GENERAL SEMICONDUCTOR MARKING SM Search Results

GENERAL SEMICONDUCTOR MARKING SJ SMA

Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

2n2222

Abstract: 2n2222 npn 2n2221 2N2221-2N2222 npn 2n2222 transistor 2n2222 npn transistor general purpose 2n2222 npn switching transistor power transistor 2n2222 2N2222 hfe
Contextual Info: 2N2221 2N2222 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221, 2N2222 types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

2N4036

Abstract: 2n4037 2N40* Central
Contextual Info: 2N4036 2N4037 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar PNP Silicon Transistors designed for small signal, medium power, general purpose industrial applications. MARKING: FULL PART NUMBER

CW-75

Abstract: 2N2222A marking code 2N2222A marking
Contextual Info: 2N2221A 2N2222A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

2N4410

Abstract: 2N4410 Transistor Transistor marking code S
Contextual Info: 2N4410 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4410 is a small signal NPN silicon transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

smd code marking HD

Abstract: schottky 400v SMD Marking Code 10A MARKING CODE VF Smd marking code SMD MARKING CODE 50A GENERAL SEMICONDUCTOR MARKING smc 10A Schottky bridge marking code N CMSH1-100M
Contextual Info: Discrete Semiconductor Sample Kit SMD Rectifier Central Semiconductor Sample Kits provide designers with the discrete semiconductor devices ideally suited for the latest design challenges. The SMD Rectifier Sample Kit includes a variety of medium power devices suitable for general purpose full-wave,

CMR3-06

Abstract: C302 C304 C306 c306 diode C310 CMR3-02 CMR3-04 CMR3-10 TR13
Contextual Info: Central CMR3-02 CMR3-04 CMR3-06 CMR3-10 TM Semiconductor Corp. GENERAL PURPOSE RECTIFIER 3.0 AMP, 200 THRU 1000 VOLTS SMC CASE FEATURES: • LOW COST • SPECIAL SELECTIONS AVAILABLE • HIGH RELIABILITY • SUPERIOR LOT TO LOT CONSISTENCY • GLASS PASSIVATED CHIP

TRANSISTOR SMD MARKING CODE

Abstract: 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE
Contextual Info: Discrete Semiconductor Sample Kit Low Power SMD Central Semiconductor Sample Kits provide designers with the discrete semiconductors ideally suited for the latest design challenges. The Low Power SMD Sample Kit includes a variety of diodes and MOSFETs suitable for general purpose

JESD 201 class 1A

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes Diodes - TO-277A SMPC Package for Smartphone Chargers V10PN50 and V15PN50 50 V TMBS Rectifiers for Smartphone Chargers Feature Industry-Low VF of 10 A and 15 A KEY BENEFITS • High current density

CMLT8099

Contextual Info: Central CMLT8099 SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099 consists of two individual, isolated 8099 NPN silicon transistors, manufactured by the epitaxial planar process and epoxy

Contextual Info: 1N485B 1N485B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg

MARKING as SOD123

Abstract: 1N4148W SOD123 D1 1N4148W SOD123 D3
Contextual Info: SEMICONDUCTOR 400mW SOD-123 SURFACE MOUNT Green Product Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation Value Units

Contextual Info: SEMICONDUCTOR 400mW SOD-123 SURFACE MOUNT Green Product Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation Value Units

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . AND TEC I INNOVAT O L OGY SMC3K Series N HN Diodes O 19 62-2012 Diodes - TransZorb Bi-Directional TVS Surface-Mount Bi-Directional Transient Voltage Suppressors Feature High Surge Capability to 3 kW in SMC DO-214AB Package

marking 1af

Abstract: marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW
Contextual Info: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)

HN1A01FU

Contextual Info: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (Dual type) l High voltage and high current : VCEO =−50V, IC =−150mA (max) l High hFE: hFE = 120~400

Contextual Info: 2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1618 Audio Frequency General Purpose Amplifier Applications • Unit: mm Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE: hFE = 120~400

Contextual Info: 2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1873 Audio Frequency General Purpose Amplifier Applications • Unit: mm Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE •

HN1C01FU

Contextual Info: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity

HN1C01F

Contextual Info: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity

HN1A01FU

Contextual Info: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO =−50V, IC =−150mA (max) High hFE: hFE = 120~400

HN1A01F

Contextual Info: HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01F Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = −50V, IC = −150mA (max) High hFE: hFE = 120~400

HN2C01FU

Contextual Info: HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FU Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400