GE 149 TRANSISTOR Search Results

TRANSISTOR BIPOLAR 400V 20A

Contextual Info: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: OM651OSC OM6511SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 500 Volt. 20 A n d 30 A m p , N - C h a n n e l IG B T W ith a Soft R ec o v ery Diode In A H e r m e t i c Metal P a c k a g e FEATURES • • • • • • • •

IRGMH40F

Abstract: S M 685 13A
Contextual Info: PD -91418B IRGMH40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

IGBT in TO92 Package

Abstract: OM6510SC OM6511SC
Contextual Info: OM 651OSC OM6511SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 500 Volt, 20 And 30 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package F EA TU R E S Isolated Hermetic Metal P ackage High Input Impedance Low On-Voltage

Contextual Info: FS 15 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 1200 V 15 A lc Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,167 °C/W DC, pro Z w e ig /p e ra rm

555 triangular wave

Contextual Info: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

transistor 20a

Contextual Info: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

0985

Abstract: ma 1050
Contextual Info: ERICSSON í PTF 10035 30 Watts, 1 . 9 - 2 . 0 GHz L D M O S Field Effect Transistor Description The 10035 is an internally matched common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 1.9 to 2.0 GHz. It is rated at 30 watts minimum

Contextual Info: FS 15 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/per module 0,167 °C/W DC, pro Zw eig/perarm 1 °C/W Maximum rated values VcES lc 1200 V 15 A 150 °C - 4 0 / + 150 °C

IRG4MC50U

Contextual Info: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency

Contextual Info: PD - 9.1454A International IGR Rectifier IRG4 BC4 0 F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency

100nj 100

Contextual Info: FS 15 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 1200 V 15 A ms 30 A tc = 25°C 125 W lc Ic r m Pta, Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module

f1010

Abstract: 555 triangular wave B-989
Contextual Info: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

TRANSISTOR 545

Abstract: IRG4MC50U
Contextual Info: PD -94273 IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency

IRF1010

Contextual Info: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IGBT 600V 12A

Abstract: TO-220AB transistor package ic MARKING QG ultraFast Recovery Bridge Rectifier IRF1010
Contextual Info: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD - 95445 IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

555 triangular wave

Abstract: transistor 45 f 122 Inductive Load Driver igbt transistor
Contextual Info: PD - 95445 IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

ERICSSON 10031

Abstract: PTF 10031 ericsson b
Contextual Info: ERICSSON ^ PTF 10031 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10031 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 45 watts minimum output power. Nitride surface passivation

Contextual Info: PD -9.1599 International K g l Rectifier IRG4BC20KD PREUMNARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short

IOR 451

Contextual Info: International IQR Rectifier PD - 9 .1 4 5 4 A IRG4BC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -6 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

ITE35C12

Abstract: ITE35F12
Contextual Info: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4313 -1.2 IT E 3 5 F 1 2 /IT E 3 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE35X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

Contextual Info: PD -91734 International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d for m otor control, tsc =10 as, @ 3 6 0 V V CE (start , T j = 1 2 5 °C ,