GE 048 TRANSISTOR Search Results

Contextual Info: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 S A 1 048 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1048©) AUDIO FREQUENCY AMPLIFIER APPLICATIONS LOW NOISE AUDIO FREQUENCY APPLICATIONS • Small Package. • High Voltage : V cE O = _ 50V (Min.)

TRANSISTOR BIPOLAR 400V 20A

Contextual Info: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

MHQ6100

Abstract: IC AL 6001
Contextual Info: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON

MM2896

Abstract: To206AF bo140
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications

3N170

Abstract: HCT810
Contextual Info: OPTEK TE CH NO LOG Y INC 4flE D • bTTflSflO 0001445 Tl? ■ OTK Preliminary Product Bulletin May 1989 OPTEK Surface Mount Switching MOSFET Transistor Type HCT810 .075 1.90 .061(1.55) 225(5.71) PIN 1 INDENTIFIER kJ GATE ■ .028(0.71) . .022(0.56) 4 .048(1.22)

VQE 22

Contextual Info: Preliminary Data Sheet PD - 9.1085 International IsHRectifier IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400H z V CES = 1 200V

transistor 20a

Contextual Info: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

555 triangular wave

Contextual Info: PD - 95428 IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4BC20W

Contextual Info: International I« R Rectifier PD - 9 .1 6 5 2 IRG4BC20W P R E L IM IN A R Y INSULATED GATE BIPOLAR TRANSISTOR Features Ic • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve

6d20

Abstract: 6D-20 IGT8D20 250M BE20 IGT8E20 VQE 23 E
Contextual Info: IGT8D20,E20 1ST TIM S^M OIS 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 O Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

Contextual Info: PD - 9.1454A International IGR Rectifier IRG4 BC4 0 F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

J 420 G

Contextual Info: International IGR Rectifier pd-91654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchm ark switching losses improve efficiency of all power supply topologies

Contextual Info: PD - 9.1654A International I«R Rectifier IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features • D e sign ed e xp ressly fo r S w itch -M od e Pow er Vqes —600V S up ply and PFC pow er factor correction a p plicatio ns • Ind u stry-b e n ch m a rk sw itch ing losses im prove

f1010

Abstract: 555 triangular wave B-989
Contextual Info: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IGBT 600V 12A

Abstract: TO-220AB transistor package ic MARKING QG ultraFast Recovery Bridge Rectifier IRF1010
Contextual Info: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

transistor IRG4BC10UD

Abstract: IRG4BC10UD
Contextual Info: PD -9.1677A International TOR Rectifier IRG4BC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT F ea tu re s • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode

555 triangular wave

Abstract: transistor 45 f 122 Inductive Load Driver igbt transistor
Contextual Info: PD - 95445 IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95445 IRG4BC20UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IOR 451

Contextual Info: International IQR Rectifier PD - 9 .1 4 5 4 A IRG4BC40F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1 -6 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

transistor iqr

Abstract: g-50Q IRG4BC20U
Contextual Info: International IQR Rectifier pd-9.i 448c IRG4BC20U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

AN-994

Abstract: IRG4BC30U-S m 60 n 03 g10
Contextual Info: PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

AN-994

Abstract: IRG4BC30U-S
Contextual Info: PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD -91734 International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d for m otor control, tsc =10 as, @ 3 6 0 V V CE (start , T j = 1 2 5 °C ,