GP1441 Search Results

GP1441

Contextual Info: polyfet rf devices GP1441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation

Contextual Info: polyfet rf devices GP1441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation

TB242

Abstract: 111X103KW500 RO4350B
Contextual Info: December 18, 2014 TB242 Frequency=1-3GHz Pout=10W Gain=10dB Vds=48Vdc Idq=50mA Efficiency avg. =35% GP1441 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com December 18, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount