GF IA G1 Search Results

GDE 4C

Abstract: CI -dp904c YLE relay
Contextual Info: 97/.07-0 `}/6cgfkycka <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHWXUKV Z Z Z Z Z Z ift JN@K:?@E> :8G89@C@KP {<8MP CF8; LG KF mbhff4t .vu :F@C K<ID@E8CJb @;<8C =FI ?<8MP ;LKP CF8; 58J? K@>?K 8E; ;LJK GKFK<:K<; KPG<J 8M8@C89C< vC8JJ y @EJLC8K@FE 8M8@C89C< jB4 ;@<C<:KI@: JKI<E>K?

HB 541

Contextual Info: 97/.07,0 <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHWXUKV W W W W W W jft IM?J9>?D= 97F78?B?JO {;7LO BE7: KF JE mhff3t -vu 9E?B J;HC?D7BIb ?:;7B <EH >;7LO :KJO BE7: 47I> J?=>J 7D: :KIJ FJEJ;9J;: JOF;I 7L7?B78B; vB7II y ?DIKB7J?ED 7L7?B78B; jA3 :?;B;9JH?9 IJH;D=J> `8;JM;D 9E?B 7D: 9EDJ79JIa

Contextual Info: Embedded Controller Features • PowerPC RISC CPU core and instruction set architecture • Pipelined CPU core runs at up to 4X the external bus clock rate • Separate instruction cache and write-back/ write-through data cache, both two-way setassociative

SIEMENS winch

Abstract: 81C90 siemens ppi C166 C167CR
Contextual Info: MICROCONTROLLERS Connecting the C166 architecture to ÌA E 6-1C&Qi'ÌSI LÙNtmtTTClr1- IJirgs jjw a * C o n t r o lle r a re a n e t w o r k s { C A N s iir e b e c o m in g in ­ m e n c ir c u ils m i s h o w jiv e f lu - s y . r u l i a l j l c I1 0 «

6KD8

Abstract: 5kd8 rs tube
Contextual Info: 5KD8 TIMO-SOL - s TRIO D E-PEN TO D E M IN IA T U R E T Y P E FOR .875 U SE AS A C O M B IN E D VH F O S C IL L A T O R A N D M IX E R 1.930 2.189 MAX MAX COATED U N IP O T E N T IA L C A T H O D E A N Y M O U N T IN G PO SIT IO N

6BA7

Abstract: 6ba7 tube tube 6BA7 id48 6SB7
Contextual Info: TENTATIVE DATA 6BA7 /- TUHG-SOL HEPTODE M IN IA T U R E 8 “1 TYPE UNI PO TEN T IA L CATHODE ‘MAX. HEATER P — 6 . 3 VO LTS MAX. T -6 | 3 0 0 MA. AC OR DC c e M AX. ANY MOUNTING P O S IT IO N G LA SS BULB SMALL 9 PIN BUTTON BASE THE 6 B A 7 IS A CATHODE TYPE H IG H G A IN P E N T A G R ID CO NVERTER IN THE SM A LL

ECL86

Abstract: pentode ecl86 triode push-pull circuit 1970 eCl8 Philips electronic tube handbook
Contextual Info: ECL86 T R IO D E-O U TP U T PENTODE Triode pentode with separate cathodes. The triode section is intended for use as A .F . am plifier. The pentode section is intended for use as A .F . power am plifier. QUICK REFERENCE DATA Triode section 1.2 mA 1 .6 mA/V

chn 840

Abstract: chn 809 ST cny 17 g3 CNY 817 CHN 841 CNY 417 626 T40 NOG CHN 628 CHN 849 845 bios chip
Contextual Info: MIL-M- 38 51 0/ 17 8A 30 April 1984 SUPERSEDING MI L- M- 38 51 0/ 17 8 28 June 1979 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, CMOS, M U L T I P L E XE RS /D EMU LT IP LE XE RS MO NO LI TH IC SILICON, POSITIVE LOGIC This specification is approved for use by all D e p a r t ­

hp 530 charging CIRCUIT diagram

Contextual Info: r r u r m TECHNOLOGY _ LTC1479 PowerPath C ontroller fo r Dual B attery Systems F€flTUft€S DCSCRICTIOn • Complete Power Path Management for Two Batteries, DC Power Source, Charger and Backup ■ Compatible with Li-Ion, NiCd, NiMH and Lead-Acid

Contextual Info: A S E M I R C H I L D Revised Novem ber 1998 I C G N D U C T D R tm 74F398 • 74F399 Quad 2-Port Register sion of the F398, with only th e Q outputs of the flip-flops available. General Description The F398 and F399 are th e logical equivalents of a quad 2input m ultiplexer feeding into fo u r edge-triggered flip-flops.

Contextual Info: IRF820 N - CHANNEL 500V - 2.5 Q - 2.5 A - TO-220 PowerMESH MOSFET TYPE IRF820 V dss Id R D S o n 500 V < 3 2.5 A Q Q. • TYPICAL Ros(on) = 2.5 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED

k554

Abstract: kiv 499 BUK554-200A BUK554-200B
Contextual Info: PHILIPS INTERNATIONAL bSE D m 7110fl2h D0b423b TTS « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

a20202

Abstract: 25p28 84 PIN CERAMIC QUAD FLAT PACK TEXAS INSTRUMENTS LA7292 325-pin 436-Pin ld25 cv ot 112 S20C40 ansi y32
Contextual Info: SMJ320C40 DIGITAL SIGNAL PROCESSOR SGUS017 - OCTOBER 1993 -55°C to 125°C Operating Temperature Range; Class B Processing Highest Performance Floating-Point DSP - 50-ns Instruction Cycle Time: 220 MOPS, 40 MFLOPS, 20 MIPS, 256 Mbytes/s - 60-ns Instruction Cycle Time:

3SK167

Abstract: transistor Bc 313 NF 28
Contextual Info: SANYO SEMICONDUCTOR 1SE CORP D I 7 cn ? 0 7 b 0 D D S 47 2 r-3 1- 3SK167 2046 G a A s Dual Gate M E S Silico n Field-Effect Transistor UHF Amp, Mixer Applications 1908A features . High power gain and small noise resistance . Small input/output capacitance, reverse transfer capacitance

ECH81

Abstract: ECH81 tube ech 81 tube ECH81 ech 81 philips ef 85 EBF80 amplificateur hf philips oszillator ks philips
Contextual Info: PHILIPS ECH81 TRIODE-HEPTODE f o r v a r io u s purposes i n P.M., FM/AM, A.M. and t e l e v i s i o n r e c e i v e r s TRIODE-HEPTODE pour a p p l i c a t i o n s d i v e r s e s dans des ré c e p ­ t e u r s F.M., F.M./A.M., A.M. e t de t é l é v i s i o n

Contextual Info: Æ T SGS-THOMSON D lsi S IILICTIs! iD©S VNP20N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP20N07 . . . . . . . . . . V clamp RDS(on) 11im 70 V 0 .0 5 a . 20 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP

Contextual Info: w a _EDI8F64128C ELECTRONIC DESIGNS INC j 1MByte Secondary Cache for Pentium Systems 128Kx64 Static RAM High Speed CMOS Cache Memory Module Features The EDI8F64128C is a high speed 1MByte secondary 1MByte Secondary Cache Module cache module which is ideal for use with many Intel Pentium

Contextual Info: Æ T SGS-THOMSON D lsi S IILICTIs! iD©S VNP7N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP7N04 . . . . . . . . . . V clamp 42 V R d S (o ii) 0 .14 a. 11im 7 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP

VNP10N07 equivalent

Contextual Info: Æ T SGS-THOMSON D lsi S IILICTIs! iD©S VNP10N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP10N07 . . . . . . . . . . V clamp 70 V RDS(on) 0.1 a. 11im 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP

Contextual Info: fZ J m rJM VNP35N07 VNP35N07FI S G S -T H O M S O N KfflOSIMDIIILiCTIMfflDIGI ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET A DV AN C E DATA TYPE Vclamp R d S o ii 11im VNP35N07/FI 70 V 0.028 n 35 A . . . . . . . . . . LINEAR C U RREN T LIMITATION

6V6GT

Abstract: tung-sol 6V6gt tube 6v6gt 6v6gt tube jcfr ZD75 5v6gt 6v6g
Contextual Info: TENTATIVE DATA 5V6GT TUN6-S0L -BEAM PENTODE COATED T-9 UN I P O T E N T I A L 2 f HEATER 4 .7 VOLTS AC ANY I 9" r CATHODE OR 0 .6 AMP. DC MOUNTING POSITION BOTTOM VIEW J 'a h I N T E R M E D IA T E SH ELL 7 P IN OCTAL MAX 7S GLASS BULB THE S V 6 G T I S A B EAM POWER A M P L I F I E R

Contextual Info: M M O T O R O L A Military 10521 4-Wide “OR-AND/OR-AND-INVERT” Gate ELECTRICALLY TESTED PER: 5962-8857701 M The 10521 is a basic building block providing the simultaneous OR-AND/ORAND-INVERT function, useful in data control and digital multiplexing applica­

equivalences para LF 13003 G

Abstract: SCR 131- 6 dj 201 13003 TO 126 13009 4098B 951 Monostable SH 13003 E 13009 E 13009 L 13003 TO 92 PACKAGE
Contextual Info: MI L-M-38510/175B 30 April 1984 SUPE&$ËDnr5 MI L-M-38510/175A 24 November 1980 MILITARY SPECIFICATION M I C R O C I R C U I T S , D I G I T A L , CMOS, P O S I T I V E L OGI C, F L I P - F L O P S AND MONOSTABLE MULTI VI BRATOR, MONOLITHIC S I L I C O N This s p e c i f i c a t i o n i s

G10597

Abstract: transistor tt 2170 7824 3A ifr 641 transistor Bd 945 KL 3383
Contextual Info: / I • A I ÏK INIE C ^r C o m p o u n d F ie ld E ffe c t P o w e r T r a n s is to r /1PA1500 B * N ^ ÿ ^ / \ ° 7 - M -f O S FET y ^ I lf f l H P A 1 5 0 0 B « , 4 VIEÜICDN51 -V * J H É M A ? - M O S F E T £ 4 E lS & rtlc L, £ A ? -M O S FET77 U - i T%