GBS TRANSISTOR Search Results

Contextual Info: 3EE D Bi A23b3S0 DGl?GbS 1 H S I P PNP Silicon RF Transistor BFT 92 SIEMENS/ SPCLi SEMICONDS _ • For broadband amplifiers up to 2 G Hz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions!

LTTS e3

Abstract: gbs transistors
Contextual Info: Commerce Control List Supplement No. 1 to Part 774 CATEGORY 3 - ELECTRONICS A. “END ITEMS,” “EQUIPMENT,” “ACCESSORIES,” “ATTACHMENTS,” “PARTS,” “COMPONENTS,” AND “SYSTEMS” Note 1: The control status of equipment and “components” described in 3A001 or 3A002,

Contextual Info: h ~7 > v / 2SD1768S $ /Transistors 2SD 1768S NPN y V 3 > V y ' s v W ^ s tlfr ^ llffl/M e c liu m Power Amp. Epitaxial Planar NPN Silicon Transistor • W K -tf;£@ /D im ension s U n it: mm • 1) VCeo »' ^ (8 0 V ) o 2) U AD C)0 3 ) hFE<7) o 4 ) V c e ( sat

Contextual Info: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.

Contextual Info: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

transistor BD 430

Abstract: Depletion
Contextual Info: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.

Contextual Info: Transistors High-current gain Medium Power Transistor 20V, 0.5A 2SD2114K/2SD2144S •Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. V ebo = 1 2 V (Min.) 3) ^External dimensions (Units: mm) 2SD2114K 2.9±0.2 11 11-+ 00.1

2SC3839K

Abstract: 2SC4084
Contextual Info: h ~7 > v 7. $ / T ransistors 2 C S 3 8 3 9 2SC3839K/2SC4084 K x t f ^ v ^ i / y ^ - ^ N P N v u = ] > h - 7 > v * £ Epitaxial Planar NPN Silicon Transistors 2SC4084 raJS'/SiH aE/R F Amplifier Dimensions U n it: mm 1) f r fT = 2 G H z (Typ.) 2SC 3839K 2SC 4084

EHT COIL

Abstract: C105 R105 R117 TDA8350 TDA9150B internal eht pin diagram horizontal output circuit with EHT TDA8350 equivalent
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors July 1994 Philips Semiconductors Preliminary specification Programmable deflection controller TDA9150B

ha 431 transistor

Abstract: TV horizontal Deflection Systems TDA9150 IEC134 of ic 555 philips 432 T control 00372bS pj 88 diode
Contextual Info: Objective specification Philips Semiconductors Programmable deflection controller PHILIPS INTERNATIONAL FEATURES SbE » T - I 711002b 00372L3 TTD Current source output for high EMC immunity General • <p2 loop with low jitter • Synchronous logic • Dual slicer horizontal flyback input

transistor BD 339

Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
Contextual Info: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.

EHT COIL

Abstract: C105 R105 R117 TDA8350 TDA9151B
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA9151B Programmable deflection controller Preliminary specification Supersedes data of June 1993 File under Integrated Circuits, IC02 Philips Semiconductors July 1994 Philips Semiconductors Preliminary specification Programmable deflection controller

xl 3358

Abstract: function of tv deflection section KA025 tda9151 ic 2n35 data ttl D372 UKA039 gbs transistor RFT Semiconductors
Contextual Info: Philips S em iconductors O bjective specification Programmable deflection controller TDA9151 T - 7 7 - o r - u PH IL IP S INTERNATIONAL FEATURES 711Qfl2b 00 37 2 0 5 S b l 5bE D General • Current source output for high EMC immunity • 6.75,13.5 and 27 MHz clock

UKA720

Abstract: TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555
Contextual Info: INTEGRATED CIRCUITS TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS PHILIPS 71 1 0 0 2 b 00 70 15 5 M33 Preliminary specification Philips Semiconductors Programmable deflection controller

TDK Power Supply MRW

Abstract: K-Line L line tda9151 TDA9151B
Contextual Info: INTEGRATED CIRCUITS TDA9151B Programmable deflection controller Preliminary specification Supersedes data of June 1993 File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS I • 711DA2L, 0 0 7 0 1 0 7 T43 ■ PHILIPS Preliminary specification

IRFI360

Abstract: ALPS 102 IOR 235 transistor 2SA 101 transistor 2SA
Contextual Info: Data Sheet No. PD-9.817 I N T E R N A T I O N A L R E C T I F I E R IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI360 N -C H A N N E L 400 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Part Number

ic SE 135

Abstract: 00jT K49H
Contextual Info: i r — S* • i s — h BA1A4Z Compound Transistor Î& ÎÆ 4# ' r t ü t P N P x □ ^ - fi i t : mm) o ^ M T X i t ÿ f i l l T V ' Î t » ( R i = 10 4 k£2) 6° ¥ O B A 1 A 4 Z b = > > * Ê * JS * Æ fê (T a = n 9 n V 9 9 - 3 - 1 3 V 3 u- 9 y •

MM-555

Abstract: MM452 gbs transistors MM5559 mm450 MM555 MM551 MM-552
Contextual Info: D lffilM . M M 450/M M 550, M M 451/M M 551 M M 4 5 2 /M M 5 5 2 , M M 455/M M 555 M O S-F E T Sw itch e s FEATURES GENERAL Large A nalog In p u t— ± 1 0 V Low S u pply Voltage— V B U LK = + 1 0 V V GG = - 2 0 V Typical O N Resistance— V m = - 1 0 V , 1 5 0 fi

VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN

Abstract: service-mitteilungen Stassfurt servicemitteilungen rft robotron Servicemitteilungen RFT lautsprecher "service-mitteilungen" Rafena KT 300
Contextual Info: SERVICE-MITTEILUNGEN V E B I N O U S T R I E V E R T R IE B R U N D F U N K U N D F E R N S E H E N r a d i o -televisión AUSGABE: 5/73 DATUM: M ai 1973 Mitteilung vom Fachgebiet -Aus- und Weiterbildung der Werktätigenim VEB Industrievertrieb Rundfunk und Fernsehen / Direktion Leipzig

Contextual Info: S i GEC PLESSEY S E M I C O N D U C T O R S ADVANCE INFORMATION DS3607 - 2 0 SL523 100MHz DUAL WIDEBAND LOG AMPLIFIER The SL523B and C are wideband amplifiers for use in successive detection logarithmic IF strips operating at centre frequencies between 10 and 100MHz They are pin

Philips power supply PE 1957

Abstract: jrc 4562 DARLINGTON ARRAYS PQFP80 ST7285C CQFP80 jrc 4565
Contextual Info: ST7285C R 8-BIT MCU FOR RDS WITH 48K ROM, 3 K RAM, ADC, TWO TIMERS, TWO SPIs, I2C AND SCI INTERFACES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 4.5V to 5.5V Supply Operating Range Operates at 8.664MHz Oscillator Frequency for

tfm 7380

Abstract: jrc 4562 Philips power supply PE 1957 jrc 4565 PQFP80 ST7285C icf a 2025 four DARLINGTON ARRAYS part ph5 CQFP80
Contextual Info: ST7285C R 8-BIT MCU FOR RDS WITH 48K ROM, 3 K RAM, ADC, TWO TIMERS, TWO SPIs, I2C AND SCI INTERFACES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 4.5V to 5.5V Supply Operating Range Operates at 8.664MHz Oscillator Frequency for

funkamateur

Abstract: SAL 41 Stern Radio service-mitteilungen "service-mitteilungen" Sonneberg SAL41 scans-048 elektromat Servicemitteilungen
Contextual Info: SERVICE-MITTEILUNGEN 2/ 'ft r a d i o -television VER IN DU STRIEVERTRIEB R U ND FU NK UND F E RN SE H EN Seite AUSGABE: FEBRUAR - KOPFHÖR ERVERSTÄRKER YSV-2 Der VEB ELEKTROMAT DRESDEN hat den Stereo-Kopfhörerver­ stärker YSV-2 entwickelt, der demnächst in das Angebot des

Contextual Info: S G S - T H O M S O N L M 1 2 4 , A - L M 2 2 4 , A L M 3 2 4 , A LOW POWER QUAD OPERATIONAL AMPLIFIERS • LARGE VOLTAGE GAIN : 100dB . VERY LOW SUPPLY CURRENT/AMPLI 3 75 iA . LOW INPUT BIAS CURRENT : 20nA . LOW INPUT OFFSET VOLTAGE : 2mV . LOW INPUT OFFSET CURRENT : 2nA