GE 59 TRANSISTOR Search Results

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3841 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION T h e 2SC 3841 is an NPN silicon ep ita xia l tra n s is to r in te n d e d for use as PACKAGE DIMENSIONS Units: mm U H F o scilla to rs and a U H F m ixer in a tu n e r of a T V receiver.

C327

Abstract: c328 transistor C328 IRGPC40M
Contextual Info: Preliminary Data Sheet PD - 9.1078 IRGPC40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: PD - 9.1033A International ËëlRectffier IRGP450U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e

GC 380

Abstract: D-12 IRGBC40F
Contextual Info: PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V

C6610

Abstract: GC 380 D-12 IRGBC40F
Contextual Info: PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V

g10 smd transistor

Abstract: IRGBC20KD2-S AN-994 SMD-220 GC smd diode
Contextual Info: PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes

IRGPC40F

Abstract: IGBT IRGPC40F gate turn-off
Contextual Info: PD - 9.1112 IRGPC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V

c649 transistor

Abstract: IRGP450UD2 diode c649
Contextual Info: Preliminary Data Sheet PD - 9.1065 IRGP450UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

transistor c900

Abstract: transistor c904 IRGBC20KD2 c897 C901 transistor c903 c901 transistor
Contextual Info: PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

c649 transistor

Abstract: diode c649 transistor irf 649 c650 diode C649 IRGP450UD2 IR 649 transistor 500v
Contextual Info: Preliminary Data Sheet PD - 9.1065 IRGP450UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

mj 340

Abstract: IRGPC40F
Contextual Info: PD - 9.1112 IRGPC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V

BR3X

Abstract: TO-3P ULTRA-FAST 60A 600V IRGPC20KD2
Contextual Info: PD - 9.1109 IRGPC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

igbt 400V 20A

Abstract: IRG4PC60U ic MARKING QG
Contextual Info: PD - 94443 IRG4PC60U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast Speed IGBT C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

632 diode

Contextual Info: POldEREX INC m U B 3TE I> tE K • TSTMbBl OOGMflB^ 1 * P R X _ Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 ID 1 2 1 2 2 Q

ID121215

Contextual Info: POUIEREX I N C m a r n 3*îE a ì> • 0004Ô27 _ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 A venue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 S «PRX ID 121215 ' r ~3<ì' J l

igbt 500V 15A

Abstract: CPV364MM c425 diode
Contextual Info: Preliminary Data Sheet PD - 5.035 CPV364MM Short Circuit Rated Fast IGBT IGBT SIP MODULE Features 1 • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

BUK426-100A

Contextual Info: 7 ^ 3 ? - / / Philips Components Data sheet status Product specification date of issue March 1991 BUK426-1OOA/B PowerMOS transistor PH I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.

Contextual Info: International ^Rectifier PD - 5.022B CPV364MF Fast IGBT IGBT SIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to

Contextual Info: S T U406D S amHop Microelectronics C orp. May 29,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -12A R DS (ON) ( m W )

IR 1838 T

Abstract: IRG4PF50WD
Contextual Info: PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies

022B

Abstract: CPV364MF
Contextual Info: PD - 5.022B CPV364MF Fast IGBT IGBT SIP MODULE Features • • • • 1 Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

SS TRANSISTOR

Abstract: L497A
Contextual Info: TL497AM, TL497AI, TL497AC SWITCHING VOLTAGE REGULATORS D 2 2 2 5 . JU N E 1 9 7 6 - R E V IS E D O C T O B E R 19 8 8 • High Efficiency . . . 6 0 % or Greater • Output Current . . . 500 mA • Input Current Limit Protection • TTL Compatible Inhibit •

OMRON C500-PS221

Abstract: OMRON C500-PS221 manual c500-ps223 omron 3G2A5-ID219 omron C200h oc224 C500-PS221 CT001 OMRON Operation Manual C1000H-SLK21-V1 Omron 3G2A5-ID218 c500-ap003
Contextual Info: Cat. No. W149-E1-02 SYSMAC C1000HF Programmable Controller SYSMAC C1000HF Programmable Controller Operation Manual Revised May 2003 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual.