WTC2301 Search Results

WTC2301 Datasheets (1)

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Weitron

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
WTC2301		Weitron	P-Channel Enhancement Mode Power MOSFET	Original	PDF	484.45KB	6

WTC2301 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
WTC2301 Contextual Info: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.3 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ@V GS =-4.5V Rugged and Reliable	Original	wtc2301 ot-23 250ua 29-mar-10	PDF
MOSFET 2301 SOT-23 Abstract: 2301 marking sot-23 WTC2301 Contextual Info: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V Rugged and Reliable	Original	wtc2301 ot-23 12-may-05 mosfet 2301 sot-23 +12301 marking sot-23	PDF
Contextual Info: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERE S P b Lead Pb -Free DRAIN SOUR CE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V Rugged and Reliable	Original	wtc2301 ot-23 12-may-05	PDF
sot23 nc marking Abstract: WTC2301 Contextual Info: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.6 AMPERS * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <130mΩ@V GS =12V Rugged and Reliable	Original	wtc2301 ot-23 12-may-05 sot23 nc marking	PDF
WTC2301 Contextual Info: WTC2301 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -2.3 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -20 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ@V GS =-4.5V Rugged and Reliable	Original	wtc2301 ot-23 250ua 20-aug-09	PDF