GL15 Search Results

GL157

Contextual Info: CORPORATION GL157 Description ISSUED DATE :2005/07/15 REVISED DATE :2005/08/02B PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR The GL157 is designed for general purpose switching and amplifier applications. Features -60 Volt VCEO 3 Amp continuous current Low saturation voltage

Contextual Info: DATA SHEET GL1500~GL1508 IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIER VOLTAGE 50 to 800 Volts CURRENT Unit: inch mm GL 15 Amperes Recongnized File #E111753 FEATURES • Plastic Case With Heatsink For Heat Dissipation. 1.130(28.7) 1.118(28.4) • Surge Overload Ratings to 300 Amperes.

Tj175

Abstract: GL15 GL1500 GL25 GL3500 GL350
Contextual Info: GL1500, 2500, 3500 SERIES IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes GL FEATURES l Plastic Case With Heatsink For Heat Dissipation l Surge Overload Ratings to 400 Amperes l The plastic package has Underwriters

Bridge rectifiers

Abstract: GL1506A GL1508A
Contextual Info: GL1506A THRU GL1508A Glass Passivated Single In-Line Bridge Rectifiers Reverse voltage-600V to 800V Forward current-15Amperes FEATURES • • • • • • • • Glass passivated chip junction Thin single in-line package Ideal for printed circuit boards

Bridge rectifiers

Abstract: GL1506 GL1508
Contextual Info: GL1506 THRU GL1508 Glass Passivated Single In-Line Bridge Rectifiers Reverse voltage-600V to 800V Forward current-15Amperes FEATURES • • • • • • • • Glass passivated chip junction Thin single in-line package Ideal for printed circuit boards

GL1500

Abstract: GL15 GL25 GL2500 GL3500
Contextual Info: GL1500, 2500, 3500 SERIES IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES l Plastic Case With Heatsink For l Heat Dissipation Surge Overload Ratings to 400 l Amperes The plastic package has Underwriters

GL159

Contextual Info: CORPORATION GL159 Description ISSUED DATE :2005/07/19 REVISED DATE :2005/12/09C PNP SILICON PLANAR HIGH CURRENT TRANSISTOR The GL159 is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 15Amps peak current

GL1501A

Contextual Info: CORPORATION ISSUED DATE :2006/11/20 REVISED DATE : GL1501A NPN SI L I CO N PL AN AR MEDI UM PO W ER HI G H G AI N T RANSI ST O R Description The GL1501A is designed for general purpose switching and amplifier applications. Features 5 Amps continuous current, up to 10Amps pulse current

Bridge rectifiers

Abstract: GL1506B GL1508B
Contextual Info: GL1506B THRU GL1508B Glass Passivated Single In-Line Bridge Rectifiers Reverse voltage-600V to 800V Forward current-15Amperes FEATURES • • • • • • • • Glass passivated chip junction Thin single in-line package Ideal for printed circuit boards

GL158

Contextual Info: CORPORATION ISSUED DATE :2005/09/28 REVISED DATE :2005/12/09B GL158 Description NPN SILICON PLANAR HIGH CURRENT TRANSISTOR The GL158 is designed for general purpose switching and amplifier applications. Features 6 Amps continuous current, up to 20Amps peak current

GL156

Contextual Info: CORPORATION ISSUED DATE :2004/12/29 REVISED DATE :2005/08/02B GL156 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Description The GL156 is designed for general purpose switching and amplifier applications. Features 60 Volt VCEO 3 Amp continuous current Low saturation voltage

Contextual Info: DATA SHEET GL1500~GL1508 IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIER VOLTAGE 50 to 800 Volts CURRENT Unit: inch mm GL 15 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation. 1.130(28.7) 1.118(28.4) • Surge Overload Ratings to 300 Amperes.

UZ210

Abstract: P1275
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM27512ADI-20, TMM27512ADI-25 DESCRIPTION The TMM27512ADI is a 65,536 words * 8 bits ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TMM27512ADI's access time is 200ns/250ns, and the TMM27512ADI

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­

TC5716200D-150

Abstract: 5716200D
Contextual Info: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is

ES50N18LA2

Abstract: YTX14-BS YTZ10S MOTORCYCLE engine specifications yamaha mt-03 ES14AA2 PT12B YTZ14s GL1800 EXIDE GEL G 210
Contextual Info: 145372_CalCoastAdv 2/23/11 4:07 PM Page 1 145372_CalCoastAdv 2/23/11 4:07 PM Page 2 Sealed Maintenance Free Battery Features Sealed Post Prevents acid leakage, reduces corrosion, and extends battery life safety valve flame/arrestor relieves excess pressure

GL1553-45

Abstract: MIL-PRF-21038 MIL-T-10727
Contextual Info: MIL-temperature-range surface mount dual low profile MIL-PRF-21038 Interface Transformers -55o to +130o C These non-QPL interface transformers conform to all electrical and physical parameters of MIL-PRF-21038/27 and provide performance as required over -55o to +130o C. Built and tested

ericsson MD110 PBX manual

Abstract: ericsson bsc alarm codes ericsson bsc manual GL-12 project board MD110 PBX Ericsson Components cabinet ericsson md110 chicago dial indicator abb dcs book loop carrier 4000 paradyne
Contextual Info: AMIS Analog Networking 585-300-512 Comcode 108413543 Issue 7 May 1999 Copyright  1999, Lucent Technologies All Rights Reserved, Printed in U.S.A. Notice Every effort was made to ensure that the information in this book was complete and accurate at the time of printing. However, information is

TC57256AD-150

Contextual Info: 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY Id e s c r i p t i q n I The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TC57256AD's access time

SST-90

Abstract: APN-001522 NC254-SAC305 sst-90w65s SSR-90-WDLS-R11-GL150 APN001 star board
Contextual Info: PRODUCT DATA SHEET PhlatLight White LED Illumination Products SST-90 Series Features • Extremely high optical output: Over 2,250 lumens from a single chip white • Extremely high efficiency: Over 100 lumens per watt at 3.15A • High thermal conductivity package - junction to case thermal

IC SEM 2004

Abstract: ED-4701-304 AB-6201 failure rate TDDB JIS-C-7032 ED-4701-102 ED-4701-303 EIAJ AB-6201 Z81151981 HGSM
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . DIODES Diodes - Protect Against Transient Voltage Surge and ESD T VS and ESD Protection Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s

sot-23 L13

Abstract: gl05t-gs08 MARKING CODE L13
Contextual Info: GL05T to GL24T Vishay Semiconductors Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES • IEC 61000-4-5 lightning see IPPM below 3 • ESD-protection acc. IEC 61000-4-2 ± 8 kV contact discharge ± 15 kV air discharge • Small package for use in portable electronics

TC57258AD-15

Abstract: TC57256D TC57256AD-20
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC57256AD-15, TC57256AD-20 IDESCRIPTION] The TC57256AD is a 32,768 w o r d x 8 bit CMOS ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TC57256AD's access time is 150ns,and the TC57256AD operates from a single 5-volt power supply and has low power