STLT20
Abstract: STLT20FI
Contextual Info: STLT20 STLT20FI SGS-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STLT20 S TLT20FI V dss R ds oü 60 V 60 V 0 .1 5 0 .1 5 n a Id 15 A 10 A . . . . . . . AVALANC HE RUG G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA A T 100°C
|
OCR Scan
|
stlt20stlt20fitlt20fio-220+4isowatt220stlt20/figc2427dgc36b7c
|
PDF
|
BA60 diode
Abstract: Diode ba60 STP17N05L 17N05L TRANSISTOR BH RW 17n05
Contextual Info: SGS-THOMSON »[R K Q itL C iO T «! S TP 17N05L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP17N 05L . • ■ ■ . . . ■ V d ss RDS(on Id 50 V 0 .1 2 n 17 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
|
OCR Scan
|
17n05lstp17no-220gc364+5ba60 diodediode ba60stp17n05ltransistor bh rw17n05
|
PDF
|
TP6N60
Abstract: 6N60
Contextual Info: *57 SGS-THOMSON iL iO M K I M T P 6 N 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE M TP6N60 V dss R DS on Id 600 V < 1.2 a 6.8 A . TYPICAL RDs(on) = 1 f i • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
|
OCR Scan
|
tp6n606n60 |
PDF
|
