GG31 Search Results

sab80188

Abstract: SAB 8086 80188 siemens EM 235 cn
Contextual Info: 47E » • SIEMENS B235b05 GG313b4 T « S I E G SIEMENS AKTIENGESELLSCHAF High-lntegration SAB 80188/80188-1 8-Bit Microprocessor Preliminary SAB 80188 8 MHz • Integrated feature set - enhanced SAB 8088-2 CPU - clock generator - 2 independent high-speed DMAchannels

transistor s07

Abstract: BSX93
Contextual Info: 30E » • 7^ 23? GG31D73 S ■ r Z 7 SGS-THOMSON ^ 7# B BSX93 i^ O T * S S G S-THOMSON HIGH-FREQUENCY SATURATED SWITCH DESCRIPTIO N T h e B S X 93 is a silicon planar epitaxial N P N tran­ sistor in Jedec T O -1 8 m etal case. It is designed specifically for high-speed saturated switching ap­

16L8-5

Abstract: PAL16R8
Contextual Info: ADV MICRO P L A / P L E / A R R A Y S 2ÔE D G25752fci GG311Gb b AMD2 CO M 'L: -5/4 T—46—19—13 Z f Advanced Micro Devices PAL16R8-5/4 Series 5 ns TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • 5 ns and 4.5 ns m axim um pro p a g a tio n delay

BTB13B

Contextual Info: 3ÜE T> m 7=52^237 GG31732 5 " P Z S ' 1 5 f Z 7 SGS-THOMSON ^ 7# • B T B 13 B 'Y ~ fiS -TH O M S O N TRIACS ■ GLASS PASSIVATED CHIP ■ HIGH CAPACITOR DISCHARGE CURRENT D ESCRIPTIO N Design primarly for applications such as phase control, static switching, power supply

TRANSISTOR ML6

Abstract: TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240
Contextual Info: Philip^emiconductor^^ • bb53T31 GG3177E E7T ■ A P X ^Productspeclflcatlon NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES h^Z » AUER PHILIPS/DISCRETE PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures

LT 7237

Contextual Info: 3QE D • 7^237 GG31bl2 b ■ _ £ÿj SGS-THOMSON HOMSON '" p Z S -li? BTA/BTB 06 C s G S-TH0MS0N TRIACS ■ GLASS PASSIVATED CHIP ■ EXCELLENT dv/dt c > 5 V/ns ■ Ig t SPECIFIED IN FOUR QUADFiANTS ■ AVAILABLE IN INSULATED VERSION -> BTA SERIES (INSULATING VOLTAGE

Contextual Info: 3PE D • 7 T 5 |:] 2 3 7 GG317ÖD S ■ f Z 7 SGS-THOMSON ^7# 'P Z S -O S DC 34/DC 38/DC 42 S G S-THOMSON TRIGGER DIODES A P P L IC A T IO N S Thyristors and triacs triggering. ADVANTAG ES High reliability glass passivation insuring parame­ ter stability and protection against junction conta­

C2575

Contextual Info: 3PE » • 7 ^ 5 CÏS 3 7 GG31?aü f Z 7 S C S -TH O M S O N ^ 7 # [fóflD ^@[lLi gTO©[jao©S S ■ T '-Z -S 'O S DC 34/DC 38/P C 42 S G S- THOMSÔN TRIGGER DIODES A P P L IC A T IO N S Thyristors and triacs triggering. ADVANTAG ES High reliability glass passivation insuring parame­

Contextual Info: D • A235bOS DDBlEEfl 1 M S I E G XX, , SIEMENS AKTIEN GE SEL LSCHAF T-52.-33-5S SAB 82289 Bus Arbiter for SAB 80286 Processors SAB 82289-6 up to 12 MHz SAB 82289 up to 16 MHz • S upports m u ltim aster system bus arbitration protocol • Synchronizes SAB 80286 processor w ith

Contextual Info: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212

mc 79L

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - B R O W N S E SDM862 SDM863 SDM872 SDM873 1 16 Single Ended/8 Differential Input 12-BIT DATA ACQUISITION SYSTEMS FEATURES • POWER PLANT MONITORING • COMPLETE 12-BIT DATA ACQUISITION SYSTEM IN A MINIATURE PACKAGE

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BU R R - BROW N I DAC7800 DAC7801 DAC7802 <t 1 Dual Monolithic CMOS 12-Bit Multiplying DIGITAL-TO-ANALOG CONVERTERS FEATURES APPLICATIONS • TWO D/As IN A 0.3" WIDE PACKAGE • • SINGLE +5V SUPPLY

Contextual Info: HB56H164EJ Serie 1,048,576-word x 64-bit High Density Dynamic RAM Modul HITACHI ADE-203-697A Z Rev. 1.0 Dec. 27, 1996 Description The HB56H164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

C350AVB

Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
Contextual Info: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices

Contextual Info: KM29N16000ERS ELECTRONICS Fl ash 2 M x 8 B i t NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit

5962-96887

Abstract: BU61582F2-140 BU61582F1-110 17A06 5962-9688701HXC DD310 BU-61582F2 QML-38534 BU-61582 50v transformer
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R344-97. 97-06-12 K. A. Cottonqim B Correct table II. 98-05-14 K. A. Cottonaim REV SHEET REV B B B B B B SHEET 15 16 17 18 19 20 REV STATUS OF SHEETS PMIC N/A STANDARD

Contextual Info: Preliminary Data Sheet September 1997 microelectronics group Lucent Technologies Bell Labs Innovations New Device Code LU3M38 Eight Ethernet MACs for 10/100 Mbits/s Frame Switching — Receive frame statistics are appended to each frame at the end of the DMA transfer for custom

BSX29

Abstract: MA2560
Contextual Info: 3DE » • 712*1237 003104^ £ÿj SCS-THOMSON S ■ —p . 3 7 -QO] _O O l i m i C T « ! _ B S X 2 9 S G S-TH0MS0N SWITCH AND RF AMPLIFIER DESCRIPTION The BSX29 is a silicon planar epitaxial P N P tran­ sistor in Jedec TO-18 metal case. It is designed for

KM23V4100C

Abstract: KM-23V4100CG
Contextual Info: KM23V4100C G/T ci cr*1 ELECTRONICS CMOS Mask ROM 4M-Bit (512K X 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 524,288 x 8 (byte mode) 262,144 x 16(word mode) • Supply voltage : 2.7V to 3.6V • Fast access time 3.0V Operation: 150ns(max.)

uPD42101

Abstract: PD42101 B7S2 uPD41101 analog signal delay UPD42102 UPD411 TSC 913 AS1135 mPD41
Contextual Info: E C ELECTRONICS INC NEC 3flE D NEC Electronics Ine. B t,MS7S2S 003 1427 5 M N E C E APPLICATION NOTE 55 yt/PD41101/yuPD41102 H IGH-SPEED LIN E B U F F E R S 5 Introduction Figure 1. The //PD411Q1 and ¿ PD41102 are high-speed serial access line buffers organized as 910 words x 8 bits and

Contextual Info: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 pm OR3C and 0.3 pm (OR3T) 4-level metal technology, (4- or 5-input

Contextual Info: Datasheet microelectronics group June 1999 Lucent Technologies Bell Labs Innovations ORCA Series 2 Field-Programmable Gate Arrays Features • High-performance, cost-effective, low-power 0.35 pm CMOS technology OR2CxxA , 0.3 pm CMOS technology (OR2TxxA), and 0.25 pm CMOS technology

82C206

Contextual Info: 47E D SIEMENS • flaasbos 0031S7D 1 « S I E G SIEMENS AKTIE NGE SELLSCHAF -rs a -3 S -5 5 SAB 82C211 CPU/Bus Controller of Siemens PC-AT Chipset Advance Information 117 3.90 47E » ■ Ö 535b05 0031571 SIEMENS AKTIENGESELLSCHAF -•

Contextual Info: 3GE D • 7^237 0D31DÔ1 1 ■ rz 7 sgs-thom son ^ 7 # bsyss o « [im i@ T M « § BSY56 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BSY55 and BSY56 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in high performance amplifier, oscillator