GERMANIUM MIXER DIODES Search Results

BAV46

Abstract: bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAT10 BAW96 BAV71 BAT50R
Contextual Info: Microwave solid state mixer diodes M axim um Operating Frequency GHz Type No. book 1 part 8 Typical Noise Figure (dB) Typical Impedance 8.5 750 O perating Temperature Z if Drawing i'e fe re n c e O u tlin e <oc> (Í2) GERMANIUM POINT CONTACT 40 AAY34 - 5 5 t o +100

germanium rectifier diode

Abstract: Germanium rectifier CV710 germanium diode CV7109 microwave mixer diode CV7108 Germanium Amplifier noise diode Germanium Mixer Diodes
Contextual Info: GERMANIUM MICROWAVE MIXER DIODE GEM3 GEM4 C oaxial point contact germ anium diodes intended fo r u se in pretuned c en tim e tric low n o is e m ix e r c ir c u its u p to l2 G c /s . The sp re a d of adm ittance fig u re s at 12G e/s is v e ry sm a ll. GEM3 and 4 a re the com m ercial

Microwave Mixer Diodes

Abstract: dc/tx/1/2/1257/AAY56 AAY56 mullard germanium Germanium Mixer Diodes CV7772 germanium rectifier magnetron magnetron S BAND Mullard
Contextual Info: GERMANIUM MICROWAVE MIXER DIODES AAY56 AAY56R T E N T A T IV E D A T A C oaxial point contact germ anium diodes intended fo r u se in p re -tu n e d c e n trim e tric low n o ise m ix e r c irc u its u p to 4 G H z . The sp re a d of adm it­ tan c e fig u re s at 4GHz is v e ry s m a ll. AAY56 andA A Y 56R are the co m m e rc ial

GaAs tunnel diode

Abstract: Germanium Schottky diode tunnel diode GaAs SMGS11 germanium diode germanium diodes Microwave detector diodes SMS202
Contextual Info: FOR IMMEDIATE RELEASE: January 11, 2010 CONTACT: Jim Godbout Aeroflex / Metelics VP Sales and Marketing 408-328-3321 James.godbout@aeroflex.com Teresa Farris Aeroflex / Metelics MARCOM Manager 719-594-8035 Teresa.farris@aeroflex.com PLASTIC SMT SCHOTTKY MIXER/DETECTOR DIODES

backward diode

Abstract: tunnel diode General Electric "backward diode"
Contextual Info: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a

AAY50

Abstract: AAY50R K1007 Germanium diode Mullard
Contextual Info: M ICROW AVE M IXER DIODES AAY50 AAY50R TENTATIVE DATA Coaxial germanium point-contact diodes for u se in pre-tuned X-band low noise m ixer c irc u its. The AAY50 and AAY50R a re intended as low noise re tro fits at X-band frequencies for coaxial m ixer diodes, types SIM2/5,

GaAs tunnel diode

Abstract: Gallium Arsenide tunnel diode high power pin diode METELICS DETECTOR DIODE germanium diode Germanium Power Diodes tunnel diode GaAs msat-p25 Press Fit Diode Metelics
Contextual Info: FOR IMMEDIATE RELEASE: December 1, 2009 CONTACT: Jim Godbout Aeroflex / Metelics VP Sales and Marketing 408-328-3321 James.godbout@aeroflex.com Teresa Farris Aeroflex / Metelics MARCOM Manager 719-594-8035 Teresa.farris@aeroflex.com NEW PLASTIC SURFACE MOUNT SWITCH AND ATTENUATOR DIODES

BGT24MTR12

Abstract: 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC
Contextual Info: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.

Silicon Point Contact Diode

Contextual Info: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard

U1001

Abstract: pHEMT transistor MTBF 84-1LMI XU1001 U100-1 U-10-01 77598
Contextual Info: 36.0-40.0 GHz GaAs MMIC Up-Converter U1001 July 2001 - Rev 7/27/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 4.0 dB Typical Small Signal Gain 35 dB Typical LO/RF Isolation Low DC Power Consumption Operates at +3.0 VDC 2.90 mm X 2.50 mm Die Size

transistor R1001

Abstract: R1001 84-1LMI XR1001
Contextual Info: 36.0-40.0 GHz GaAs MMIC Receiver R1001 August 2001 - Rev 8/01/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 5.0 dB Typical Small Signal Conversion Gain 4.0 dB Typical Noise Figure 12.0 dB Typical Image Rejection 2.90 mm X 2.50 mm Die Size 100% On-Wafer RF and DC Testing

r1003 transistor

Abstract: TRANSISTOR R1003 r1003 XR1003 84-1LMI pHEMT transistor MTBF R100-3
Contextual Info: 20.0-32.0 GHz GaAs MMIC Receiver R1003 October 2001 - Rev 10/05/01 Features Chip Device Layout 20.0-32.0 GHz Frequency Range 17.0 dB Typical Conversion Gain 3.0 dB Typical Noise Figure 22.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883

DM6030HK

Abstract: TS3332LD XP1005 XU1004
Contextual Info: 32.0-45.0 GHz GaAs MMIC Transmitter U1004 August 2006 - Rev 02-Aug-06 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +14.0 dBm Output Third Order Intercept OIP3 +4.0 dBm LO Drive Level 5.0 dB Conversion Gain 100% On-Wafer RF and DC Testing

R1006 transistor

Abstract: transistor R1006 BPF 1608
Contextual Info: 18.0-25.0 GHz GaAs MMIC Receiver R1006 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

Contextual Info: 32.0-45.0 GHz GaAs MMIC Transmitter U1004 August 2006 - Rev 02-Aug-06 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +14.0 dBm Output Third Order Intercept OIP3 +4.0 dBm LO Drive Level 5.0 dB Conversion Gain 100% On-Wafer RF and DC Testing

id1160

Contextual Info: 32.0-45.0 GHz GaAs MMIC Transmitter U1004-BD June 2007 - Rev 28-Jun-07 Features Chip Device Layout Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +14.0 dBm Output Third Order Intercept OIP3 +4.0 dBm LO Drive Level 5.0 dB Conversion Gain

DM6030HK

Abstract: TS3332LD XP1005-BD XU1004 XU1004-BD XU1004-BD-000V XU1004-BD-EV1
Contextual Info: 32.0-45.0 GHz GaAs MMIC Transmitter U1004-BD October 2008 - Rev 16-Oct-08 Features Chip Device Layout Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +14.0 dBm Output Third Order Intercept OIP3 +4.0 dBm LO Drive Level 5.0 dB Conversion Gain

R1006 transistor

Abstract: transistor R1006 r1006 R1006 diode 84-1LMI XR1006
Contextual Info: 18.0-25.0 GHz GaAs MMIC Receiver R1006 May 2005 - Rev 13-May-05 Features Chip Device Layout Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 15.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

Contextual Info: 21.2-23.6 GHz GaAs MMIC Receiver March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.5 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

U1003

Contextual Info: 19.0-26.0 GHz GaAs MMIC Transmitter U1003 June 2005 - Rev 21-Jun-05 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 100% On-Wafer RF and DC Testing

84-1LMI

Abstract: XB1004 XP1013 XU1003
Contextual Info: 19.0-26.0 GHz GaAs MMIC Transmitter U1003 June 2005 - Rev 21-Jun-05 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 100% On-Wafer RF and DC Testing

inductance R600

Contextual Info: 21.2-23.6 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection

Contextual Info: 30.0-46.0 GHz GaAs MMIC Receiver R1004 August 2006 - Rev 01-Aug-06 Features Sub-harmonic Receiver Integrated LNA, LO Doubler/Buffer, Image Reject Mixer +4.0 dBm Input Third Order Intercept IIP3 +2.0 dBm LO Drive Level 9.0 dB Conversion Gain 3.5 dB Noise Figure

transistor r1004

Abstract: R1004 transistor R1004 DM6030HK TS3332LD XR1004
Contextual Info: 30.0-46.0 GHz GaAs MMIC Receiver R1004 August 2006 - Rev 01-Aug-06 Features Sub-harmonic Receiver Integrated LNA, LO Doubler/Buffer, Image Reject Mixer +4.0 dBm Input Third Order Intercept IIP3 +2.0 dBm LO Drive Level 9.0 dB Conversion Gain 3.5 dB Noise Figure