GENERAL SEMICONDUCTOR DIODES Search Results
GENERAL SEMICONDUCTOR DIODES Datasheets Context Search
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BPW50
Abstract: tda1000 BD232 PHILIPS SEMICONDUCTOR cqy17 Germanium Diode aa112 GaAs tunnel diode BD232 BPW50-9 74LS00A DIODE BZW70
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PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: BPW50 tda1000 BD232 PHILIPS SEMICONDUCTOR cqy17 Germanium Diode aa112 GaAs tunnel diode BD232 BPW50-9 74LS00A DIODE BZW70 | |
1N5404Contextual Info: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC |
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1N5400 1N5408 DO-201AD 2002/95/EC 2002/96/EC DO-201AD, UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 1N5404 | |
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Contextual Info: SMZJ3788B thru SMZJ3809B www.vishay.com Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor |
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SMZJ3788B SMZJ3809B J-STD-020, AEC-Q101 DO-214AA 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
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Contextual Info: SMZJ3788 thru SMZJ3809B www.vishay.com Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor |
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SMZJ3788 SMZJ3809B J-STD-020, DO-214AA 2002/95/EC 2002/96/EC DO-214AA 2011/65/EU 2002/95/EC. | |
TPSMA*AContextual Info: TPSMA6.8 thru TPSMA43A Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology |
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TPSMA43A DO-214AC J-STD-020, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TPSMA*A | |
marking 3Bp
Abstract: marking 3Bk 3bv 3bx
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3KASMC10 3KASMC43A J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214AB 11-Mar-11 marking 3Bp marking 3Bk 3bv 3bx | |
3BZ marking
Abstract: marking 3bw marking 3Bk 3bs marking code 3KASMC24
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3KASMC10 3KASMC43A DO-214AB J-STD-020, AEC-Q101 18-Jul-08 3BZ marking marking 3bw marking 3Bk 3bs marking code 3KASMC24 | |
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Contextual Info: B330LA, B340A www.vishay.com Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency |
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B330LA, B340A J-STD-020, DO-214AC AEC-Q101 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
1N4947GP-E3/23Contextual Info: 1N4942GP thru 1N4948GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency ed* |
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1N4942GP 1N4948GP DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 1N4947GP-E3/23 | |
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Contextual Info: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop |
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EGP30A EGP30G 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 | |
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Contextual Info: SSC53L, SSC54 www.vishay.com Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency |
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SSC53L, SSC54 J-STD-020, DO-214AB AEC-Q101 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
BY252PContextual Info: BY251P thru BY255P Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in |
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BY251P BY255P 22-B106 2002/95/EC 2002/96/EC DO-201AD AEC-Q101 DO-201AD, 2011/65/EU 2002/95/EC. BY252P | |
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Contextual Info: P300A thru P300M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in |
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P300A P300M 22-B106 2002/95/EC 2002/96/EC DO-201AD AEC-Q101 DO-201AD, 2011/65/EU 2002/95/EC. | |
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Contextual Info: B350B, B360B www.vishay.com Vishay General Semiconductor Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop |
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B350B, B360B J-STD-020, DO-214AA 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: TGL41-6.8A thru TGL41-200A www.vishay.com Vishay General Semiconductor TRANSZorb Transient Voltage Suppressors FEATURES • Plastic MELF package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional polarity only |
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TGL41-6 TGL41-200A J-STD-020, DO-213AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
MBR60Contextual Info: New Product MBR60100CT Vishay General Semiconductor Dual Common-Cathode High Voltage Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-220AB • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability |
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MBR60100CT O-220AB 2002/95/EC 2002/96/EC O-220AB 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 MBR60 | |
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Contextual Info: MURS320 www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability |
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MURS320 J-STD-020, DO-214AB AEC-Q101 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
BFM LF
Abstract: SMCJ12A vishay vishay smcj GENERAL SEMICONDUCTOR MARKING bfm SMCJ5.0A
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SMCJ188CA DO-214AB J-STD-020, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 BFM LF SMCJ12A vishay vishay smcj GENERAL SEMICONDUCTOR MARKING bfm SMCJ5.0A | |
BYG10JContextual Info: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability |
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BYG10D BYG10Y DO-214AC J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 BYG10J | |
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Contextual Info: 1N5615GP thru 1N5623GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for High Reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current |
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1N5615GP 1N5623GP MIL-S-19500 DO-204AC DO-15) 2002/95/EC 2002/96/EC 08-Apr-05 | |
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Contextual Info: New Product B350A, B360A Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficifieency • High surge capability |
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B350A, B360A J-STD-020, 2002/95/EC 2002/96/EC DO-214AC DO-21trademarks 2011/65/EU 2002/95/EC. | |
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Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time |
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BYG23M J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214AC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
marking code VE DO-214AC
Abstract: vishay smaj5.0
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SMAJ188CA J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214AC 2011/65/EU 2002/95/EC. 2011/65/EU. marking code VE DO-214AC vishay smaj5.0 | |
PB3510
Abstract: PB35
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PB3506 PB3510 E312394 22-B106 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. PB3510 PB35 | |