GG2C Search Results

IRFP9140

Abstract: SJ 76 A DIODE
Contextual Info: P-CHANNEL POWER MOSFETS IRFP9140/9141 FEATURES • • • • • • • Lower R dsion Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area improved high temperature reliability

Contextual Info: SONY CXB1565R 622Mbps Clock & Data Recovery with High Sensitivity Limitting Amplifier Description The CXB1565R achieves 3R optical-fiber commu­ nication receiver functions Reshaping and Regenerating and Retiming on a single chip. This IC also equipped with the signal interruption alarm output, which is

Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET SF2N06L FEATURES TO-92L • L o w e r R d sio n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: Bulletin 125167/B International S Rectifier s th o s s e rie s PHASE CONTROL THYRISTORS Stud Version Features 110A • C e n te r g a te ■ H e rm e tic m e ta l c a s e with c e ra m ic in s u lato r A lso a v a ila b le w ith g la s s -m e ta l s e a l up to 1 2 0 0 V

BUV48B equivalent

Abstract: Buv48b transistor BUX 48C BUX48B Z60 transistor buv48c equivalent bux48c sum BUV48BFI BUV48C BUX48C
Contextual Info: _.J1._7121237 005^001 S G S -T H O M S O N 1 » ^ q 1 L [ E 1 « « S 0 • H ^ - 3 3>-\ S _ B U X 4 8 B /V 4 8 B /V 4 8 B F I B U X 4 8 C /V 4 8 C /V 4 8 C F 1 S G S-TH0MS0N 30E D HIGH VOLTAGE POWER SW ITCHING DESCRIPTION The BUX48B/C, BUV48B/C and BUV48BFI/CFI are

Contextual Info: GEC P L E S S E Y Si j a n u a r y i 997 PRELIMINARY INFORMATION S E M I C O N D U C T O R S D S3755 -3.4 SA868/9 FAMILY ENHANCED FUNCTIONALITY PULSE WIDTH MODULATION WAVEFORM GENERATOR The SA868/9 Domestic Appliance Motor Controller IC has been designed specifically for pulse width modulation PWM

Contextual Info: P D -9 .1 6 1 5 A International IÖR Rectifier FA38SA50LC HEXFET Power M O S F E T • Fully Isolated Package • Easy to Use and Parallel • Low On-Resistance • Dynamic dv/dt Rating • Fully Avalanche Rated • Simple Drive Requirements • Low Drain to Case Capacitance

Contextual Info: International IG R Rectifier pd-ms« IR F 2 8 0 7 S /L preliminary HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF2807S • Low-profile through-hole (IRF2807L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

Contextual Info: APPLICATION 2.1 I/O pins 2.1 I/O pins 2.1.1 I/O ports 1 I/O port write and read • The input-only ports and programmable I/O ports set for the input mode The input-only ports and the programmable I/O ports set for the input mode are floating. The value

Contextual Info: MITSUBISHI DIGITAL ASSP M 6 6 5 1 O P /F P LASER-DIODE DRIVER DESCRIPTION The M66510 is a semiconductor laser diode driver that drives a semiconductor laser of the type whose cathode and the anode of monitor photodiode are connected to the stem. Laser driving current of up to 120mA can be set by applying

Contextual Info: N E C ELECTRONICS INC 3DE D • J b427525 002=1052 7 ■ LIGHT EM ITTIN G D IO D E SE307-C G a A s IN F R A R E D E M IT T IN G D IO D E DESCRIPTION The SE307-C is a GaAs Gallium Arsenide Infrared Em itting Diode which is mounted on the lead frames and molded in

Contextual Info: MITSUBISHI LSIs M 5 M 4 1 8 1 2 5 A J - 5 , - 6 , - 7 , - 5 S , - 6 S , - 7 S HYPER PAGE MODE 1048576-BIT 131072-WQRD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 131072-word by 8 -bit dynamic RAMs, fabricated PIN CONFIGURATION ( TOP VIEW ) with a high performance C M O S process, and is ideal for largecapacity