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    GERMANIUM SCHOTTKY DIODE Search Results

    GERMANIUM SCHOTTKY DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS15S40
    		Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H Datasheet
    CUHS20F30
    		Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 30 V, 2 A, US2H Datasheet
    CUHS15S60
    		Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Datasheet
    CLS10F40
    		Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 40 V, 1 A, CL2E Datasheet
    CUHS20F60
    		Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Datasheet

    GERMANIUM SCHOTTKY DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BKC Semiconductors

    Abstract: BAT43 SMD D0213AA D0-213AA Germanium Schottky diode
    Contextual Info: DO-35 Glass Schottky Diode BAT43 Applications Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CD ROMs and hard disk drives.


    OCR Scan     		DO-35 BAT43 DO-213AA) 300pSecs OT-23 BAR43) D0-213AA 01g41 BKC Semiconductors BAT43 SMD D0213AA Germanium Schottky diode PDF

    BKC Semiconductors

    Abstract: DSAIH0002561
    Contextual Info: DO-35 Glass Schottky Diode BAT43 Applications Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CD ROMs and hard disk drives.


    OCR Scan     		DO-35 BAT43 DO-213AA) 300pSecs OT-23 BAR43) DO-213AA BKC Semiconductors DSAIH0002561 PDF

    BKC Semiconductors

    Abstract: Germanium DO-35 DIODE germanium diodes forward drop DSAIH0002561
    Contextual Info: Schottky Diode I BAT42 Applications DO-35 Glass Guard ring protected schottky barrier. Low forward drop.Excellent protection for M O S devices. Ideal replacem ent for germanium diodes, used in small fast mo­ tor applications such as CD ROMs and hard disc drives. Efficient portable sys­


    OCR Scan     		BAT42 DO-35 Length25 DO-213AA 681-039S BKC Semiconductors Germanium DO-35 DIODE germanium diodes forward drop DSAIH0002561 PDF

    Germanium DO-35 DIODE

    Abstract: Germanium Schottky diode 1N270 CDSH270 diode germanium 1n270 DIODE marking 16 schottky diode 1N270 germanium
    Contextual Info: CDSH270 SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDSH270 silicon Schottky diode is designed to replace the 1N270 Germanium diode. Some advantages over the 1N270 are lower forward voltage, lower leakage current, faster


    Original     		CDSH270 1N270 DO-35 100mA 200mA 16-August Germanium DO-35 DIODE Germanium Schottky diode diode germanium 1n270 DIODE marking 16 schottky diode 1N270 germanium PDF

    BKC Semiconductors

    Abstract: BAT46 smd
    Contextual Info: DO-35 Glass Schottky Diode BAT46 Applications Higher voltage and lower leakage. Low forward drop. More ESD protection. Ideal relacement for germanium diodes in instruments. Efficient portable systems battery isolator. Features DO-35 Glass Package Six Sigma quality


    OCR Scan     		DO-35 BAT46 002er' DO-213AA) 300pS DO-213AA BKC Semiconductors BAT46 smd PDF

    Germanium Power Devices

    Abstract: Germanium Power Diodes 430mv germanium Germanium power Germanium Power Devices Corp
    Contextual Info: GERMANIUM POWER DEVICES b3E J> m 3*147375 □□DGS'ìS ^42 • G P ß ermanium Power Devices Corp. Ge Schottky Rectifier T03 pkg 60mii pin High Reverse Energy/Ultra-Low VF GD60S20 May 1993


    OCR Scan     		GD60S20 310mv 260mv 230mv 360mv 300mv 27500ma 350ma 300ma 2000pf Germanium Power Devices Germanium Power Diodes 430mv germanium Germanium power Germanium Power Devices Corp PDF

    DSAIH00025313

    Contextual Info: DO-35 Glass Applications n Schottk» Diode BAT42 J Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CO ROMs and hard disk drives.


    OCR Scan     		DO-35 BAT42 DO-213AA) 300jjSecs DO-213AA 01g41 DSAIH00025313 PDF

    back Tunnel diode

    Abstract: metal detectors circuit "back diode" point contact diode tunnel diode application
    Contextual Info: D fU M iu 'H C General Infotmation RF detection is achieved through utilization of the nonlinear, current-voltage characteristics of a semiconducting junction. Two fundamental detector diode types are used; silicon-based, Schottky barrier and germanium-based, tunnel or back diodes.


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    Germanium Power Diodes

    Abstract: T-75 A HIGH VOLTAGE DIODES Germanium power 490mV Germanium Power Devices G40S20 430mv germanium
    Contextual Info: G Germanium Power Devices Corporation * Ge Schottky Rectifier D05 High Reverse Energy/Ultra-Low Vp G40S20 PRELIMINARY SPECIFICATIONS MAXIMUM RATINGS: IF avg Average forward current rectangular waveform 40 A IFM Peak rectified forward current 50%duty cycle


    OCR Scan     		G40S20 300usec 400mv 340mv 310mv 450mv 390mv 360mv 490mv 430mv Germanium Power Diodes T-75 A HIGH VOLTAGE DIODES Germanium power Germanium Power Devices G40S20 germanium PDF

    DSAIH0002561

    Abstract: BAT46 smd
    Contextual Info: DO-35 Glass Schottky Diode BAT46 Applications Higher voltage and lower leakage. Low forward drop. More ESD protection. Ideal relacement for germanium diodes in instruments. Features • • • • • • • • DO-35 Glass Package Six Sigma quality Humidity proof glass


    OCR Scan     		DO-35 BAT46 DO-213AA) 300pS 300pSecs DO-213AA DSAIH0002561 BAT46 smd PDF

    back Tunnel diode

    Abstract: Tunnel Diode tunnel diode application
    Contextual Info: Detector Overview General Inform ation RF detection is achieved through utilization o f th e nonlinear, current-voltage characteristics o f a semiconducting junction. Two fundamental d ete cto r diode types are used; silicon-based, Schottky barrie r and germanium-based, tunnel o r back diodes.


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    diode germanium 1n276

    Abstract: Germanium Schottky diode D0Q0330 DSAIH0002536
    Contextual Info: B K C INTERNATIONAL 1 1 7 ^ 0 3 D0Q0330 h 30E D O 3 .-O7 FEATURES • • • ♦ Solder plate DO-7 package Very low noise level Non-ESD sensitive >15 KV Gold Bonded Germanium Diode 1N276 o SPECIAL FEATURES & • Thirty years of proven reliability « Ideally suited for schottky diode replacement;


    OCR Scan     		D0Q0330 1N276 MIL-S-19500 300nS diode germanium 1n276 Germanium Schottky diode DSAIH0002536 PDF

    G60S15

    Abstract: G60S10 Germanium power
    Contextual Info: GERMANIUM POWER DEVICES 31E I • 3=147375 0000S48 S ■ E R M A N I U M PO W ER DEVICES CORP. Ge Schottky Rectifier High Reverse Energy/Ultra-Low Vp Preliminary Specifications DO-5 pkg Nov. ’90 Maximum Ratings: IF avg IFM IFSM VRWM T. JC IRRM Average Forward Current Rectangular W aveform . . 60 Amps


    OCR Scan     		0000S48 G60S15 G60S10 Germanium power PDF

    Germanium diode

    Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
    Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes


    OCR Scan     		1N34A 1N38A 1N60A 1N100A 1N270 1N276 1N277 1N456 1N459 1N456A Germanium diode 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode PDF

    Fast Recovery Diodes Cross Reference

    Abstract: Rectifiers High Efficient Rectifiers Fast Recovery Rectifiers cross reference zener diodes SCHOTTKY DIODES CROSS REFERENCE
    Contextual Info: MCC TABLE OF C O NTENTS I II) PART INDEX CASE STYLE REFERENCE GUIDE 3 16 HIGH SPEED SWITCHING DIODES 16 BRIDGE RECTIFIERS 17 HIGH EFFICIENT RECTIFIERS " 19 SUPERFAST RECOVERY RECTÏFÎËRS 20 FAST RECOVERY RECTIFIERS 23 STANDARD RECOVERY RECTIFIERS 24 SCHO TTKY REC TlFIERS


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    Germanium Power Devices

    Abstract: G30S20 germanium Germanium power
    Contextual Info: G E R M A N I U M PO WER D E V I C E S b3E D • 3=147375 O G O G S ^ ? 71S ■ 6 P » ES ermanium Power Devices Corp. Ge Schottky Rectifier D04 pkg High Reverse Energy/Ultra-Low Vp Type # G30S20 May 1993 MAXIMUM RATINGS: IF avg IFM IFSM VRWM R0jc Tj IRRM


    OCR Scan     		G30S20 300psec 310mv 350mv 1500pf 70nsec Germanium Power Devices G30S20 germanium Germanium power PDF

    Germanium Schottky diode

    Abstract: silicon diode and germanium ST Low Forward Voltage Schottky Diode 1N6263 Germanium Diodes Germanium DO-35 DIODE schottky diode ST Germanium power
    Contextual Info: Datasheet Central 1N6263 SILICON LOW CURRENT SCHOTTKY BARRIER DIODE Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-35 CASE Manufacturers of World Class Discrete Semiconductors D ESCRIPTION


    OCR Scan     		1N6263 DO-35 Germanium Schottky diode silicon diode and germanium ST Low Forward Voltage Schottky Diode 1N6263 Germanium Diodes Germanium DO-35 DIODE schottky diode ST Germanium power PDF

    Germanium Schottky diode

    Abstract: CDSH-4 Germanium DO-35 DIODE 30V 200mA schottky barrier diode
    Contextual Info: Data Sheet Central CDSH-2 CDSH-4 S em iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SILICON SCHOTTKY BARRIER DIODE Manufacturers of World Class Discrete Semiconductors JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CDSH Series types are Silicon Schottky Barrier Diodes designed for


    OCR Scan     		DO-35 200mA 200mA, Germanium Schottky diode CDSH-4 Germanium DO-35 DIODE 30V 200mA schottky barrier diode PDF

    diode germanium 1n270

    Abstract: Germanium DO-35 DIODE 1n270 Germanium Schottky diode 1950S 1N277 CDSH270 Switching diode 50V 200mA 1N270 diode diodes 1n270
    Contextual Info: V Datasheet fnV il l~Pf 1 W S llliiS I 1 Semiconductor Corp. CDSH270 SCHOTTKY DIODE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-35 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR CDSH270 is a Silicon Schottky diode specially designed to replace


    OCR Scan     		CDSH270 DO-35 CDSH270 1N270 1N277, 100mA 200mA diode germanium 1n270 Germanium DO-35 DIODE Germanium Schottky diode 1950S 1N277 Switching diode 50V 200mA 1N270 diode diodes 1n270 PDF

    Silicon Point Contact Diode

    Contextual Info: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard


    OCR Scan     		375GHz DC1596) OC1301) -10dB -20dB 35GHz 150pA. Silicon Point Contact Diode PDF

    diode 5082-2800

    Abstract: hp 5082-2800 diode Germanium Schottky diode handling of beam lead diodes 5082-2837
    Contextual Info: Whpl mi'tiM H E W LE T T PA C K A R D Beam Lead Schottky Diode Technical Data 5082-2837 Features • Fast Switching • High Breakdown • Beam Lead Equivalent of 5082-2800 • Platinum Tri-Metal System • Wide Temperature Range • SIOa Passivation Description


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    1N283

    Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases TYPE NO. CASE vrrm 10 VF IF trr V (HlA) (V) (mA) (ns) MAX MAX MAX TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 — GOLD BONDED 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT 1N87A


    OCR Scan     		1N34A 1N67A 1N87A 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 PDF

    1N295

    Abstract: diodes 1N34A 1N91 diode 1N34A DO-7 1N93 1N91 1N92 1n270 1N4502
    Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases DO-7 DO-1 TYPE NO. CASE TECHNOLOGY VRftM io VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT GOLD BONDED POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . 1N67A DO-7 90 50 1.0 5.0


    OCR Scan     		1N34A 1N67A 1N87A 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 diodes 1N34A 1N91 diode DO-7 1N93 1N91 1N92 1N4502 PDF

    Germanium Schottky diode

    Abstract: germanium rectifier diode diode arrays
    Contextual Info: M^E D INTERNATIONAL SEMICOND • =5000370 OOOOOlfi ÔEb U I Z E n DIODE ARRAYS COST REDUCTION MINIATURIZATION APPLICATIO NS Com puter Peripherals Instrumentation Office Equipm ent A utom otive A u d io /V id e o Control Boards Home Appliances Power Supplies


    OCR Scan     		1N4148, 1N4150, Germanium Schottky diode germanium rectifier diode diode arrays PDF