GE-2 TRANSISTOR Search Results

ge-20 transistor

Abstract: ge-10 transistor transistor DJ marking transistor DJ 30 at GE Sensing Transistor GE 67 DJ marking DJ5GE GE-17 diagrams
Contextual Info: Proximity Sensors Inductive Nickel-plated Brass Housing Types DJ, M 14, PG 21 • Nickel-plated brass housing, cylindrical • Diameter: M 14, PG 21 • Sensing distance: 2 to 6 mm • Power supply: DJ 2 GE 24 VDC DJ 5 GE 24 VDC DJ 6 GE 10 to 40 VDC • Output: Transistor NPN, make switching

ld photocoupler

Abstract: KB826 KB826A KB826B KB826L M05A GE photocoupler
Contextual Info: PHOTOCOUPLER KB826 GE NERAL PURPOSE HIG H ISOLATIO N VOLTA GE SING LE TRANSISTOR TYPE HIG H COLLECTOR VOLTA GE PHOTOCOUPLER SERIES FEATURES 1.High isolation voltage between input and output Viso= 5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 3.Compact dual-in-line package

BD3010AFV

Contextual Info: Data eet Datasheet 200mA 2 A LDO O Regulattor with w V Voltag ge De etecto or and d Watchdo og Timer BD3010AFV B V-M Ge eneral Descrription Key K Specifica ations  Regulato or Supply Volttage Range: 5.6 V to 36 6V Range:  WDT Su upply Voltage R 6.0 V to 36

marking code 10 sot23

Abstract: PNP POWER TRANSISTOR SOT23 PBSS5230T
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5230T 30 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 30 V, 2 A PNP low VCEsat (BISS) transistor PBSS5230T FEATURES QUICK REFERENCE DATA

ge-2 transistor

Contextual Info: M C C TO-92MOD Plastic-Encapsulate T r a n s is t o r s ^ ^ 2SC1627A TRANSISTOR NPN FEATURES T O - 9 2 M O D P cm : 0.8W (Tam b=25“C ) current 1.E M IT T E R Ic m : 0.4 A 2.C O L L E C T O R vo lta ge 3.B A S E V(BR)CBO: 80 V M d s to ra g e ju n ctio n tem perature ran ge

CHDTB114TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB114TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA115TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA115TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA114TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

IRF822

Abstract: IRF823
Contextual Info: [FSMi^-KfiS FUT RELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IR F 8 2 2 ,8 2 3

CHDTB123TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB123TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA124TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA124TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA144TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA114GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA114GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA143TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA143TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTB143TKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTB143TKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA115GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA115GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

CHDTA144GKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHDTA144GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)

Contextual Info: 19-1206; Rev 0; 3/97 +2 .5 V t o +5 .5 V, Low -Pow e r, Single /Dua l, 8 -Bit Volt a ge -Out put DACs in µM AX Pa c k a ge The 10MHz, 3-wire serial interface is compatible with SPI /QSPI™ and Microwire™ interface standards. Double-buffered inputs provide flexibility when updating the DACs; the input and DAC registers can be

Contextual Info: 3 GE » _ _ • 7 = 1 2 ^ 2 3 7 Ü03D120 2 ■ [ Z J S GS-THOMSON 'T '-3 ,C M > 6 s-thomson/ [^D(g^(Q)g[Lg(g¥^(Q)^D S_ BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al

Contextual Info: ' Sv m Se m i ' SOT -23 Plastic Encapsulate Transistors 5YM5ÊMI 5EMIC0MDUCT0R MMBT2907AL GE 2 .4 1.3 T1 TRANSI ST OR PNP FEA TURES SO T-23 Power dissipation Pa 1. BASE : 0.3 W <(iflb=25'C) Collector current 2. EMITTER 3. COLLECT fcn : - 0. a OR Collector-base voltage

Contextual Info: 2 3 Û 3 3 C14 0Q00Ö4Ö 362 • CMBT6517 HIGH-VOLTAGE TRANSISTOR N -F -N transistor Marking CMBT6517 = 1Z PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ■C> 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

uts 7805

Abstract: 7805 voltage regulator IC function
Contextual Info: 19-0001; Rev 2; 8/97 M ic roproc e ssor Volt a ge M onit or w it h Dua l Ove r/U nde rvolt a ge De t e c t ion The ICL7665 warns microprocessors µPs of overvoltage and undervoltage conditions. It draws a typical operating current of only 3µA. The trip points and hysteresis of the two voltage detectors are individually programmed via external resistors to any voltage greater

H13A1

Abstract: photo interrupter module h13a1 photo interrupter module H13A2 H13A1-H13A2 H13A 4N38 4N38A H11A10 H11AA1
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 100 100 100 100 50 50 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 30 30 1 1 2 2 2

2N3859

Abstract: 2N3860 2N3859A 2N3659 2N3858 E1307 2N3868 BA 4213 2N3658 2N3858-60
Contextual Info: SOLI» STATE ÜÏ D E | 3Ö7S0Ö1 D G l T ^ n - Signal Transistors 2N3858-60, 2N3858A, 2N3859A Silicon Transistors TO-98 The GE/RCA 2 N 3 858,2N 3859 and 2N3860 are planar epitaxlal passivated NPN silicon transistors designed primarily for