GE C 716 PN Search Results

2N6730

Abstract: 2N6728 SE194 2N6716 7292n 2n 6718 2N6718 SE-194
Contextual Info: Silicon Planar Medium Power Transistors NPN 2N6716 2N6717 2N6718 PNP 2N6728 2N6729 2N6730 FEATURES • High V CE ratin g s up to 1 00 vo lts • Exceptional p o w e r dissip atio n cap a bility - 2 W @ T c a s e = 2 5 °C - 1W @ T amb = 2 5 °C • h FE specified up to 5 0 0 m A

0092B

Contextual Info: MMT75-PNP SILICON MMT76-NPN M IC R O M IN IA T U R E C O M PL EM EN T A R Y SILICO N SW ITCHING AN D A M P L IF IE R T R A N S IS T O R S C O M PLEM EN T A R Y SILICO N A N N U L A R T R A N SIS T O R S . . . designed fo r general-purpose sw itc h in g and am plifier application s

FS7-16

Abstract: vf246 VF1000
Contextual Info: PART NUMBERS C R Y S T A L S VFC CRYSTAL STANDARD PART NUMBERS " •, p a ge 16 p a ge 17 C l pF VM 6PN VM 6S PN 0 .0 3 2 7 6 8 12 NC38 NA NA NA 1 13 VF100 VFS100 VFSM 100 VFSM C100 1 .8 4 3 2 VF184 VFS184 VFSM 184 VFSM C 1 84 1 .8 4 3 2 13 VF184A VFS184A

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

Dow Corning 200

Abstract: 313L TEFZEL awg 12 GE C 716 PN
Contextual Info: Model 313L FEATURES: • • • • All-welded, stainless steel construction Rugged, all encapsulated electronics. Leakproof 1/2” NPT conduit thread standard Standard PRESSURE RANGES: • From 0-3 through 0-100 psig See ordering guide. ACCURACY: • From ±0.1% FSO (RSS) to ±0.5% FSO (RSS)

2N2222A zetex

Abstract: MAX715CNG motorola b6n MAX714 MAX715CWG MAX716CWI MAX716EWI MAX714CPE MAX714CWE MAX715
Contextual Info: 1 9 -4 5 0 7 ; R e v . 1; 3 /9 2 B a ttery-P ow ered Supply S y s te m s The M AX716 com bines circuitry for four low-dropout linear regulators, three D C -D C sw itching regulators, and powersu pervisory functions on a single IC. All but one regulator output is logic controlled so that loads m ay be shut down

87S96

Abstract: 74S474 74S475 87S95
Contextual Info: Bipolar ROMs DM 77S95/DM 87S95 4096-B it 512 x 8 Open-Collector ROM DM 77S96/DM 87S96 4096- it (512 x 8) TRI-STATE ROM g en eral d e s c rip tio n fe a tu re s These S c h o ttk y memories are organized in the popular 512 w ords by 8 bits c o n fig u ra tio n . Four m em ory enable

0PI3153

Abstract: 0PI3253 OPI3153 OPI3253
Contextual Info: OPTEK T E CH NO LOG Y Op to e le ctro n ics D iv is io n T R W Electronic Components Group INC ObE D | L 7 TflSfiO 00002 SS 1 9 8 7 C o s t S a v e r P r o d u c t! C a ll T R W fo r m o re in fo rm a tio n ! FVoduct Bulletin 5226 January 1985 7 I r # ? îîr "

MAX749CPA

Contextual Info: 19-0143; Rev 1; 2/95 NUAL KIT MA ATION HEET S A EVALU T A WS D FOLLO Digit a lly Adjust a ble LCD Bia s Supply _Applic a t ions Notebook Computers _Fe a t ure s ♦ +2.0V to +6.0V Input Voltage Range ♦ Flexible Control of Output Voltage:

Contextual Info: Numeric Index Family Specification and General Information Device Data Sheets Package Data This databook contains device specifications for Motorola's ECLinPS advanced ECL logic family. ECLinPS ECL in picoseconds was developed in response to the need for an even higher performance

Contextual Info: FGA30N65SMD 650 V, 30 A Field Stop IGBT Features General Description • Maximum Junction Temperature : TJ =175oC Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low

Contextual Info: FGA30N65SMD 650 V, 30 A Field Stop IGBT Features General Description o Using novel field stop IGBT technology, Fairchild ’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and

Contextual Info: FGA30N65SMD 650 V, 30 A Field Stop IGBT Features General Description o • Maximum Junction Temperature : TJ =175 C Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low

FZJ 101

Abstract: BC337-01 FT053 T1905 usaf516es047m 2SC114 transistor NS064 BC338-01 PT1836 PT1837
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

VDE 0660 iec 947-2

Abstract: gps1bh GE Contactor uimp 8kV SFAL11N GPS1bsah SFVH03 GPAC11LLA GPEF55A ge contactor 0660T
Contextual Info: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical

Harris CA3046

Abstract: CA3046 7h0 ITT ICAN-5296
Contextual Info: S E MI CON] SECTOR 4DE D 4302271 J i HARRIS 003220b I HAS CA3045 CA3046 General Purpose N -P-N Transistor Arrays August 1991 fea tu res Description • Two Matched Tran sisto rs: V b ë Matched ±5mV; Input Offset Current 2pA Max at lc = 1mA The CA304S and CA3046 each consist of fivo general

749 MOSFET TRANSISTOR motorola

Abstract: 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA
Contextual Info: 19-0143; Rev 0; 5/93 V M y JX IV M D igitally A djustable LCD Bias Supply _ G eneral D escription .F eatures The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly

749 MOSFET TRANSISTOR motorola

Abstract: MAX749CPA
Contextual Info: 19-0143; Rev 1; 2/95 D igitally Adjustable LCD Bias Supply A unique current-limited control scheme reduces supply current and maximizes efficiency, while a high switching frequency up to 500kHz minimizes the size of external components. Quiescent current is only 60|jA max and is

Contextual Info: I II II C •■III R T R ü r S T S E M / C O N O U C T O R CAT28F010 1 Megabit CMOS Flash Memory FEATURES ■ Fast Read Access Time: 90/120/150 ns Commercial and Industrial Temperature Ranges ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

E355D

Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Contextual Info: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20

tle4214 dip-8

Abstract: siemens essa
Contextual Info: SIEMENS Intelligent Double Low-Side Switch 2 x 0.5 A TLE 4214 B ip olar IC F eatures • D ouble low -side sw itch, 2 x 0.5 A • Pow er lim itation • O v e rte m p era tu re shutdow n • O ve rvo lta g e shutdow n • Status m onitoring • S ho rted -lo a d protection

triac tic 236

Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published