GG317 Search Results

BTB13B

Contextual Info: 3ÜE T> m 7=52^237 GG31732 5 " P Z S ' 1 5 f Z 7 SGS-THOMSON ^ 7# • B T B 13 B 'Y ~ fiS -TH O M S O N TRIACS ■ GLASS PASSIVATED CHIP ■ HIGH CAPACITOR DISCHARGE CURRENT D ESCRIPTIO N Design primarly for applications such as phase control, static switching, power supply

TRANSISTOR ML6

Abstract: TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240
Contextual Info: Philip^emiconductor^^ • bb53T31 GG3177E E7T ■ A P X ^Productspeclflcatlon NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES h^Z » AUER PHILIPS/DISCRETE PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures

Contextual Info: 3PE D • 7 T 5 |:] 2 3 7 GG317ÖD S ■ f Z 7 SGS-THOMSON ^7# 'P Z S -O S DC 34/DC 38/DC 42 S G S-THOMSON TRIGGER DIODES A P P L IC A T IO N S Thyristors and triacs triggering. ADVANTAG ES High reliability glass passivation insuring parame­ ter stability and protection against junction conta­

Contextual Info: HB56H164EJ Serie 1,048,576-word x 64-bit High Density Dynamic RAM Modul HITACHI ADE-203-697A Z Rev. 1.0 Dec. 27, 1996 Description The HB56H164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 pm OR3C and 0.3 pm (OR3T) 4-level metal technology, (4- or 5-input

Contextual Info: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699A Z Rev. 1.0 Dec. 27,1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1

BTB16-200BW

Abstract: triacs btb 15 700
Contextual Info: 30E r r z ^ D • DQ3174Ö ^ S G S - T H O M S O N 7# T * s - i s O W f ô m i C T « ! _ B T B 1 6 B W S G S-THOMSON SNUBBERLESS TRIACS ■ Itrms = 1 6 A a tT o = 90 °C. ■ V drm : 200 V to 800 V. ■ Igt = 50 mA QI-II-IIL . ■ GLASS PASSIVATED CHIP.

2 volt zener

Abstract: CA314Q REGULATOR IC 7915 CA3140S power supply in ic 7915 circuit diagram ano51 D2201 IC Generator to 10MHz triangle CS27a ca314 DE
Contextual Info: HA RR IS S E M I C O N D S E C T O R H a r r i 4QE ]> • 4302571 0031746 7 BIHAS T-K-IS s C A 3 1 4 0 A C A 3 1 4 0 BiMOS Operational Amplifiers with MOSFET Input/Bipolar Output August 19 9 1 Features Description • MOSFET input Stage The CA3140A and CA3140 are Integrated-circutt

a7710

Abstract: videoflow samsung image signal processor ARRAY MICROSYSTEMS QCIF samsung real-time decoding GG317 H.261 encoder chip
Contextual Info: KS0143 ICC ELECTRONICS DSP The KS0143 (ICC : Image Compression Coprocessor) integrated circuit is a very high performance programmable processor optimized for the execution of DCT-based image compression algorithms such as MPEG-1, JPEG, and H.261. In combination with commonly

REGULATOR IC 7915

Abstract: CA3160AS 7915, 15V regulator CA3130S 7915 circuit diagram GA3080
Contextual Info: HARRIS SEfllCOND SECTOR 4DE D 3 H a r r is • 43DS271 0D317ba 2 « H A S CA3160A CA3160 ' BiMOS Operational Amplifiers with MOSFET Input/CMOS Output A u gu st 1 9 9 1 Features Description • MOSFET Input Stage Provides: The CA3160A and CA3160 are Integrated circuit

Contextual Info: TOSHIBA TLCS-90 Series TMP90PH48 CMOS 8-B it Microcontrollers TMP90PH48F 1. Outline and Characteristics The TMP90PM48 is a system evalution LSI having a built in One-Time PROM for TMP90C848. A programming and verification for the internal PROM is achieved by using a general EPROM programmer with an

KM29V64001T

Abstract: v6400
Contextual Info: KM29 V 6 4 0 0 1 T Fl ash ELECTRONICS 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64001T/R is a 8M 8,388,608 x8 bit NAND Flash memory with a spare 256K(262,144)x8 bit. Its NAND cell provides the most cost-effective solution for

MC422000A36BH70

Abstract: uPD424400
Contextual Info: N E C ELECTRONICS INC 3 flE D B b M 2 7 SSS G Q 3 1 7 3 Û & H I N E C E MC-422000A36BH/FH 2,097,152 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. T 'M 'Z Z - n Description Pin Configuration The MC-422000A36BH/FH is a fast-page dynamic RAM module organized as 2,097,152 words by 36 bits and