GRM32NR72A104KA01L Search Results

SNVS629

Abstract: lm5050-1
Contextual Info: User's Guide SNVA458A – April 2011 – Revised May 2013 AN-2087 LM5050-1EVAL Evaluation Board 1 Introduction The LM5050-1 evaluation board is designed to demonstrate the capabilities of the LM5050-1 OR-ing Diode Controller. One high side N-channel power MOSFET is used. The LM5050-1 evaluation board

EI -40C

Contextual Info: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical

Contextual Info: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >240W  Advanced Heat Sink Technology  Single Circuit for 865MHz To

Contextual Info: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology

RFG1M20180

Abstract: ATC800B820JT
Contextual Info: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to

Contextual Info: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical

RFG1M20180SB

Abstract: j35 fet RFG1M20180SQ
Contextual Info: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to

Contextual Info: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz

Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical

ATC800A

Abstract: RF3931 ER35
Contextual Info: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features „ „ „ „ „ „ Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB

Contextual Info: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to

GRM55ER72A475KA01L

Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
Contextual Info: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance

Contextual Info: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium

Contextual Info: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed

Contextual Info: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier

Contextual Info: RFG1M20180 RFG1M20180 180W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

panasonic inverter dv 707 manual

Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594

amplifier 900mhz

Contextual Info: RF3931 30W GaN Wideband Power Amplifier Package: Hermetic 2-Pin Flanged Ceramic Features • Broadband Operation DC to 3.5GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology  Gain = 15dB at 2GHz  48V Operation Typical Performance at 900MHz

Contextual Info: RF3933 90W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical

Contextual Info: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium

Contextual Info: RFHA1042 125W GaN Power Amplifier 225MHz to 450MHz The RFHA1042 is optimized for military communications, commercial wireless infrastructure and general purpose applications in the 225MHz to 450MHz frequency band. Using an advanced 48V high power density gallium nitride GaN

Contextual Info: RFG1M20090 1.8GHz to 2.2GHz 90W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  Single Circuit for 1.9GHz to 2.2GHz  48V Operation Typical Performance

Contextual Info: RFG1M09180 RFG1M09180 180W GaN Power Amplifier 700MHz to 1000MHz The RFG1M09180 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 700MHz to 1000MHz frequency band, ideal for WCDMA and LTE applications. Using