GD15 Search Results

working of voltage stabilizer

Contextual Info: Voltage Stabilizer GD150M L im it R atings Minimum anode current Maximum anode current Minimum anode supply voltage 5 mA 30 m A 180 V C h aracte ristics Minimum running voltage at 5 m A 143 V Running voltage at 15 m A 145— 155 V 156 V Maximum running voltage at 30 m A

Contextual Info: 4ÔSS452 GD150Ô5 bST B I N R International S Rectifier IRFI510G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS CD Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance bSE D

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KMM5401000B/BG GD1514b 523 I SP1GK DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000B is a 1M bitsx40 Dynamic RAM high density memory module. The Samsung

IRFP460

Abstract: IRFP460 IR irfp460 mosfet
Contextual Info: International mg Rectifier 4ASS452 GD155M4 35T H I N R HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • • PD-9.512B IRFP460 Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

GD150

Abstract: voltage stabilizer CV1832 working of voltage stabilizer GD15-0 GD150M
Contextual Info: 19 Voltage Stabilizer GD150 M/S CV.1832 L im it R atings Minimum anode current Maximum anode current Minimum anode supply voltage 5 mA 30 m A 180 V C h aracte ristics Minimum Maximum Maximum Maximum ISSUE 2 running voltage at 5 m A 142 V 165 V running voltage at 30 m A

Contextual Info: 23C Voltage Stabilizer GD150P CV.2225 Lim it Ratings M in im um anode current M axim um anode current M inim um anode supply voltage (norm al room illum ination) A m b ie n t tem perature limits 5 mA 15 m A 180 V — 5 i° to + 9 0 ° C Characteristics 145— 154 V

Contextual Info: 传感器|上海闰安工业传感器有限公司 页码 1/1 光电开关 标准外型尺寸mm 产品序列号 GD15 检测距离Sn 具 DC 备 型 型 漫反射型 10.30CM 反射板型 2M 对射型 5M NPN 常开 GD15-BNZ1 NPN 常闭 GD15-ANZ1 NPN 常开+常闭

Contextual Info: GEC PLESSEY SEMICONDS m 37bflSSS GD15Ô23 7 HIPLSB 43E D “ r-m -5 ^ Ä FLESSE Y w S e m ic o n d u c to rs < ADVANCE INFORMATION MS1003 910 ELEMENT CCD ANALOGUE STORE The Plessey MS1003 is a clock controlled analogue shift re g is te r fo r a p p lic a tio n s in c lu d in g tim e delay,

GD150

Contextual Info: 17 Voltage Stabilizer GD150 A/S CV.216 Lim it Ratings Minimum anode current Maximum anode current Minimum anode supply voltage 5 mA 40 m A 180 V N.B.— Equilibrium conditions are reached after operation for 3 minutes. Characteristics Minimum running voltage at 5 m A

Contextual Info: GD1500-2 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.16k @Temp (øC) (Test Condition)190õ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10k V(FM) Max.(V) Forward Voltage920m @I(FM) (A) (Test Condition)500 @Temp. (øC) (Test Condition)190õ

ecg simulator circuit

Abstract: PIC24FJ256DA210 mini project using PIC microcontroller 2.8" TFT LCD DISPLAY programming with pic touch pad ctmu Application Example code DS39969 pickit connector DS51911A MRF24WB0MA PIC 18 MRF24WB0
Contextual Info: PIC24FJ256DA210 Development Board User’s Guide  2010 Microchip Technology Inc. DS51911A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Penetrox A Electric Joint Compound

Abstract: Penetrox E Electric Joint Compound u1011 Burndy Y35 hypress burndy YGIB Bus Bar torque for metric bolts UL467 YGHC29C29 PIBEAMKIT burndy Y750
Contextual Info: BURNDY Grounding TABLE OF CONTENTS HYGROUND IRREVERSIBLE COMPRESSION GROUNDING AND INSTALLATION TOOLING HYGROUND™ Features and Benefits .D-3 - D-4 Type YGIB .D-18 - D-19 Type YGL-C .D-5

stk 488

Abstract: lmxd6 Sensors PSD MN86072 QFH128-P-1818 MBP2 l-bpi
Contextual Info: Panasonic For Communications Equipment MN86072 Image Processing LSI • Overview The MN86072 enhances image quality by applying various imaging processing techniques to the analog signal from an image sensor. It reproduces halftone images with 64-gradation using two-dimensional MTF

Contextual Info: J ] H A R R IS R T X 2 1 A PRELIMINARY Real Time Express™ Microcontroller Decem ber 1989 Features • Description Fast 100ns Machine Cycle The RTX 2001A is a 16-bit microcontroller which is particu­ larly well suited for very high speed control tasks which are

ma723

Abstract: diode zener MA8150-M block diagram of schottky diode MA8100-M MN3111H QFH048-P-0707 ATML H
Contextual Info: Panasonic For Video Equipment M N 3 1 1 1 H Vertical Driver LSI for Video Camera CC D Area Image Sensor • Overview Pin Assignm ent The M N 3111H is a vertical driver LSI for a two-dimen­ sional interline CCD image sensor. It features a built-in power supply circuit that, in conjunction with such

WD33C93A

Contextual Info: | ‘ .i v - r f " - .- j — ‘ * ! T 4 F •— md . - !— S *4E » WESTERN DIGITAL CORP • « m a s s a o o is s a H m « o c T - 3 2 - ^ 3 - ^ 7 / 1 " .' T * WD33C93A » * . " ' / . I '- * # * «1

Contextual Info: DS2154 PRELIMINARY DALLAS SEMICONDUCTOR DS2154 Enhanced E1 Single Chip Transceiver PACKAGE OUTLINE FEATURES • Complete E1 CEPT PCM-30/ISDN-PRI transceiver functionality • Onboard long and short haul line interface for clock/ data recovery and waveshaping

Contextual Info: DS2152 PRELIMINARY DALLAS DS2152 Enhanced T1 Single Chip Transceiver se m ic o n d u c to r FEATURES PIN ASSIGNMENT • Complete DS1/ISDN-PRI transceiver functionality • Line interface can handle both long and short haul trunks • 32-bit or 128-bit crystal-less jitter attenuator

Contextual Info: CY7B134 CY7B135 CY7B1342 F# CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional D escription • 0.8-micron BiCMOS for high performance T he CY7B134, CY7B135, and CY7B1342 are high-speed BiCMOS 4K x 8 dual-port

CBB-SBC24-X-XX-XX-SM-XX

Abstract: SBC24 SG15 GD151
Contextual Info: 1 2 3 4 5 SPECIFICATIONS Current rating: Contact material: Contact plating: Contact resistance: Insulation material: Insulation resistance: Withstanding: Operating temp.: A B 6 7 9 A 0.5 amps Phosphor bronze Selective gold, gold flash, tin 20 milliohms max.

CMPCI-114A-92-XX-XX

Abstract: C5210R-SH C5210 C5210R lincoln
Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B C C D D SPECIFICATIONS Contact material: Insulator Material: Latch material: Spring material: E F Series CMPCI Mini PCI socket RoHS compliant Rev. Description Date Approved G Drawing Name Approved Howard Checked Lizzy Drawn Tina 0.0 ± 0.35

SLHA-SSL-XX-XX-XX-XXX

Abstract: GD10
Contextual Info: 1 2 3 4 5 6 7 SPECIFICATIONS Current rating: Contact material: Contact plating: Insulator material: Withstanding: Contact resistance: Insulation resistance: Withstanding: Operating temperature: Terminates with: A B Accessories X Y Long Latch 29.2 14.6 Short Latch 25.6 10.6

FDPA-LP-XX-XX

Abstract: GD10
Contextual Info: 1 2 3 4 5 6 7 8 SPECIFICATIONS Current rating: Contact material: Contact plating: Insulator material: Withstanding: Contact resistance: Insulation resistance: Operating temperature: Terminates with: A B 9 1 amp Phosphor bronze Tin, selective gold, gold flash, gold plate

ARS-01-LPD-XX-XX-SMX

Abstract: SM1 SMD
Contextual Info: 1 A B 2 SPECIFICATIONS Current rating: Contact material: Contact resistance: Contact plating: Insulator resistance: Insulator material: Withstanding: Max. processing temperature: Operating temperature: 3 4 5 6 7 SM1 Type 3 amps Phosphor bronze 20 milliohms max.