GENERAL SEMICONDUCTOR MARKING UJ SMA Search Results

Contextual Info: Central CMPT2907A Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose

Contextual Info: FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching

voltage detection induction cooker

Abstract: induction cooker mechanical design
Contextual Info: FGA50S110P 1100 V, 50 A Shorted-anode IGBT Features General Description • Intrinsic Anti-parallel Diode for Soft-switching Applications Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications.

Contextual Info: FGAF20N60SMD 600 V, 20 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ = 175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low

Contextual Info: FGAF40N60UF 600 V PT IGBT General Description Features Fairchild's UF series of IGBTs provide low conduction and switching losses. The UF series is designed for applications such as general inverters and PFC where high speed switching is a required feature.

Contextual Info: SGH40N60UF 600 V PT IGBT General Description Features Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where high speed switching is required feature. • High Speed Switching

Contextual Info: FGA30N65SMD 650 V, 30 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low

Contextual Info: SGP10N60RUFD 600 V, 10 A Short Circuit Rated IGBT General Description Features Fairchild’s RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

Contextual Info: FSB50550U Smart Power Module SPM Features General Description • 500V RDS(on)=1.4Ω(max) 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications FSB50550U is a tiny smart power module (SPM®) based on

FSB50325

Contextual Info: FSB50325S Smart Power Module SPM Features General Description • 250V 1.5A 3-phase FRFET inverter including high voltage integrated circuit (HVIC) FSB50325S is a tiny smart power module (SPM) based on FRFET technology as a compact inverter solution for small

Contextual Info: FSB50450 Smart Power Module SPM Features General Description • 500V 3.0A 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications FSB50450 is a tiny smart power module (SPM®) based on

FSB50325

Contextual Info: FSB50325T Smart Power Module SPM Features General Description • 250V 3.0A 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications FSB50325T is a tiny smart power module (SPM®) based on

15-V

Abstract: FSB50450S
Contextual Info: FSB50450S Smart Power Module SPM Features General Description • 500V 3.0A 3-phase FRFET inverter including high voltage integrated circuit (HVIC) FSB50450S is a tiny smart power module (SPM) based on FRFET technology as a compact inverter solution for small

Contextual Info: FSB50250 Smart Power Module SPM Features General Description • 500V 2.0A 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications FSB50250 is a tiny smart power module (SPM®) based on

Contextual Info: FSB50250US Smart Power Module SPM Features General Description • 500V RDS(on)=4.2Ω(max) 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications FSB50250US is a tiny smart power module (SPM®) based on

marking code H.5 Sot 23-5

Abstract: Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47
Contextual Info: t v . • i1',!ï î .1l II^I[I:î ¡ e i w O A ln i“ ' ¡1 à f;] m Semiconductor, Inc. TC47 Series VOLTAGE REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION ■ ■ The TC47 Series are CMOS voltage regulator controller ICs for use with an external power transistor. They feature

Contextual Info: FSB50325S Smart Power Module SPM Features General Description • 250V 1.5A 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications FSB50325S is a tiny smart power module (SPM®) based on

Contextual Info: FSB50550US Smart Power Module SPM Features General Description • 500V RDS(on)=1.4Ω(max) 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications FSB50550US is a tiny smart power module (SPM®) based on

Contextual Info: FSB52006S Smart Power Module SPM Features General Description • 60V, RDS(ON).MAX=80mΩ @ 25°C 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications FSB52006S is a tiny smart power module (SPM) based on

Contextual Info: FSB50450US Smart Power Module SPM Features General Description • 500V RDS(on)=2.4Ω(max) 3-phase FRFET inverter including high voltage integrated circuit (HVIC) • 3 divided negative dc-link terminals for inverter current sensing applications FSB50450US is a tiny smart power module (SPM®) based on

Contextual Info: FGA15S125P 1250 V, 15 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications.

Contextual Info: TOSHIBA 2SA1255 2 S A 1 255 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • + 0.5 2.5-0.3 High Voltage : V c b o = —200V (Min.) VCEO= —200V (Min.) Small Package Complementary to 2SC3138 •

120N30

Contextual Info: FGPF120N30 300V, 120A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where

Contextual Info: FGPF30N45T tm 450V, 30A PDP Trench IGBT Features General Description • High Current Capability • Low saturation voltage: VCE sat =1.55V @ IC = 30A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.