2222a
Abstract: 5ns turnon time npn transistors 2907 GES MPS2222A PN2222A 2221A 22a ic GES2221A GES2906 MPS2906
Contextual Info: E SOLI» STATE DI dF 3875081 G E SOLID STATE | 3Û75DÛ1 DDlT^bM □ 01E 17964 D Signal Transistors GES2906, 6A, 7, 7A, MPS2906, 6A, 7, 7A, GES2221A, 22A, MPS2222A, PN2222A Silicon Transistors Features: • Low leakage currents ■ High speed switching ■ Epoxy encapsulation with proved reliablity - excellent characteristic stability under
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ges2906mps2906ges2221amps2222a+6pn2222a2222a5ns turnon time npn transistors2907 ges2221a22a ic
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c 337 25
Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3
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c 337 25sc160dtic 2160 triacv130he150+6general electric scr c220es54494533 gem2n4401 2n3904 2222a1n21es5451
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GES5822
Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007
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ges5822ges5823ges5824ges5825+8ges5826ges5827ges5828ges600040mbient9es6003ges6001ges6002
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GES2222A
Abstract: NPN switching transistor 2N4403 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A G E Device b v CEO V C E sa t E Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300
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2n39032n39042n39052n3906+82n41232n41242n41252n41262n4400150mages2222anpn switching transistor 2n4403
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A9 npn
Abstract: GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 10 10 2 •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200
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2n39032n39042n39052n3906+72n41232n41242n41252n41262n4400a9 npnges93
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2N3903
Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) V c e (V) 10 10 Max. @ lc (m A ) 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200 200 200 200 200 350 350 350 350
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2n39032n39042n39052n3906+62n41232n41242n41252n41262n44002n4401
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2N4123 pnp silicon
Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50
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ges5819ges5820ges5821mpsa05+7mpsa06mpsa12mpsa13mpsa14mpsa202n4123 pnp silicon2n4401 520
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2n5226
Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2n39032n39042n39052n3906+72n41232n41242n41252n41262n4400225ent2n5226
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2N5223
Abstract: CEB npn GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E sa t E b v CEO Device T yp e @ 1 0 m A -(V ) Min. M ax. @ l c (m A ) V c e (V ) Max. @ lc (m A ) f-r -Typical l e (m A ) (M H z) 50 50 50 50 50 •BaBB 50 50 50 150 150 .4 .2 .2
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2n39032n39042n39052n3906+92n41232n41242n41252n41262n4400225age2n5223ceb npnges93
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2N3903
Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300
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2n39032n39042n39052n3906+72n41232n41242n41252n41262n4400225ma2n4401
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2N3901
Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006
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ges5822ges5823ges5824ges5825+8ges5826ges5827ges5828ges6000ges60iges60142n3901ges6001
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ERF 2030
Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @10mA V Min. 1 II • m fT Ccb @ 10V - Typical 1 MHz Continuous Max. @ lc (mA) (MHz) Typical (Pp) ImA) 'F E b v ceo Device V CE(sat) Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a
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ges5822ges5823ges5824ges5825+7ges5826ges5827ges5828ges6000-in4i48erf 2030ges6220
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BSW45A
Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A >= Manufacturer V(BR)CEO fr (V) (Hz) See Index Micro Elecs Semi Inc Advncd Semi
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bc212labcw862sb637k2sb710a+72sa8912sb621absw45alow-power silicon pnpp60n2sa1299ebc212bp
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2n4125 equivalent
Abstract: 2N3904 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 2N3903 2N3905 NPN+2n3904 2N4123
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24
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2n39032n39042n39052n3906+112n41232n41242n41252n41262n44002n4125 equivalent2n3905 equivalentjedec 2n39042n3904 rnh 2n3904npn+2n3904
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2n5220
Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2n4125 equivalent
Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2n39032n39042n39052n3906+102n41232n41242n41252n41262n44002n4125 equivalent2n5089 equivalent2n4123 equivalent2n3905 equivalentn4401
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S5822
Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO -92 PACKAGE Device 'F E bvceo Type @ 10m A V Min. 1I •I m VCE(sat) ! BBI MM m m m Mm SM M em m m ■ HBm Ë K w SSsm BBB Mi MB Max. @ lc (m A ) GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40
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ges5822ges5823ges5824ges5825+6ges5826ges5827ges5828ges6000s5822ges6001
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NPN switching transistor 2N4403
Abstract: NPN transistor 2n 3904 transistor 2N 3904 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24
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2n39032n39042n39052n3906+92n41232n41242n41252n41262n4400150manpn switching transistor 2n4403npn transistor 2n 3904transistor 2n 3904
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2N3906 JEDEC
Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 equivalent 2n3906 npn 2N3903 2N3904 2N3905 2N4123
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2n39032n39042n39052n3906+102n41232n41242n41252n41262n44002n3906 jedec2n3906 hie2n3905 equivalent2n3906 equivalent2n3906 npn
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GES5822
Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device 1 60 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007 GES6010 GES6011 GES6012 GES6013 GES6014
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ges5822ges5823ges5824ges5825+8ges5826ges5827ges5828ges600040lector-baseges6007ges6001ges6002
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BF441
Abstract: BF440 224AA G-T40N KT361 A5T3906 BFW90 LOW-POWER SILICON PNP 75n80 2N601
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2N3905 2N5382 BC126A BC126A BC126A BSX36 PH2907R SOR2907 (A) HSE402 MMBT4403 MMBT440~ 15 20 25 30 MMBT4403 A5T4403 2N4403 SF106 P2N2907 MPS6517 TMPT2907 TMPT4403 A5T3905 SF222 SF322 2N4143 B5W75
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2n39052n5382bc126absx36+14ph2907rsor2907hse402mmbt4403bf441bf440224aag-t40nkt361a5t3906bfw90low-power silicon pnp75n802n601
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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2n3904 409
Abstract: 2N4125 2N4126 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2n39032n39042n39052n3906+72n41232n41242n41252n41262n44002n4i262n3904 409
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2N5089 equivalent
Abstract: D39C4 GES5307 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device V C E sat E b v C EO Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300
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2n39032n39042n39052n3906+92n41232n41242n41252n41262n4400ges53052n5089 equivalentd39c4ges5307
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