GC1766 Search Results

Contextual Info: GC1766 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.18pì C1/C2 Min. Capacitance Ratio7.0 V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min.800 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7

HA1120

Abstract: 1n9448 1NS471A diodo 216 diodo 2B 1n6449a IN5144 G702A S01718 DIODO 10 W
Contextual Info: D & IS D elect HERM ETICALLY S EA LED G L A S S P A C K A G E D TU N IN G D IO D ES A B R U PT - H Y PER A B R U P T Ul E L E C T R IC A L CH A RACTERISTICS <Ta = 25» C unless otherwise noted 6ENERAL APPLICATIONS Otode Cap. CT)* ÌT1ON04V/1 MHz TYPE Pf

C1756

Abstract: 1N8146 A1930A a1026a 1n8442 S488 GG1767 C1756C A1930
Contextual Info: c t i vo n : CHIP DIODES TO O R D E R A D D " C H IP " TUNING DIODES HIGH Q FOR MANY Ü H F V H F USES L u * i NO. HYPERABRUPT HIGH 0 ABRUPT GOOD 0 R A T IO M # C 2/C30 mm/max 88 M H i mm R A T IO C 2 /C N m m /m ai TYPE NO 04 # HO m in / m * 04 • M MM/

HA1930

Contextual Info: O ^ G S D elect; HERMETICALLY SEALED G L A SS PACKAGED TUNING DIODES HYPERABRUPT Wr ABRUPT E L E C T R IC A L CH A R A CTER ISTICS T a = 25° C unless otherwise noted GENERAL APPLICATIONS Oiode Cap. IC T)* pf Q4 $ 50 MHz RATIO C2/C20 min/typ NO LOW INDUCTANCE