GB20SLT12 Search Results

GB20SLT12 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
GB20SLT12-247		GeneSiC Semiconductor	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 20A TO247	Original	PDF		5
GB20SLT12-247D		GeneSiC Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 1.2KV 25A TO247D	Original	PDF	765.79KB

GB20SLT12 Price and Stock

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GeneSic Semiconductor Inc GB20SLT12-247 DIODE SIL CARB 1200V 20A TO2472
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GB20SLT12-247	Bulk			240	1 - 10 - 100 - 1000 $11.51 10000 $11.51	Buy Now
Navitas Semiconductor GB20SLT12-220 SiC Schottky Diodes 1200V 50A SiC Schottky Rectifier
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Mouser Electronics	GB20SLT12-220					1 - 10 - 100 - 1000 $18.85 10000 $18.85	Get Quote

GB20SLT12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: GB20SLT12-247 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB20SLT12-247 247AC TEMP-24) GB20SLT12 48E-17 15E-09 00E-10 00E-03	PDF
Contextual Info: GB20SLT12-247 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB20SLT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * * GeneSiC Semiconductor Inc.	Original	GB20SLT12-247 GB20SLT12-247. 04-SEP-2013 GB20SLT12-247 TEMP-24) GB20SLT12 48E-17 15E-09	PDF
Contextual Info: GB20SLT12-247 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 145°C) QC Features Package •        RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior	Original	GB20SLT12-247 247AC TEMP-24) GB20SLT12 48E-17 15E-09 00E-10 00E-03	PDF
Contextual Info: GB20SLT12-247 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability	Original	GB20SLT12-247 247AC TEMP-24) GB20SLT12 48E-17 15E-09 00E-10 00E-03	PDF
Contextual Info: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA20SICP12-263 O-263 SIPC12 GA20SIPC12 00E-47 26E-28 98E-10 22E-09 00E-03	PDF
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l	PDF
Contextual Info: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA16JT17-247 O-247AB GA16JT17 03E-47 72E-28 68E-10 72E-09 00E-03	PDF
Contextual Info: GA20JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA20JT12-247 O-247AB GA20JT12 00E-47 26E-28 98E-10 22E-9 50E-3	PDF
IXDD614 Contextual Info: GA10JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA10JT12-263 O-263 GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3 IXDD614	PDF
Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA10JT12-247 O-247AB GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3	PDF
IGBT DIVER IC Contextual Info: GA16JT17-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch	Original	GA16JT17-247 O-247AB GA16JT17 03E-47 719E-28 68E-10 72E-09 00E-03 IGBT DIVER IC	PDF