GAN HIGH POWER AMPLIFIER Search Results

Gan hemt transistor RFMD

Abstract: RF393x transistor hemt RF3930 HIGH POWER TRANSISTOR rf gan amplifier GaN amplifier 120W silicon carbide power transistor gaas RF3933
Contextual Info: GaN Technology Update Technical Update RFMD RFMD® GaN High-Power Transistors Gallium Nitride GaN High Power Transistors Features: • High power density of up to 5W/mm • Advanced 0.5 m GaN HEMT process • 50V bias operation • High gain > 14 dB @ 2.1GHz

GaN ADS

Abstract: GaN amplifier 120W transistor hemt RF393x
Contextual Info: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,

B4846

Abstract: S21 Package GRM188B11H102KA01D CS3376C
Contextual Info: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

EKZE101

Contextual Info: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN26C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.3dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain : 17dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

Gan hemt transistor RFMD

Abstract: RF3932 HIGH POWER TRANSISTOR RF393x Gan transistor rf3931 RF3930 GaN amplifier RF3933 RF3934
Contextual Info: RFMD. Gallium Nitride GaN High Power Transistors (Advance Notification) Introducing the development of RFMD’s unmatched high power transistor (HPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5um GaN high electron

GaN amplifier 100W

Abstract: class h amplifier 100w ZHL-100W-GAN ZHL-100W-GANX rf power amplifier 100w fm amplifier 100w rf amplifier 100w GaN 100 watt BT1165 amplifier mini-circuits
Contextual Info: Coaxial High Power Amplifier 50Ω 100W ZHL-100W-GAN+ 20 to 500 MHz The Big Deal • • • • • High Efficiency, 50% typ. High Output Power, 100W GaN Output Stage High Output IP2, +84 dBm typ. High Output IP3, +60 dBm typ. ZHL-100W-GAN+ Price $2395.00 Qty. 1-9

Contextual Info: September 30, 2014 MACOM Extends Industry Leading GaN Portfolio with S-Band High Power Pallet and Hybrid Amplifiers 350 Wpk GaN Power Pallet, MAPG-002729-350L00, provides rugged, high power solution in small size 85 Wpk GaN Hybrid Amplifier, MAMG-002735-085L0L, offers integrated, fully matched SMT solution

Contextual Info: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 43.5dBm typ. @ Psat Power Gain : 18dB(typ.) @ f=2.60GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

RF565-2

Abstract: 440 transistors
Contextual Info: RFMD. High-Power GaN Matched Power Transistors MPT RFMD’s MPT products are high-power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high-power density

EGN26C030MK

Contextual Info: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN35C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 16.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN21C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 19dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN21C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 43.5dBm typ. @ Psat Power Gain : 19dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN21C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN21C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 19dB(typ.) @ f=2.14GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

RF565-2

Contextual Info: RFMD . High-Power GaN Matched Power Transistors MPT RFMD’s MPT products are high power discrete GaN amplifiers designed for radar, air traffic control and surveillance, and general purpose broadband amplifier applications. Using an advanced high power density

GaN amplifier temperature compensation

Contextual Info: Part Number: QBS-561 Broadband 32 Watt GaN Power Amplifier 2400 to 6000 MHz high power, class AB design utilizing GaN technology Features *Similar Model • 32 Watts Typical Saturated Output Power • Rugged GaN Technology • Adaptive Biasing to Promote Efficiency

QBS-559

Contextual Info: Part Number: QBS-559 Broadband 50 Watt GaN Power Amplifier 20 to 800 MHz high power, class AB design utilizing GaN technology Features *Similar Model • 65 Watts Typical Saturated Output Power • Rugged GaN Technology • Adaptive Biasing to Promote Efficiency

Gan transistor

Abstract: Gan hemt transistor transistor GaN
Contextual Info: Technical Update RFMD GaN High-Power Transistors Gallium Nitride GaN High-Power Transistors Features: • High-Power Density of up to 4W/mm • Advanced 0.5µm GaN HEMT process • 28V bias operation • High Gain up to 16 dB • Internally matched • Advanced Heat Sink Package

Contextual Info: Part Number: QBS-560 Broadband 32 Watt GaN Power Amplifier 700 to 2500 MHz high power, class AB design utilizing GaN technology Features o 32 Watts Typical Saturated Output Power o Microprocessor Based Control o Rugged GaN Technology o Adaptive Biasing to Promote Efficiency

Contextual Info: EGNC160MK GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 18dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater