GENERAL SEMICONDUCTOR DIODE MARKING ME Search Results
GENERAL SEMICONDUCTOR DIODE MARKING ME Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GRM022R61C104ME05L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM033D70J224ME01D | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM155R61H334KE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM2195C2A273JE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRMJN65C1H104GE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
GENERAL SEMICONDUCTOR DIODE MARKING ME Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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DF10S
Abstract: df08s DF06S DF01S JESD22-B102 J-STD-002 DF005S DF06SE3 Diode df01s
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DF005S DF10S E54214 J-STD-020, 2002/95/EC 2002/96/EC DF10S df08s DF06S DF01S JESD22-B102 J-STD-002 DF06SE3 Diode df01s | |
FCD5N60Contextual Info: SuperFET TM FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and |
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FCD5N60 FCU5N60 FCU5N60 FCU5N60TU | |
37n60
Abstract: 7n60 fairchild fairchild 7n60 FCU7N60TU FCD7N60
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FCD7N60/FCU7N60 FCD7N60 FCU7N60 FCU7N60 FCU7N60TU 37n60 7n60 fairchild fairchild 7n60 | |
682 SOT23 MARKINGContextual Info: ON Semiconductort Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio |
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MMBV105GLT1 236AB) MMBV105GLT1/D 682 SOT23 MARKING | |
DF04S
Abstract: DF06S DATASHEET DF01S DF06S DF02S diode BY 399 DF10S JESD22-B102D J-STD-002B
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DF005S DF10S E54214 J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 DF04S DF06S DATASHEET DF01S DF06S DF02S diode BY 399 DF10S JESD22-B102D J-STD-002B | |
Contextual Info: ON Semiconductort MMBV409LT1 Silicon Tuning Diode ON Semiconductor Preferred Device These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies |
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MMBV409LT1 236AB) | |
DFA08S
Abstract: DFA10S DF06SAE3 DF06SA DFA04S DFA02S DF005SA DF08S DF08SA DF10SA
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DF005SA DF10SA E54214 J-STD-020C, 2002/95/EC 2002/96/EC 1000ed 08-Apr-05 DFA08S DFA10S DF06SAE3 DF06SA DFA04S DFA02S DF08S DF08SA DF10SA | |
Diode 1Contextual Info: ON Semiconductort MMBV3102LT1 Silicon Tuning Diode ON Semiconductor Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. |
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MMBV3102LT1 236AB) Diode 1 | |
DF005S
Abstract: DF01S
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DF005S DF10S E54214 J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 DF01S | |
KE5 diode
Abstract: diode marking kk4 surface mount marking bg vr 1
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MMBZ5221B-G MMBZ5259B-G 350mW OT-23 OT-23, MIL-STD-202, KE5 diode diode marking kk4 surface mount marking bg vr 1 | |
T 4512 H diode
Abstract: ps 4512 diode diode T 4512 H 1N5551US 1N5550 1N5550US 1N5551 1N5552 1N5554 1N5554US
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OCR Scan |
MIL-S-19500/4200 MIL-S-19500/420C 1N5550 1N5554, 1N5550US 1N5554US MIL-S-19500. JANHCC1N5551 JANKCA1N5551 1N5552 T 4512 H diode ps 4512 diode diode T 4512 H 1N5551US 1N5551 1N5552 1N5554 | |
DFA10S
Abstract: DF06SA-E3 DFA08S DFA02S DF005SA
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DF005SA DF10SA E54214 J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 DFA10S DF06SA-E3 DFA08S DFA02S | |
DFA08S
Abstract: DFA10S DF02SA DFA04S DF08S DF005SA DF10SA DFA005S JESD22-B102 J-STD-002
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DF005SA DF10SA E54214 J-STD-020, 2002/95/EC 2002/96/EC 18-Jul-08 DFA08S DFA10S DF02SA DFA04S DF08S DF10SA DFA005S JESD22-B102 J-STD-002 | |
lite-on 1N4148W
Abstract: MARKING CODE diode sod123 t4 DIODE T4 marking diode marking 355 sod 123 t4 marking marking code t4 1N4148W LITEON MARKING as SOD123 diode MARKING CODE T4 diode marking T4 sod123
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1N4148W OD-123 OD-123 J-STD-020D 2002/95/EC OD-323 OD-523 lite-on 1N4148W MARKING CODE diode sod123 t4 DIODE T4 marking diode marking 355 sod 123 t4 marking marking code t4 1N4148W LITEON MARKING as SOD123 diode MARKING CODE T4 diode marking T4 sod123 | |
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Contextual Info: SuperFET II FCP600N60Z / FCPF600N60Z 600V N-Channel MOSFET Description Features ® SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower |
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FCP600N60Z FCPF600N60Z FCPF600N60Z | |
FCPF400N60Contextual Info: SuperFET II FCPF400N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower |
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FCPF400N60 FCPF400N60 | |
FCD600N60ZContextual Info: SuperFET II FCD600N60Z 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower |
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FCD600N60Z FCD600N60Z | |
Contextual Info: SuperFET II FCD900N60Z 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower |
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FCD900N60Z FCD900N60Z | |
Contextual Info: SuperFET II FCD900N60Z 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower |
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FCD900N60Z FCD900N60Z | |
Contextual Info: SuperFET II FCP380N60 / FCPF380N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower |
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FCP380N60 FCPF380N60 FCPF380N60 | |
KJ-3Contextual Info: MMBZ5221B - MMBZ5259B SENSITRON SEMICONDUCTOR 350mW SURFACE MOUNT ZENER DIODE Data Sheet 2675, Rev. - Features • · · · Planar Die Construction 350mW Power Dissipation on FR-4 PCB General Purpose, Medium Current A Ideally Suited for Automated Assembly |
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MMBZ5221B MMBZ5259B 350mW OT-23 OT-23, MIL-STD-202, KJ-3 | |
FCPF380N60
Abstract: fcp380N60
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FCP380N60 FCPF380N60 FCPF380N60 | |
FCD380N60EContextual Info: SuperFET II FCD380N60E 600V N-Channel MOSFET Features Description ® SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower |
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FCD380N60E FCD380N60E | |
FCD600N60ZContextual Info: SuperFET II FCD600N60Z 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower |
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FCD600N60Z FCD600N60Z |