GENERAL SEMICONDUCTOR MARKING UJ SMA Search Results

Contextual Info: Central CMPT2907A Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

FGAF40N60UFTU

Contextual Info: FGAF40N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is

FGA40N60UFD

Abstract: FGA40N60
Contextual Info: FGA40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is

Contextual Info: FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching

voltage detection induction cooker

Abstract: induction cooker mechanical design
Contextual Info: FGA50S110P 1100 V, 50 A Shorted-anode IGBT Features General Description • Intrinsic Anti-parallel Diode for Soft-switching Applications Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications.

Contextual Info: FGA25S125P Shorted AnodeTM IGBT Features General Description • High soeed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability . This

Contextual Info: FGAF20N60SMD 600 V, 20 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low

Contextual Info: FGAF20N60SMD 600 V, 20 A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low

400v 20A ultra fast recovery diode

Contextual Info: FGAF20N60SMD 600V, 20A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Solar Inverter, UPS, Welder and SMPS applications where low conduction and switching losses are essential.

Contextual Info: FGB7N60UNDF 600 V, 7 A Short Circuit Rated IGBT Features Applications • Short Circuit Rated 10 us • Sewing Machine, CNC, Home Appliances, Motor Control • High Current Capability General Description • High Input Impedance • Fast Switching Using advanced NPT IGBT technology, Fairchild’s the NPT

fgb7n60u

Abstract: 12v fan motor marking I58
Contextual Info: FGB7N60UNDF tm 600V, 7A Short Circuit Rated IGBT Applications • Home appliance inverter-driven appplication - Fan Motor Driver, Circulation Pump, Refrigerator, Dish Washer Features • Short circuit rated 10us • High current capability General Description

7A 400v diode

Contextual Info: FGB7N60UNDF tm 600V, 7A Short Circuit Rated IGBT Applications • Home appliance inverter-driven appplication - Fan Motor Driver, Circulation Pump, Refrigerator, Dish Washer Features • Short circuit rated 10us • High current capability General Description

Contextual Info: FGAF40N60UF 600 V PT IGBT General Description Features Fairchild's UF series of IGBTs provide low conduction and switching losses. The UF series is designed for applications such as general inverters and PFC where high speed switching is a required feature.

Contextual Info: SGH40N60UF 600 V PT IGBT General Description Features Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where high speed switching is required feature. • High Speed Switching

Contextual Info: FGA30N65SMD 650 V, 30 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low

Contextual Info: SGP10N60RUFD 600 V, 10 A Short Circuit Rated IGBT General Description Features Fairchild’s RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

Contextual Info: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)

GENERAL SEMICONDUCTOR MARKING uj sma

Abstract: GENERAL SEMICONDUCTOR MARKING UD Device Marking Code UB UD UG UJ UK UM
Contextual Info: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t ol V d e e d n ang e t R Ex 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)

GENERAL SEMICONDUCTOR MARKING UJ SMA

Abstract: vishay MARKING UM SMA Device Marking Code UB UD UG UJ UK UM us1j diode us1m vishay GENERAL SEMICONDUCTOR MARKING UD GENERAL SEMICONDUCTOR us1j marking UD JESD22-B102D J-STD-002B
Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • •

Contextual Info: T O SH IB A TA4000F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4000F V H F-U H F WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band Width • Low Noise • Small Package 700MHz Min. 4dB (Typ.) PIN ASSIGNMENT (TOP VIEW) @3dB down @f = 400MHz

2SC3326

Contextual Info: TOSHIBA 2SC3326 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3326 Unit in mm FOR MUTING AND SWITCHING APPLICATIONS + 0.5 High Emitter-BaseVoltage : Ve b O ~ 25V (Min.) High Reverse hjrg : Reverse hjrg = 150 (Typ.) (VCE= —2V, IC = —4mA)

Contextual Info: FSB50550U Smart Power Module SPM Features General Description • 500V RDS(on)=1.4Ω(max) 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications FSB50550U is a tiny smart power module (SPM®) based on

Contextual Info: central" Semiconductor Corp. C M P T2222A NPN SILICON TRANSISTOR DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

FSB50325

Contextual Info: FSB50325S Smart Power Module SPM Features General Description • 250V 1.5A 3-phase FRFET inverter including high voltage integrated circuit (HVIC) FSB50325S is a tiny smart power module (SPM) based on FRFET technology as a compact inverter solution for small