GE OPTO DETECTOR Search Results

photo transistor L14F

Abstract: photo transistor 2n5777 2N5779 L1402 L14F 2N5780 L14A502 L14f photo transistor L14B1 photo transistor L14e2
Contextual Info: OPTO ELECTRONICS DETECTORS— PHOTOTRANSISTORS Photo Current @ H = Tungsten 2mW/cm2 @ 2870° K II Min. mA JEDEC No. GE Type: Rise 8, Fall Times Typical Photo Current GaAs Source II Mat. (mA) II Min. (mA) II Max. (mA) V e to tf U se e) Min. Package Outline

CNY 17-2 optocoupler

Abstract: GE cny17 CNY 17-1 siemens opto coupler siemens n23f GE opto detector siemens CNY17-2
Contextual Info: SIEMENS CMPN TS t OPTO MME 1 • fl23b32b 0004177 S BI SI EX SIEM EN S CNY17 SER IES SINGLE CHANNEL PHOTOTRANSISTOR OPTOCOUPLER - H l- 2 3 Pa cka ge D im e nsions in In ch es mm xrniti ■343(17) .*»(»«) .1 #(3J) .130(33) 1 T~ r \ " o- rSS .122(3.1) 3

GE SCR

Abstract: SCR 100A L911U GE miniature Lamp GE SCR Manual L911A L911B L911G L811B L811F
Contextual Info: OPTO ELECTRONICS D ET E C T O R S -P R O G R A M M A B LE UNIJUNCTION TRANSISTORS GE Type Anode-Cathode V oltag e Max. V D.C. Anode Current Max. (mAJ RiseTirrc» tr Typical (nsec) Irra d ia n ce to T rig g e r @ Rg — 800K ft, Vs = 10V M ax. Forward on Voltagi?

35455D

Abstract: FCD811 fcd 820 15010 340 opto isolator FCD820
Contextual Info: Sem iconductors Fairchild Sem iconductors Opto-electr.onics - Couplers C O N N E C T IO N D I A G R A M 4 D I M E N S IO N S IN S F C D 811, F C D 820 Optically Coupled Isolators - 0 -3 4 0 — A B S O L U T E M A X IM U M R A T IN G S S to ra ge temperature

Contextual Info: CUSTOM PHOTODI ODES AND A S S E M B L I E S H ow d o I select th e righ t p h o to d io d e f o r m y a p p lica tion ? H ow d o I p ick th e righ t p a ck a ge? W hat d o I n e e d to co n sid er w hen d ev elo p in g th e righ t op to so lu tio n i If you find yourself asking these questions for your opto assembly

Contextual Info: HIGH-POWER GaAIAs IR EMITTERS .030 040 OD-24F FEATURES • High current capability • 880nm peak emission for optimum matching with silicon detectors .015 h , 1.00 * M IN . • Hermetically sealed TO-46 package • 100% test for minimum power requirement

siemens SFH nm

Contextual Info: SIEMENS CMPNTS-i OPTO MME D SIEM ENS • ô£3 a3Eb> G O O S O ^ O 2 B I S I E X SFH350 WITH IR FILTER SFH350F PLASTIC FIBER OPTIC PHOTOTRANSISTOR DETECTOR nr-m-CA Preliminary Data Sheet Package Dim ensions in Inches (mm FEATURES M axim um R a tin gs • 2.3 mm Aperture H o ld s Standard

IC AL 6001

Abstract: SIEMENS WF 470 Phototransistor SFH 600-2 GE opto detector siemens lsl lc1f
Contextual Info: S I E M EN S C M P N T S i OPTO MME D fla3b32b D Q Q S G S M T B S I E X m SIEM EN S SFH600 SERIES PHOTOTRANSISTOR OPTOCOUPLER '" H I - 2 3 Package Dimension in Inches mm 30717LSL J) h J .Ml (7.4) .130(3.3) n u E S .02 f Un. .142<3«) .122(3.1) .too (2.S4)

Contextual Info: iC-OF •Haus 3-BIT OPTO ENCODER FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Monolithic construction with integrated photodiodes ensures excellent matching and technical reliability Short track spacing of 600//m Elimination of dark currents through differential scan n io g p

A New Detector for IR LED Light

Abstract: Silicon Detector OSD5-5T GaAlAs detector IR photodiode 880 nm 850 nm LED RG830 Longwave laser ingaas LED IR photodiode 95w
Contextual Info: A NEW DETECTOR FOR IRLED LIGHT As reprinted from SENSORS Magazine, December 1996 Issue A New Detector for IR LED Light A new GaAIAs processing technique has led to a wavelength-specific detector for 880 nm light that requires no signal modulation or optical filtering to eliminate

Contextual Info: SIEMENS MCT6 DUAL PHOTOTRANSISTOR OPTOCOUPLER Current Transfer Ratio, 20% Minimum Two Isolated Channels Per Package Isolation Text Voltage, 5300 VACRUS Underwriters Lab File #E52744 VDE #0884 Available with Option 1 DESCRIPTION P a cka ge D im e n sio n s in Inches m m

LD74

Contextual Info: SIEMENS CMPNTS t OPTO 4HE D S IE M E N S BS Ô23b32b 0005003 3 D S I E X IL 74S IN G L E C H A N N E L ILD74 DUAL C H A N N E L ILQ 74 QUAD C H A N N E L , , o-, ~T- M |- « 3 PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions In Inches mm IL 74 (Sin gle Channel)

GE opto detector

Contextual Info: SFH6943 Infineon Low Current Input Mini Optocoupler technologies ' Dimensions in Inches mm J l Anode i2 * n r Anode 2 .016 (.41) Common 3 1 i Cathode V Ce = 5 V Anode 4 L I • Good CTR Linearity Versus Forward Current • Minor CTR Degradation • Field Effect Stable by TRIOS

MOC1005

Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC1005 M O C 1006 6-P in D IP O p to is o la to rs Transistor O utput These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • •

Contextual Info: IL250/251/252 ILD250/251/252 SINGLE CHANNEL DUAL CHANNEL Bidirectional Input Optocoupler FEA T U R E S • S e le c te d C u rre n t T ra n s fe r R a tio s 20% , 50% , 100% M in im u m Dimensions in inches mm Single Channel • A C o r P o la rity In s e n s itiv e In p u t

Unit junction transistor UJT

Abstract: ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc
Contextual Info: motorola sc I diodes/opto sse d • ti3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW D ESIG N S 1^37^1 2N5431 P N U n ijunction T ra n sisto r Silico n A nnular Unijunction Transistor . i characterized primarily for low interbase-voltage operation in sensing, pulse

dual channel opto triac

Abstract: SFH6943 SFH6943-4 SFH6943-2 optocouplers D615 Selector Guide
Contextual Info: - * ' •% % i * *" *r •% r ’ . « * > - .» £ £ '* * ,: ’ ï ■* V ;c/ ^ iS Ä ? Optocouplers Solici State Relays t: i j ifrared Data Transceivers ta Access ¡111 H É o Application Notes Optocou piers Package Type Schematic Part Number Current Transfer

F110

Contextual Info: ILD256T Infi ne on Dual AC Input Phototransistor Small Outline Surface Mount Optocoupler te c h n o lo g ie s FEATURES • Each Channel: Guaranteed CTR Symmetry, 2:1 Maximum • Bidirectional AC Input • SOIC-8 Surface Mountable Package • Standard Lead Spacing, .05"

n47n

Abstract: 617A2
Contextual Info: SFH610A/617A Infin e on 5.3 kV TRIOS Optocoupler High Reliability technologies FEATURES • Variety of Current Transfer Ratios at lF=10 mA - SFH610A/617A-1, 40-80% - SFH610A/617A-2,63-125% - SFH610A/617A-3,100-200% - SFH610A/617A-4,160-320% Low CTR Degradation

340 opto isolator

Abstract: h11aa1 opto isolator GE opto detector
Contextual Info: SIEMENS CMPNTS-i OPTO fi23ti32b QOOHTfl? 0 M S I E X 44E D SIEM ENS H11AA1 BIDIRECTIONAL INPUT OPTOCOUPLER 1z Y /-?3 Package Dimensions in Inches mm .340 (8 Wt — ^60 (9.14) — » .240 (010) ¿60(360) _» - <k ft ft Maximum Ratings FEATURES • • •

tt 2074

Abstract: V1525 photodiode detector
Contextual Info: OPTO 13 T E C H N O L O G Y INC D | I b û D B 5 4 S □ □ □ □ □ 3 D fi D OP-TEC 33 -* • 03 DIA. 0 3 0 D IA LENS LENS - * \ -11 T L X i .43 "It 1 > 1 [ ! 1 1 : H - t- -n O RANGE = B L A C K = G ND. \ .43 4b0 .460 i III ! • ' O RANGE = BLACK

2N5779

Abstract: L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FA LL R IS E M AX. M IN . M A X . P E A K E M IS S IO N W A V ELEN G TH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A lp = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . mW PAGE M A X . Ip CO NT.

7400

Contextual Info: Literaturhinweise Information on Literature Auszug aus unserem Literaturverzeichnis 12.93 Exerpt from our Literature Guide 12.93 Bestell-Nr.: B192-H6763-X-X-7400 Ordering No.: B192-H6763-X-X-7400 Titel Title Bestell-Nr. Ordering Code Art Ausgabe Class. Edition

elmwood sensors ltd

Abstract: elmwood thermal switch saft rectifier ABB sensycon SICK OPTEX elmwood sensors Oscillatek abb entrelec relays Litton Electron Devices microwave tubes Anzac Electronics
Contextual Info: S OURCE ESB’ S Last Two Years of M ANUFACTURER N AME C HANGES Specifying and buying parts is hard enough without constant name changes due to manufacturing mergers, acquisitions and company spin-offs. Historically, each regional Electronics Source Book has diligently tracked these changes to save you time and headaches. We're happy to provide this