GP 950 Search Results

NP-FM50

Abstract: NP-F330 gp digital camera universal li-ion charger SAA 7000 Casio np20 olympus 765 BP511 f601 canon ccd panasonic rx c50
Contextual Info: PRODUKTINFO Universalladdare digitalkamerabatterier Nyhet våren 2005! GP Digital Camera Universal Lithium Ion laddare är framtagen för 3,6V och 7,2V Lithium Ion batterier för digitalkameror från Canon, Casio, Fuji, GP, Kodak, Konica, Kyocera, Minolta, Nikon,

Contextual Info: MITSUBISHI ICs TV M51403FP/GP PAL VIDEO CHROMA SIGNAL PROCESSOR DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M51403FP/GP is a semiconductor integrated circuit for processing video signals in a PAL system color liquid crystal SECAM B-Y Input E SECAM R-Y Input E

UPC2726T

Abstract: UPC2726T-E3
Contextual Info: 1.6 GHz DIFFERENTIAL WIDEBAND SILICON RFIC AMPLIFIER UPC2726T NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES 20 • HIGH GAIN: 15 dB Typical at 400 MHz GP VCC = 5.0 V • WIDEBAND FREQUENCY RESPONSE: 1.6 GHz TYP Power Gain, GP dB 10 • SUPER SMALL PACKAGE

UPC2726T

Abstract: UPC2726T-E3
Contextual Info: PRELIMINARY DATA SHEET 1.6 GHz DIFFERENTIAL WIDEBAND SILICON MMIC AMPLIFIER UPC2726T NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES 20 VCC = 5.5 V 5.0 V 4.5 V 3.0 V Gp • WIDEBAND FREQUENCY RESPONSE: 1.6 GHz TYP • SINGLE POSITIVE DC SUPPLY Power Gain, Gp dB

M51404AFP

Abstract: circuit diagram of a simple tv lcd on off M51403FP
Contextual Info: MITSUBISHI ICs TV M51403FP/GP PAL VIDEO CHROMA SIGNAL PROCESSOR DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M51403FP/GP is a sem iconductor integrated circuit for processing video signals in a PAL system color liquid crystal [T O SE C A M B-Y Input (LC) television set.

Contextual Info: 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8182TB NOISE FIGURE, POWER GAIN vs. FREQUENCY • SUPPLY VOLTAGE: VCC = 2.7 to 3.3 V 24 • CIRCUIT CURRENT: ICC = 30 mA TYP at VCC = 3.0 V GP • POWER GAIN: GP = 21.5 dB TYP at f = 0.9 GHz

IN3492

Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90

RD06HVF1

Abstract: 100OHM RD06HVF1-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION DRAWING 1.3+/-0.4 9.1+/-0.7 FEATURES 12.3MIN High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

RD06HHF1-101

Abstract: mosfet HF amplifier RD06HHF1 RD 15 hf mitsubishi 10Turns RD06HHF
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 3.6+/-0.2 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

overcharge protection circuit diagram ni mh

Abstract: GP Batteries GP Ni-mh overdischarge protection circuit diagram ni mh GP Batteries NiMH 9v IEC61951-2 GP Batteries nimh backup use 1,2v Ni-MH battery overcharge protection circuit diagram pioneer circuit inc CONNECTOR 16 pin mitsumi pioneer
Contextual Info: 8/F., Gold Peak Building, 30 Kwai Wing Road, Kwai Chung, N.T., Hong Kong Tel : 852 2484 3333 Fax : (852) 2480 5912 E-mail address : gpii@goldpeak.com Website : www.gpbatteries.com.hk SALES AND MARKETING BRANCH OFFICES ASEAN GP BATTERY MARKETING (SINGAPORE) PTE. LIMITED

rd15hvf

Abstract: RD15HVF1 RD15HVF1-101 RD15HV rd15h 100OHM Zo-50o transistor d1 391 rd15hvf11 zg j9
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz

MAR 703 MOSFET TRANSISTOR

Abstract: RD15HVF1 RD15HVF1-101 MITSUBISHI RF POWER MOS FET D 1413 transistor micro strip line 100OHM rd15hvf11 rd15hvf transistor 1346
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz

MAR 618 transistor

Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

MAR 618 transistor

Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

Contextual Info: 23105 Kashiwa Court, Torrance, CA 90505 Phone: 800 579-4875 or (310) 534-1505 Fax: (310) 534-1424 E-mail: webmaster@ledtronics.com Website: http://www.ledtronics.com L200CWIR851 Infrared 5mm, Flanged Cylindrical, 8.6mm Height 16° viewing angle DWG BY: BL/ GP

GP 839 DIODE

Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.

RD06HHF1

Abstract: RD06HHF1-101 RD06HHF 10TURNS 40gp0
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

RD06HVF1

Abstract: Mitsubishi transistor rf final 100OHM RD06HVF1-101 transistor 6w FET P channel POWER MOSFET APPLICATION NOTE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

CB404

Abstract: cb-406 CB-407 CB-303
Contextual Info: 200. 950 MHz UHF puise power transistors transistors pour applications puisées UHF TYPE PACKAGE' CONFIG. THOMSONCSF pIIM Frequency range W (MHz) Tp/5 Gp min (<JB) b s / %) 400-450 200-500 10 10 7,5 10 10/10 1000/10 60/2 250/10 Vcc Pout (V) (VIO 30 200-500

RD 15 hf mitsubishi

Abstract: RD06HHF1-101 RD06HHF
Contextual Info: < Silicon RF Power MOS FET Discrete > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING RD06HHF1 is a MOS FET type transistor specifically 1.3+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

rd16hhf1

Abstract: RD16HHF1 application notes Rd16hhf
Contextual Info: < Silicon RF Power MOS FET Discrete > RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W OUTLINE DESCRIPTION 12.3MIN Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 2 9+/-0.4 High power gain: 3.6+/-0.2 4.8MAX FEATURES 3.2+/-0.4 designed for HF RF power amplifiers applications.

GP Powerbank

Abstract: GPPB510 Powerbank battery mtbf 950-Series 850mAh GP Batteries GPPb
Contextual Info: PRODUCT SPECIFICATION GP PowerBank M510 Model: GPPB510 Revision History Revision Date Initiator Reason for Change 00 1 March 2007 Natalie Chow New release Prepared By Natalie Chow Approved By Iris Lai Date: 1 Mar 07 Date: 1 Mar 07 GPI International Limited

a1277

Abstract: a968 a1684 B41822 b43822 A4108 A1567 A1474 a933 B41835
Contextual Info: Single Ended GP - Capacitors B 41821 Standard Series - 85°C B 43821 Construction Radial leads Charge-discharge proof, polar Aluminum case, insulating sleeve Minus pole marking on case surface Stand off rubber seal Features Miniaturized dimensions High CV product, i.e. Very compact

Common PCN Handset Specification Phase 2 v4.2

Abstract: sim 300s gsm modem datasheet Common PCN Handset Specification v4.2 sim 300 GSM MODEM AT commands GSM0408 NITZ Siemens MC75 str 630 GSM 07.07 siemens 230 96
Contextual Info: Wireless EDGE Modems MultiModem EDGE with Bluetooth Interface MTCBA-E-B MultiModem EDGE with Ethernet Interface (MTCBA-E-EN) MultiModem EDGE with GPS Functionality (MTCBA-E-GP) MultiModem EDGE (MTCBA-E) MultiModem EDGE with USB (MTCBA-E-U)