GE 639 TRANSISTOR Search Results

transistor C 639 W

Abstract: bc736 transistor BC637 complement BC635 transistor 639 fa 506 BC637 BC639 TI 506 transistor I100O
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638f640 ABSOLUTE MAXIMUM RATINGS Ta= 250C Characteristic C o lle c to r E m itter V olta ge : at R Be = 1Kohm : : C o lle c to r E m itter V olta ge :

Halbleiterbauelemente DDR

Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der

ba 5888 fp

Abstract: md 5408 usb connector CRT TCL COLOUR TV SCHEMATIC DIAGRAM CRT TCL-2027u COLOUR TV SCHEMATIC DIAGRAM free CRT TCL-2027u COLOUR TV SCHEMATIC DIAGRAM Solid state CCIR ca 152 CD 5888 1412D kre 101 2065 md 5408
Contextual Info: STPC Atlas Programming Manual Issue 1.0 July 2, 2002 STMicroelectronics 1/639 Information provided is believed to be accurate and reliable. However, ST Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringements of patents or other

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

Contextual Info: DA TA SHEET NEC / _ / TFT COLOR LCD MODULE N L6448AC20-06 17cm 6.5 type , 640x480 pixels 262144/4096 colors, incorporated edge-light type backlight high brightness, inverter separated from module DESCRIPTION NL6448AC20-06 is a TFT(thin film transistor) active m atrix color liquid crystal display(LCD) com prising am or­

Contextual Info: NPN 180, 200 V. ^ General 3 ^ Semiconductor ^ Industries, Inc. 5 0 A m p S w it c h in g GSDS50018. 20 C 2R R c2r h ig h speed / h ig h po w e r s w it c h in g t r a n s is t o r s The GSD series is a reliable NPN double diffused epitaxial transistor designed fo r

2SD675

Abstract: 2sd676 2SD674 2SD673 2SB631 2SD600 2SD612 2SD613 2SD638 2SD639
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TO2506

Contextual Info: X RFW2N06RLE N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors Features Package 4-PIN HEXDIP TOP VIEW • 2A.60V • rDS on = 0.160ft • UIS Rating Curve (Single Pulse) • Design Optimized For 5 Volt Gate Drive DRAIN • Can be Driven Directly from CMOS, NMOS, TTL Circuits

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Contextual Info: MG200Q1ZS40 TOSHIBA M G 2 0 0 Q 1 ZS 4 0 TO SH IBA GTR M O D ULE SILICON IM CHANNEL IGBT HIGH P O W ER SW ITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. • • • • • H igh Input Impedance High Speed : tf= 0 .5 /;s Max. trr = 0.5/is (Max.)

ca3096

Abstract: CA3096AE 639 TRANSISTOR PNP CA3096E
Contextual Info: ui H A R R CA3096 I S S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • F ive-Independent Transistors The CA3096C, CA3Û96, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

tyco igbt

Abstract: V23990-P485-A D813 tyco pim GE 639
Contextual Info: V23990-P485-A flow PIM 1, 600V version 0303 Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode Dauergrenzstrom

AX653

Abstract: L640A MAX639CPA
Contextual Info: 19-4505; Rev 3; 8/97 J S ÏS ÏÏ!S > k i y j x i y v i 5V/3.3V/3V/Adjustable, High-Efficiency, L o w I , S t e p - D o w n DC-DC C o n v e r t e r s q The M AX639/M AX640/M AX653 ste p-do w n sw itchin g regulators provide high efficiency over a wide range of

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

Transistor A1H

Abstract: BA6860FS BA6862FS FORWARD REVERSE 3 PHASE MOTOR operation
Contextual Info: Motor driver ICs 3-phase motor driver BA6860FS/BA6862FS The BA6860FS and BA6862FS are 3-phase, full-wave, pseudo-linear m otor drivers suited for driving movie cam era cap stan m otors th a t can be op era te d at low voltages. T he ICs have a to rq u e rip p le can ce lla tio n c irc u it to reduce

Contextual Info: SG1644/SG2644/SG3644 5ILIŒ1N GENERAL DUAL HIGH SPEED DRIVER L IN E A R IN T E G R A T E D C IR C U IT S DESCRIPTION FEATURES The SG1644,2644, 3644 is a dual non-inverting monolithic high speed driver. This device utilizes high voltage Schottky logic to convert TTL signals to high speed outputs up to 18V. The totem

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Contextual Info: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets

BA6860FS

Abstract: BA6862FS 2x100 A1H Transistor dc motor high torque Transistor A1H
Contextual Info: Motor driver ICs 3-phase motor driver BA6860FS/BA6862FS The BA6860FS and BA6862FS are 3-phase, full-wave, pseudo-linear m otor drivers suited for driving movie cam era cap stan m otors th a t can be op era te d at low voltages. T he ICs have a to rq u e rip p le can ce lla tio n c irc u it to reduce

7B424

Abstract: MSM5117100
Contextual Info: O K I Sem iconductor M SM5117100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCR IPTIO N The MSM5117100 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM5117100 is OKI's CMOS silicon gate process technology.

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

Contextual Info: For Immilliate M i m e , Contaci four Lotal Salesperson B U R R -B R O W N r « H ^ VFC110 i High-Frequency VOLTAGE-TO-FREQUENCY CONVERTER FEATURES APPLICATIONS • HIGH-FREQUENCY OPERATION: 4MHz FS max • INTEGRATING A/D CONVERSION • PROCESS CONTROL

28ohm

Contextual Info: data sheet version 02/03 V23990-P443-C-PM flow PIM 0+E, 600V Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode