458DV VISHAY ▼ Vishay Siliconix New Product N-Channel 60-V D-S MOSFET PRODUCT SUMMARY r DS(on) (& ) I d (A ) 0 .1 0 @ V GS= 10 V ±3 .2 0.13 @ VGS = 4.5 V ±2 .8 V d s (V) 60 (1,2, 5, 6) D Q TSOP-6 Top View 1 6 2

Contextual Info: _SÌ3441PV Vishay Siliconix P-Channel 2.5-V G-S MOSFET •o(A) A 0 .1 0 @ V Gs = - 4 - 5 V 0.135 VGs = -2 .5 V (4) S O TSOP-6 Top View Œ Œ Œ 1 6 2 5 3 4 I] 33 33 Power Dissipation (3) G SÌ3441DV— 2.0 W Ô {1,2. 5, 6) D P-Channel M O SFET

Contextual Info: SEMIKRON INC 3bE D • Ûl3bb71 QDG2S11 3 M S E K G SEMIKRON Absolute Maximum Ratings Symbol Vos V dgr Id I dm V gs Pd T|,Tstg Visol humidity climate Values Units 500 500 9 36 ±20 125 - 5 5 . . . + 150 2 500 Class F 5 5 /1 5 0 /5 6 V V A A V W °C V 9 36

Contextual Info: s e m ik r o n SEMITRANS M Power MOSFET Modules 120 A, 200 V, 17 m fl Absolute Maximum Ratings Symbol Conditions 1 V ds V dgr Id R gs = 20 kQ Values 200 200 120 87 360 ±20 500 55 . . .+150 2 500 Class F 55/150/56 Tease = 25 °C Tease = 85 °C Idm V gs Pd

Contextual Info: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERE S P b Lead Pb -Free DRAIN SOUR CE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable

MOSFET 2301 SOT-23

Abstract: 2301 marking sot-23 WTC2301
Contextual Info: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V *Rugged and Reliable

BC264

Abstract: transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor
Contextual Info: BC 264 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EF FE T OE CHAMP, SILICIUM, CANAL N - LF amplification Amplification BF V DS 30 V max. ' dss 2 . . . . 12 mA à V GS = 0 in 4 groups en 4 groupes F 2 dB max à V q § = 0 f » 1 kHz Plastic case F 139 B — See outline drawing CB-76 on last pages

Contextual Info: MOSFET SMD Type P-Channel MOSFET KI2333CDS • Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● V DSS=-12V,ID=-5.1A 1 0.55 RD S O N =59mΩ(MAX) @ V GS =-1.8V,ID=-2A +0.1 1.3-0.1 +0.1 2.4-0.1 RD S(O N) =45mΩ(MAX) @ V GS =-4.5V,ID=-5.1A 0.4 3 ● RD S(O N) =35mΩ (MAX) @ V GS =-2.5V,ID=-4.5A

5R520P

Abstract: PG-TO-252-3-21 IPD50R520CP JESD22
Contextual Info: Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Package • Lowest figure of merit RON x Qg • Ultra low gate charge VDS @Tjmax 550 V RDS on ,max 0.520 Ω 13 nC Qg,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant

Contextual Info: 85 °C GS DIN series PCB solder pins RoHS compliant REACH compliant Features • • • • All internal contact welded High CV product High reliability Long useful life Different case sizes, voltages and capacitance combinations are available on request.

Contextual Info: VMMK-2503 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2503 is an easy-to-use broadband, high linearity amplifier in a miniaturized wafer level package WLP . The wide band and unconditionally stable performance makes this amplifier suitable as a gain block or a

Contextual Info: VMMK-2503 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2503 is an easy-to-use broadband, high linearity amplifier in a miniaturized wafer level package WLP . The wide band and unconditionally stable performance makes this amplifier suitable as a gain block or a

11823 die

Contextual Info: VMMK-2503 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2503 is an easy-to-use broadband, high linearity amplifier in a miniaturized wafer level package WLP . The wide band and unconditionally stable performance makes this amplifier suitable as a gain block or a

CK410B

Abstract: ICS932S421 CK509B CK410B datasheet PEC 816 932S509EKLF idt ck509b ICS9EX21801 932S421CGLF ICS932
Contextual Info: DATASHEET ICS9EX21801A 18 Output PCIe G2/QPI Differential Buffer with 2:1 input mux Description Features/Benefits The ICS9EX21801 provides 18 output clocks for PCIe Gen2 100MHz or QPI (133MHz) applications. The 9EX21801 has 4 selectable SMBus addresses, and dedicated CKPWRGD/PD#

Contextual Info: BC264A to D _ y \ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in ­ tended fo r hi-fi amplifiers and other audio-frequency equipment.

Contextual Info: BC264A to D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in­ tended for hi-fi amplifiers and other audio-frequency equipment.

TGA8061

Contextual Info: Texas Instruments TGA8061 Monolithic 100-MHz to 3.5-GHz Low-Noise Amplifier Features • 3-dB bandwidth exceeds 5 octaves ■ 2.4-dB noise figure with low input and output SWR ■ 18.0-dB gain ■ 15-dBm output power at 1-dB gain compression ■ Operates from single 12-volt supply

T2D 62 diode

Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
Contextual Info: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated

Contextual Info: ÇjpSupertex inc. vn4oi 2l N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d s <o n Order Number / Package ^G S lh ) (max) b v dgs (max) TO-39 TO-92 350V 15fi 1.8V — VN3515L 400V 12 fi 1.8V VN4012B VN4012L Features Advanced DMOS Technology

Contextual Info: VMMK-2503 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2503 is an easy-to-use broadband, high linearity amplifier in a miniaturized wafer level package WLP . The wide band and unconditionally stable performance makes this amplifier suitable as a gain block or a

Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 12 A Ω RDS on ≤ 360 mΩ ≤ 200 ns trr IXFC 22N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings

Contextual Info: Œ \ H A R R IS S E M I C O N D U C T O R CD4532BMS CMOS 8-Bit Priority Encoder D ecem ber 1992 Features • Pinout High Voltage Type 20V Rating • Converts From 1 of 8 to Binary CD4532BMS TOP VIEW • Provides Cascading Feature to Handle Any Number of

Contextual Info: öö» D • ÔSBSbOS 88D GG14ö7b 14876 D b « S IE G ~T~ 3 BUZ 201 SIEMENS AKTIENGESELLSCHAF-Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description C ase yD3 = 400 V /D = 12,5 A R„S(on = 0,4 i i