GC 330 Search Results

Contextual Info: •> GOULD AMI a Semiconductors A S IC P ro d u c ts ASIC Products 1.25-micron Gate Arrays Programmable Array GC100K Useable Gates 51,320 GC 50K GC 40K GC 30K 26,266 17,496 GC 25K GC 20K GC 15K GC 10K GC 7K GC 5K GC 3K 16,280 13,122 10,714 7,560 5,264 3,526

900uf

Abstract: CD287GC
Contextual Info: CD 287 GC Series 4 000 - 10 000h at 105°C CD 269 PH • Low Impedance · High Ripple Current · SMPS, UPS 125°C 85°C CD 110 PT smaller CD 287 GC CD 28L QL lower ESR lowest ESR longest life CD 281 LL CD 284 XY Item Characteristics Operating Temperature Range °C

SDM7301-XC

Abstract: SCM7301-XC SDM7301-GC-ZN SDM7301-XC-W TA-NWT-000253 ZBF253D-00 fourth order low pass filter
Contextual Info: Specification : TS-S96D016E Date : October, 2000 Technical Specification for Optical Transceiver Module SDM7301-XC SDM7301-GC 155.52Mb/s 622.08Mb/s other _ Short Haul Intermediate Reach other _ Single 5.0 V Long Haul Long Reach Single 3.3 V

R40/16

Abstract: r40-16 CA3154 CA3154E V11L schematic diagram 12v dc to 3 phase inverter CA31 tv tuner for pc schematic diagram
Contextual Info: CA3154 May 1999 [ /Title CA31 54 /Subject (TV Sync/A GC/Ho rizontal Signal Processor) /Autho r () /Keywords (Harris Semiconductor, TV sync processor, horizontal oscillator, horizontal processor, sync separator, AFC circuit, AGC cir- T UCT ROD ACEMEN 47 P

EFOEC

Abstract: EFOGC4004A4 4069UB panasonic ceramic resonator PANASONIC
Contextual Info: Ceramic Resonators Leaded Built-In Capacitors EFO-EC/GC Series Features • Wide range of oscillation frequency: 3.58 to 35 MHz. • No need of capacitors in oscillation circuit • High accuracy, high stability Initial frequency tolerance: 60.5 % • Excellent temperature characteristics

burndy Y35 Hypress owner manual

Abstract: burndy Y39 Hypress owner manual Burndy Y35 hypress burndy Y35 burndy Y750 UL-467 Penetrox A Electric Joint Compound Y750 REVOLVER HYPRESS GBM STEP MOTOR burndy Y750HS user manual
Contextual Info: GC-08 www.burndy.com CALL 1-800-346-4175 FOR YOUR LOCAL SALES REPRESENTATIVE BURNDY PRODUCTS BURNDY PRODUCTS Grounding Catalog Experience. Technology. Answers. Customer Service Dept. 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 Canada 1-800-361-6975 Quebec

k4n26323ae

Abstract: K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
Contextual Info: 128M GDDR2 SDRAM K4N26323AE-GC 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.7 Jan. 2003

K4D623238B-GC45

Contextual Info: 64M DDR SDRAM K4D623238B-GC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.2 September 2001 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: 64M DDR SDRAM K4D623238B-GC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.2 September 2001 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: 64M DDR SDRAM K4D623238B-GC 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.6 January 2003 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: 128M GDDR-II SDRAM K4N26323AE-GC 128Mbit GDDR-II SDRAM 1M x 32Bit x 4 Banks GDDR-II SDRAM with Differential Data Strobe and DLL Revision 1.5 December 2002 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.5 Dec. 2002

DDR2 x32

Abstract: GC14 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.0 January 2004 Samsung Electronics reserves the right to change products or specification without notice.

Radial

Contextual Info: CD 269 PH Series 4 000h at 125°C • High Reliability at High Temperature · Automotive · Professional Long-Life Applications CD 11GL GL higher voltage lower ESR CD 287 GC CD 269 PH 125°C CD 269L HL longer life Item Characteristics Operating Temperature Range °C

K4D26323RA-GC33

Abstract: GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC36
Contextual Info: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 2.0 January 2003 Samsung Electronics reserves the right to change products or specification without notice.

CDM-AEC-Q100-011

Abstract: VN5R003H-E VN5R003HTR-E VN5R003HTR 17602
Contextual Info: VN5R003H-E 3 mΩ reverse battery protection switch Datasheet − production data Features Max supply voltage VCC -16 to 41 V Operating voltage range VCC -16 to 28 V On-state resistance RON 3 mΩ GA P GC FT00135 HPak • ■ General – Optimized electromagnetic emissions

Contextual Info: VN5R003H-E 3 mΩ reverse battery protection switch Datasheet − production data Features Max supply voltage VCC -16 to 41 V Operating voltage range VCC -16 to 28 V On-state resistance RON 3 mΩ GA P GC FT00135 HPak • ■ General – Optimized electromagnetic emissions

Contextual Info: K4D26323RA-GC * VDD / VDDQ=2.8V * 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.8 July 2002 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.9 August 2002 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: GA Series +105°C, High Ripple Current ^&£;j£ , Ultra Low lmpedance(^fgPMJn;) FEATURES 1. Lower impedance than GC series at 100KHz. 2. Enabled high ripple current by a reduction of ESR at high frequency range. 3. Load life:105* 2000 hours. 4. Suitable for P4 motherboard.

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Table II, add note to Group C end-point test parameters. Update boilerplate paragraphs. -gz 11-01-19 Charles F. Saffle B Add case outline Y. -gc 13-06-20 Charles F. Saffle REV SHEET REV SHEET REV STATUS

Contextual Info: GC Series +105°C, High Ripple Current ^$$jBZ , Ultra Low lm pedance( !Pfliaqn) FEATURES 1. Ultra low impedance at lOOKHz. 2. Enabled high ripple current by a reduction of ESR at high frequency range. 3. Load life : 105°C 2000 hours. 4. Suitable for P4 mother board.

7581a

Abstract: JJ 6L6 6L6GC JJ 6L6-GC 6l6g jj 6L6GC 6l6 triode ra 6L6GC PIN CONNECTION 6L6GC tube 6L6
Contextual Info: 7581-A 7581-A E&ÆGWMOMCS Page 1 BEAM PENTODE FOR AF POWER-AMPLIFIER APPLICATIONS DESCRIPTION A N D RATING The 7581-A is a beam-power pentode primarily designed for use in audio-frequency power-amplifier applications. The 7581-A is unilaterally interchangeable with the 7581 and the 6L6-GC.

capacitor jianghai cd 293

Abstract: CD269 CD 263
Contextual Info: CD 269 PH Series 4 000h at 125°C CD 11G GW CD 281 LL • High Reliability at High Temperature · Automotive · Professional Long-Life Applications 125°C CD 263 BK longer life CD 287 GC higher voltage CD 269 PH 125°C lower ESR lower ESR Item Characteristics

SMD 0J 157 capacitor

Abstract: PC 2500H Part number 543 20 018 00
Contextual Info: CD 284 XY Series 2000 - 10 000h at 105°C CD 269 PH • Lowest Impedance · High Ripple Current · Switching Power Supplies 125°C 85°C CD 110 PT smaller CD 287 GC lower ESR lowest ESR longest life CD 281 LL Radial CD 28L QL CD 284 XY Item Characteristics