GOLDSTAR TECHNOLOGY INC Search Results

GD4007UB

Contextual Info: GOLDSTAR 4028757 TECHNOLOGY GOLDSTAR TECHNOLOGY INCi INC. DM e 04E D I 4Dsa?s? aoniLia a 01619 D T-H3 -Z5 GD4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER DESCRIPTION - The 4007UB is a Dual Complementary Pair and an Inverter w ith access to each device. It has three n-channel and three p-channel enhancement mode MOS transistors. For proper

76C256

Abstract: GM76C256 goldstar GM76C256L-85
Contextual Info: GOLDSTAR TECHNOLOGY INC/ 47E 4D2Ô7S7 D 0003502 GoldStar GST 4 T -y ê-2 3 -IZ GM76C256/L/LL 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76C256/L/LL is a 262,144 bit static ran­ dom access memory organized as 32,768 words by 8 bits using CMOS technology, and operated

GM76C256A

Contextual Info: GM76C256AL/ALL GoldStar GOLDSTAR ELECTRON CO, LTD. 32,768 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C256AL/ALL is a 262,144 bit static ran­ dom access memory organized as 32,768 words by 8 bits using CMOS technology, and operated

GM76C88L-15

Abstract: STATIC RAM 16x8 GM76C88L15
Contextual Info: GOLDSTAR TECHNOLOGY I N C / 47E D 405Ô7S7 D D0 35 73 3 I GST GoldStar GM76C88L 8,192 WORDS x 8 BIT CMOS STATIC RAM D escription The GM76C88L is 65,536 bit static random access memory organized as 8,192 words by 8 bits us­ ing CMOS technology and operated from a sin­

23C4000

Contextual Info: GOLDSTAR TECHNOLOGY INC/ 4?E D • 402075? 00035^0 ö ■ GoldStar GST T - V é '/3 ~ / 5 GM23C4000 524,288 WORDS x 8 BIT CMOS MASK ROM Description Pin Configuration The GM23C4000 high-performance Read Only Memory is organized as 524,288 words by eight bits and has an access time of 150/200ns. It is

Contextual Info: GOLDSTAR TECHNOLOGY INC/ M?E D 4QH6757 GoldStar 0Q0351S S «GST T - V 4 2 3 - / 7 GMM736256SG-70/80/10 262,144 WORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM736256SG is a 256K word x 36 Bits dy­ namic RAM Module which assembled 8 pieces of

Contextual Info: GOLDSTAR TECHNOLOGY INC/ 47E 402Ô757 D 0003517 4 •GST GoldStar GMM736512SG-70/80/10 524,288 WORDS x 36 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM736512SG is a 512K word x 36 Bits dy­ namic RAM Module which assembled 16 pieces of 256Kx4 bit DRAMs in 20/26 pin SOJ package

GM76C88AL

Contextual Info: GM76C88AL GoldStar GOLDSTAR ELECTRON CO, LTD. 8,192 WORDS x 8 BIT CMOS STATIC RAM Description The GM76C88AL is 65,536 bit static random acce­ ss memory organized as 8,192 words by 8 bits using CMOS technology and operated from a single 5V supply. Advanced Circuit techniques

Goldstar TV diagram

Abstract: 76c88
Contextual Info: « tv GM76C88AL GoldStar 8,192 WORDS x 8 BIT GOLDSTAR ELECTRON CO, LTD. CMOS STATIC RAM Description The GM76C88AL is 65,536 bit static random acce­ ss memory organized as 8,192 words by 8 bits using CMOS technology and operated from a single 5V supply. Advanced Circuit techniques

71C4400A

Contextual Info: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per­

Contextual Info: GOLDSTAR TECHNOLOGY INC/ M7E D l4G2fi7S7 0 0 0 3 4 ^ G « G S T GoldStar -2 3 - 1 3 GMM781000NS-60/70/80 1,048,576 WORDS X8 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM781000NS is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM71C4400AJ, 1M x4 sealed in 20 pin

GM76C256

Abstract: GoldStar GM76C256 goldstar
Contextual Info: GM76C256/L/LL GoldStar 32,768 W O R D S x 8 BIT GOLDSTAR ELECTRON CO., LTD. CMOS STATIC RAM Description Pin Configuration The GM 76C256/L/LL is a 262,144 bit static ran­ dom access memory organized as 32,768 words by 8 bits using CM OS technology, and operated

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

Contextual Info: GOLDSTAR TECHNOLOGY I N C / I GST 4D2A757 GGG3Mt11 1 47E D T-V6-Z3 -/5' GoldStar GMM781000S-60/70/80/10 1,048,576 WORDS X 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM781000S is 1M x 8 Dynamic RAM Mod­ ule organized as 1,048,576 x 8 bits and consists of

GMM791000S

Contextual Info: GOLDSTAR TECHNOLOGY INC/ 47E D GoldStar GST WÊ 40267S7 QD03S00 _r - y ^ - 2 3 " / g G M M 7 9 1 0 0 0 S - 6 0 /7 0 /8 0 /1 0 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM791000S is 1M x 9 Dynamic RAM Mod­ ule organized as 1,048,576 x 9 bits and consists of

Contextual Info: GOLDSTAR TECHNOLOGY I N C / 47E D • 4D2fl?S7 GoldStar 00035^4 □ GST T -W -/3 -/5 GM231000 131,072 WORDS x 8 BIT NMOS MASK ROM Pin Configuration D escription The GM231000 high-performance Read Only Memory is organized as 131,072 words by eight bits an access time of 200/250 ns. It is desgined

GL6981

Contextual Info: GOLDSTAR TECHNOLOGY INC/ E1E D • 40Sfl75? DOGSflTD T ■ - 2 1 2 1 - ^ 7 ^ 5 GL6981 LOW VOLTAGE SPEECH CIRCUIT Descriptions Pin Configurations The GL6981 is a bipolar integrated speech circuit for

Contextual Info: GOLDSTAR TECHNOLOGY IN C / 47E ]> • 402Ô7S7 GoldStar 1 «GST 0003433 TWé-23-/5 G M 7 1 C 4 1 0 0 A /A L 4,194,304 WORDSxl BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy­ namic RAM organized 4,194,304 x 1 Bit. GM71C4100A/AL has realized higher density, higher per­

Contextual Info: GM76C512/L/LL G oldStar 65,536 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. The GM76C512/L/LL is a 524,288 bits static random access memory organized as 65,536 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with

Goldstar Dynamic RAM 4M x

Abstract: GMM794000S70 GMM794000S-70
Contextual Info: GOLDSTAR TECHNOLOGY INC/ 47E ]> • MQ2fl7S7 D 0 0 3 S 2 2 ñ « G S T G oldStar T-V6-23-/S GMM794000S-60/70/80/10 4,194,304 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM794000S is 4M x 9 Dynamic RAM Modvile organized as 4,194,304 x 9 bits and consists of

Gm76c64

Contextual Info: PRODUCT SPECIFICATION iëËÀ GM76C64 GoldStar GOLD STAR CO., LTD. 65,536 x 1-Bit Static RAM Description Pin Configuration The GM76C64 is a 65,536-bit fully static asynchronous random access memory, organized as 6 5 ,5 3 6 words by 1-bit, using high-performance CMOS technology. The

transistor D401

Abstract: GS2013 GS2053 transistor TO220 GS2013 H GoldStar GS2052 GS2014 D401 GS2012
Contextual Info: COMMERCIAL TRANSISTOR GOLDSTAR TECHNOLOGY INC/ T3 DE j 4 0 2 Û 7 5 7 □ □ □ 0 0 1 4 ? | D T"“ ^ ¿>7 □ TO-220 TYPE MEDIUM POW ER TR FOR B/W,CTV,MONITOR & AUDIO/VIDEO EQUIPMENT • Medium Power TR PAKCAGE DEVICE APPLICATION MAXIMUM RATINGS AND VCBO VcEO VEBO

GMM791000NS60

Abstract: GMM791000ns-70 791000NS
Contextual Info: GOLDSTAR TECHNOLOGY INC/ 47E D 4DEÖ7S7 0003505 ö « G S T T-V¿-23-/* G old Star GMM791000NS-60/70/80 1,048,576 WORDS X9 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM791000NS is a 1M x 9 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM71C4400AJ, 1M x 4 sealed in 20 pin

Contextual Info: GOLDSTAR TECHNOLOGY I N C / 4020757 34E D 0003150 & W ËGST PRELIMINARY SPECIFICATION r h v .i GM76C256/L/LL 32,768x8 BIT STATIC RAM _HIGH PERFORMANCE D e s c r ip tio n Q - C o n fig u r a tio n P ii n The GM76C256/L7LL Is a 262,144 bit static random