GC3436 Search Results

Contextual Info: 7^237 D D 4 b G 1 2 325 • S 6 T H _ SGSTHOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N50 ■ . . . . V dss RDS on Id 500 V < 6 Q 2 A TYPICAL R ds (or) = 4.6 £2 AVALANCHE RUGGED TECHNOLO GY 100% AVALANCHE TESTED

12n06

Contextual Info: ¿ 5 S G S -T H O M S O N ¡m e ra « 7 S T D 12N05 S T D 12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss STD12N05 50 V STD12N06 60 V R DS on Id a < 0.15 a 12 A < 0.15 12 A • TYPICAL RDS(on) = 0.1 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿ 5 SGS-THOMSON ¡Hiera « 7 STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E V dss STD12N05L 50 V STD12N06L 60 V RüS on Id a < 0.15 a 12 A < 0.15 12 A . TYPICAL RDs(on) = 0.115 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: S G S - T H O M S O N ¿ 5 ¡m e ra « 7 S T D 1n A 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss RDS on Id STD1NA60 600 V < 8 Q. 1.6 A TYPICAL RDS(on) = 7.2 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: S G S - T H O M S O N ¿ 5 ¡U È T O « 7 S T D 6 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STD 6N 10 dss 100 V R DS on Id < 0.4 5 C l 6 A • . ■ . . . ■ . TYPICAL RDS(on) = 0.35 Q. AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: ¿ 5 SGS-THOMSON ¡m era « 7 STK12N05L STK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E STK12N 05L STK12N 06L V dss RDS on Id 50 V 60 V < 0.15 a < 0.15 a 12 A 12 A . TYPICAL RDs(on) = 0.115 Q . . AVALANCHE RUGGED TECHNOLOGY

BD120

Abstract: STK2NA60
Contextual Info: S G S - T H O M S O N ¿ 5 ¡U È T O « 7 S T K 2 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V dss RDS on Id STK2NA60 600 V < 8 Q. 1.9 A . TYPICAL R DS(on) = 7.2 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • . . . . 100% AVALANCHE TESTED

STK14N06

Contextual Info: S G S - T H O M ¿ 5 S T K 14N05 S T K 14N06 S O N ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V R D S o n dss STK14N05 50 V < 0.12 STK14N06 60 V 0.12 < Id a a 14 A 14 A • TYPICAL RDS(on) = 0.1 Q

Contextual Info: S G S - T H O M S O N ¿ 5 ¡U È T O « 7 S T D 8 N 06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STD 8N 06 dss 60 V R DS on Id < 0.2 5 C l 8 A . . • . . . ■ . TYPICAL R DS(on) = 0.21 Q. AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « S T D 2 N 50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STD2N50 • . ■ . . . . dss 500 V R DS on Id < 5 .5 Q. 2 A TYPICAL RDS(on) = 4.5 Q. AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: STD4NB25 N - CHANNEL 250V - 0.95Î2 - 4A - DPAK PowerMESH MOSFET TYPE V STD4N B25 • . . . . . dss 250 V R d S o i i < 1 ,1£2 Id 4 A TYPICAL R D S (on) =0.95 £2 EXTREMELY HIGHdv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

gunther reed relay

Abstract: Gunther relay Gunther - Reed Relays Reed Switch gunther GC2722 GC3823 GC3436 GC1525 GC3525 ORD228VL
Contextual Info: Actuation of Reed Switches with a Permanent Magnet Examples of switching with the use of a moving magnet. The Comus International group of companies consists of: Rotation: Examples of switching through rotational movement. Direct Actuation: N N S Closed