GB10SLT12 Search Results

Contextual Info: GB10SLT12-252 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: GB10SLT12-220 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: GB10SLT12-252 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 150°C) QC Features Package •        RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior

Contextual Info: GB10SLT12-220 Silicon Carbide Power Schottky Diode VRRM IF Tc = 25°C IF (Tc ≤ 150°C) QC Features Package •        RoHS Compliant Industry’s leading low leakage currents 175 °C maximum operating temperature Temperature independent switching behavior

Contextual Info: GB10SLT12-220 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB10SLT12-220. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 20-SEP-2013 $ * * GeneSiC Semiconductor Inc.

Contextual Info: Electrical Datasheet* GB10SLT12-CAL Silicon Carbide Power Schottky Diode VRRM VF IF QC = = = = 1200 V 1.55 V 10 A 52 nC Features •     1200 V Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Fast switching speeds

GB10SLT12-CAL

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB10SLT12-CAL Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 1200 V 25 A 31 nC Features •       1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: GB10SLT12-220 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

LTspice

Contextual Info: GB10SLT12-252 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB10SLT12-252. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * * GeneSiC Semiconductor Inc.

GB10SLT12-CAL SPICE

Abstract: high-temperature-sic-bare-die
Contextual Info: Die Datasheet GB10SLT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB10SLT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 20-SEP-2013 $ * *

Contextual Info: GB10SLT12-252 Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •        RoHS Compliant 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability

Contextual Info: GA05JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

hcpl 322j

Abstract: hcpl-322j HCPL316
Contextual Info: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA05JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch