GENERAL SEMICONDUCTOR DIODE MARKING ME Search Results

DF10S

Abstract: df08s DF06S DF01S JESD22-B102 J-STD-002 DF005S DF06SE3 Diode df01s
Contextual Info: DF005S thru DF10S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers FEATURES • UL recognition, file number E54214 • Ideal for automated placement ~ • High surge current capability • Meets MSL level 1, per J-STD-020,

FCD5N60

Contextual Info: SuperFET TM FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

37n60

Abstract: 7n60 fairchild fairchild 7n60 FCU7N60TU FCD7N60
Contextual Info: SuperFET TM FCD7N60 / FCU7N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

682 SOT23 MARKING

Contextual Info: ON Semiconductort Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio

DF04S

Abstract: DF06S DATASHEET DF01S DF06S DF02S diode BY 399 DF10S JESD22-B102D J-STD-002B
Contextual Info: DF005S thru DF10S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers FEATURES • UL Recognition, file number E54214 • Ideal for automated placement ~ • High surge current capability • Meets MSL level 1, per J-STD-020C, LF max peak

Contextual Info: ON Semiconductort MMBV409LT1 Silicon Tuning Diode ON Semiconductor Preferred Device These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies

DFA08S

Abstract: DFA10S DF06SAE3 DF06SA DFA04S DFA02S DF005SA DF08S DF08SA DF10SA
Contextual Info: DF005SA thru DF10SA New Product Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers FEATURES • UL Recognition, file number E54214 • Ideal for automated placement ~ • Middle surge current capability • Meets MSL level 1, per J-STD-020C, LF max peak

Diode 1

Contextual Info: ON Semiconductort MMBV3102LT1 Silicon Tuning Diode ON Semiconductor Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods.

DF005S

Abstract: DF01S
Contextual Info: DF005S thru DF10S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers FEATURES • UL recognition, file number E54214 • Ideal for automated placement ~ • High surge current capability • Meets MSL level 1, per J-STD-020,

KE5 diode

Abstract: diode marking kk4 surface mount marking bg vr 1
Contextual Info:
MMBZ5221B-G - MMBZ5259B-G SENSITRON SEMICONDUCTOR 350mW SURFACE MOUNT ZENER DIODE Green Products Data Sheet 5200, Rev. - Features • · · · Planar Die Construction 350mW Power Dissipation on FR-4 PCB General Purpose, Medium Current A Ideally Suited for Automated Assembly

T 4512 H diode

Abstract: ps 4512 diode diode T 4512 H 1N5551US 1N5550 1N5550US 1N5551 1N5552 1N5554 1N5554US
Contextual Info: This documentation and process conversion measures necessary to comply with this revision shall be completed by 22 Oct 94, | INCH-POUND | I_ i MIL-S-19500/4200 22 July 1994 SUPERSEDING MIL-S-19500/420C 15 June 1992 MI L I T A R Y SP EC IF IC AT IO N

DFA10S

Abstract: DF06SA-E3 DFA08S DFA02S DF005SA
Contextual Info: New Product DF005SA thru DF10SA Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers FEATURES • UL recognition, file number E54214 • Ideal for automated placement ~ • Middle surge current capability • Meets MSL level 1, per J-STD-020,

DFA08S

Abstract: DFA10S DF02SA DFA04S DF08S DF005SA DF10SA DFA005S JESD22-B102 J-STD-002
Contextual Info: New Product DF005SA thru DF10SA Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers FEATURES • UL recognition, file number E54214 • Ideal for automated placement ~ • Middle surge current capability • Meets MSL level 1, per J-STD-020,

lite-on 1N4148W

Abstract: MARKING CODE diode sod123 t4 DIODE T4 marking diode marking 355 sod 123 t4 marking marking code t4 1N4148W LITEON MARKING as SOD123 diode MARKING CODE T4 diode marking T4 sod123
Contextual Info: 1N4148W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.15 Ampere SOD-123 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOD-123 MECHANICAL DATA

Contextual Info: SuperFET II FCP600N60Z / FCPF600N60Z 600V N-Channel MOSFET Description Features ® SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

FCPF400N60

Contextual Info: SuperFET II FCPF400N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

FCD600N60Z

Contextual Info: SuperFET II FCD600N60Z 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

Contextual Info: SuperFET II FCD900N60Z 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

Contextual Info: SuperFET II FCD900N60Z 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

Contextual Info: SuperFET II FCP380N60 / FCPF380N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

KJ-3

Contextual Info:
MMBZ5221B - MMBZ5259B SENSITRON SEMICONDUCTOR 350mW SURFACE MOUNT ZENER DIODE Data Sheet 2675, Rev. - Features • · · · Planar Die Construction 350mW Power Dissipation on FR-4 PCB General Purpose, Medium Current A Ideally Suited for Automated Assembly

FCPF380N60

Abstract: fcp380N60
Contextual Info: SuperFET II FCP380N60 / FCPF380N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

FCD380N60E

Contextual Info: SuperFET II FCD380N60E 600V N-Channel MOSFET Features Description ® SuperFET II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower

FCD600N60Z

Contextual Info: SuperFET II FCD600N60Z 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower