GE SEMICONDUCTOR Search Results
GE SEMICONDUCTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MG800FXF1JMS3 | Toshiba Electronic Devices & Storage Corporation | N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET | Datasheet | ||
| TCK423G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK422G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK424G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK401G | Toshiba Electronic Devices & Storage Corporation | MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet |
GE SEMICONDUCTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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FDN36MC100GD
Abstract: magnetic Contactor wiring diagrams and float switch CL03A FDN36MC080GD star delta FORWARD REVERSE STARTER GPF10C02 GPS1bsah LG0006P1B0 CL07A CL03A-CL04A
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h-1340b-9000c/4601/e/exfdn36mc100gd+9 | |
A434 RF MODULE
Abstract: Pertinax thermal conductivity KEMA KEUR thermostat KEMA keur type 900 kema keur junction ip65 British standard bs 5486 part 1 856022 85-6018 Edison Screw Based LED ligh KEMA keur t 85
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b-9000e/5405/e/exa434 rf modulepertinax thermal conductivity+8 | |
GE capacitors
Abstract: dielectrol 35 GE SCR 1000 AMP GE capacitor CATALOG GE film capacitors catalog A28F5602 A26F7502 97F7500 97F7512 A28F5606
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128a2244ac021128a2244ab025128a2244ab022128a2244ab023+12 | |
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Contextual Info: Passive Optical Netaworks EPON/GE-PON Xenon II EPON/GE-PON Processor CX9520x Conexant’s portfolio includes a comprehensive suite of semiconductor solutions for broadband communications and the digital home. • The Xenon II Gigabit Ethernet passive optical network GE-PON processor |
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cx9520x3ah-200402919a | |
ARM9 processor based Circuit Diagram
Abstract: VDSL2 Modem circuit diagram ARM9 AES olt conexant
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cx9520x3ah-200402919aarm9 processor based circuit diagram+3 | |
ld photocoupler
Abstract: KB826 KB826A KB826B KB826L M05A GE photocoupler
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kb826e225308dsad1546jun/19/2003+6 | |
transistor D313 circuit diagram application
Abstract: c06-15 IC503 4013BT RC22H PHILIPS R114665 r 1206, r0603 philips resistor 2322 LDR 03 PHOTO RESISTOR Philips X7R
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an98090om5802tza30xxtza3030+15 | |
1N34A reverse recoveryContextual Info: SEMICONDUCTOR TECHNOLOGY^ OSE I | fll3b4Sfl G D D D a S D S r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 “C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge |
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1n34a1n60a1n128a1n198a+7 | |
1-10V dimmer
Abstract: dimmer 1-10V design IR Receiver Modules 170 DB702 DP721R Niko Semiconductor automatic room power saving system using PIR SWC-04 GSM based home automation system smart two wire dimmer
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h-1340b-9000r/2371/e/x1-10v dimmer+9 | |
DP721R
Abstract: FGT312CO 0-10v dimmer circuits Niko Semiconductor FGE312ME SWC04M dimmer 1-10V design PIR SENSOR 750 s DP721RT smoke sensor
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h-1340b-9000r/2371/e/xdp721r+9 | |
PDINP075FC11-W-0
Abstract: 850nm APD 850nm photodiode pigtail germanium photodiode PIN PDINV300FC21-M-0 D10-210 InGaAs apd photodiode photodiode germanium PDGAJ1001FCA-0-0-01 PDINC1003FCA-0-0-01
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1100nm1650nm2100nm100micron+10 | |
"Acceleration Sensor"
Abstract: gravity sensor IC MAS1390P pressure sensor sp 20 acceleration sensor ultrasonic range meter IC AARY
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mas1390pacceleration sensorgravity sensor icpressure sensor sp 20+2 | |
PDINP075500A-0-0-01
Abstract: PD-LD 850nm APD 850nm photodiode pigtail pigtail pin photodiode ge PDINV300SC2A-M-0 PDSIU500ST73-T-0 Si apd photodiode PDGAJ1001FCA-0-0-01 PDINC100SC22-M-0
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1100nm1650nm2100nm100micron+10 | |
88LX3142
Abstract: 88LX2718 88E1510 GE-DW360F 88LX-2
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ge-dw360f88e151088lx314288lx2718+3 | |
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QT10031U21MS
Abstract: QT10044U21MS QT10210U21MS 3 phase, 415v and 11 kw induction motor QT20058 QT10017U21MS QT1010 QT10310N21MS 18S-G QT10210N21MS
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h-1340b-9000c/4594/e/exqt10031u21ms+9 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14528B Dual Monostable Multivibrator L SUFFIX CERAM IC CASE 620 The M C 1 45 28B is a dual, retrig ge rable, rese tta ble m on ostab le m u ltivib ra tor. It m ay be trigg ere d from e ith e r e d ge o f an in pu t pulse, and p ro du ces an |
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mc14528bc14528b/dmc14528b/d | |
PA 0016 diagramContextual Info: 19-0403; Rev 0; 6/95 Dua l, 8 -Bit , Volt a ge -Out put Se ria l DAC in 8 -Pin SO Pa c k a ge _Applic a t ions _Fe a t ure s ♦ Operates from a Single +2.7V to +5.5V Supply ♦ Dual Buffered Voltage Output |
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max522cpamax522csamax522epamax522esa+2 | |
EDE2516ABSE-GE
Abstract: EDE2516ABSE-GE-E DDR2-800 EDE2508ABSE-GE EDE2508ABSE-GE-E
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ede2508abse-geede2516abse-geede2508abseede2516abse+6 | |
TLGE33CP
Abstract: TLOE33CP TLPYE33CP TLYE33CP
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tloe33cptlge33cptlfge33cptlpye33cp+1 | |
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Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM for HYPER DIMM EDE2508ABSE-GE 32M words x 8 bits EDE2516ABSE-GE (16M words × 16 bits) Specifications Features • Density: 256M bits • Organization ⎯ 8M words × 8 bits × 4 banks (EDE2508ABSE) ⎯ 4M words × 16 bits × 4 banks (EDE2516ABSE) |
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ede2508abse-geede2516abse-geede2508abseede2516abse+3 | |
14538B
Abstract: 4098* monostable dual retriggerable
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OCR Scan |
mc14538bc14538b/dmc14538b/d14538b+1 | |
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Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM for HYPER DIMM L EO EDE2508ABSE-GE 32M words x 8 bits EDE2516ABSE-GE (16M words × 16 bits) Features • Density: 256M bits • Organization 8M words × 8 bits × 4 banks (EDE2508ABSE) 4M words × 16 bits × 4 banks (EDE2516ABSE) |
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ede2508abse-geede2516abse-gee0657e31m01e0107 | |
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Contextual Info: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM for HYPER DIMM EDE2508ABSE-GE 32M words x 8 bits EDE2516ABSE-GE (16M words × 16 bits) Description Features The EDE2508ABSE is a 256M bits DDR2 SDRAM organized as 8,388,608 words × 8 bits × 4 banks. It is packaged in 60-ball FBGA (µBGA) package. |
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ede2508abse-geede2516abse-geede2508abse60-ball+4 | |
BD3010AFVContextual Info: Data eet Datasheet 200mA 2 A LDO O Regulattor with w V Voltag ge De etecto or and d Watchdo og Timer BD3010AFV B V-M Ge eneral Descrription Key K Specifica ations Regulato or Supply Volttage Range: 5.6 V to 36 6V Range: WDT Su upply Voltage R 6.0 V to 36 |
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200mabd3010afvbd3010afv-bd301+1 | |