GAN AMPLIFIER 100W Search Results

ATC800B680JT

Contextual Info: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  

BW030

Contextual Info: RFG1M20090 RFG1M20090 1.8 GHz TO 2.2GHz 90 W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Modulated Power>90W  Advanced Heat-Sink Technology 

Contextual Info: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  Single Circuit for 1.9GHz to

Contextual Info: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >120W  Advanced Heat-Sink Technology 

Contextual Info: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology

ATC100B100JT

Abstract: ATC100B1R8BT alt110
Contextual Info: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power>120W Advanced Heat-Sink Technology

GaN amplifier 100W

Abstract: class h amplifier 100w ZHL-100W-GAN ZHL-100W-GANX rf power amplifier 100w fm amplifier 100w rf amplifier 100w GaN 100 watt BT1165 amplifier mini-circuits
Contextual Info: Coaxial High Power Amplifier 50Ω 100W ZHL-100W-GAN+ 20 to 500 MHz The Big Deal • • • • • High Efficiency, 50% typ. High Output Power, 100W GaN Output Stage High Output IP2, +84 dBm typ. High Output IP3, +60 dBm typ. ZHL-100W-GAN+ Price $2395.00 Qty. 1-9

GaN 100 watt

Abstract: rf amplifier 100w ZHL-100W-GANX
Contextual Info: Coaxial High Power Amplifier 50Ω 100W ZHL-100W-GAN+ 20 to 500 MHz The Big Deal • • • • • High Efficiency, 50% typ. High Output Power, 100W GaN Output Stage High Output IP2, +84 dBm typ. High Output IP3, +60 dBm typ. ZHL-100W-GAN+ Price $2395.00 Qty. 1-9

Contextual Info: Coaxial High Power Amplifier 50Ω 100W ZHL-100W-GAN+ 20 to 500 MHz The Big Deal •฀ •฀ •฀ •฀ •฀ High฀Eficiency,฀50%฀typ. High฀Output฀Power,฀100W GaN฀Output฀Stage High฀Output฀IP2,฀+84฀dBm฀typ. High฀Output฀IP3,฀+60฀dBm฀typ.

Contextual Info: TGA2813 3.1 – 3.6GHz 100W GaN Power Amplifier Applications • Radar Product Features        Functional Block Diagram Frequency Range: 3.1 – 3.6GHz PSAT: 50.7dBm Power Gain: > 22dB PAE: 55% Bias: VD = 30V, IDQ = 150mA, VG = -3.0V Typical

MGFC50G

Contextual Info: < C band internally matched power GaN HEMT > MGFC50G5867 5.8 – 6.7 GHz BAND / 100W OUTLINE DRAWING Unit : m illim eters FEATURES 24.0±0.3 • Amplifier for C-band SATCOM ② φ2.2 0.6±0.2 QUALITY 4.4+0/-0.3 2MIN ② 2.4 APPLICATION ① 8.0±0.2 17.4±0.2

GaN amplifier 100W

Abstract: ZHL-100W-GAN
Contextual Info: High Power Amplifier ZHL-100W-GAN+ Typical Performance Data NOISE FIGURE POUT @ 1 dB COMPRESSION POUT @ 3 dB COMPRESSION OUTPUT IP2 OUTPUT IP3 OUT dB (dBm) (dBm) (dBm) (dBm) 30V 30V 30V 30V 30V 30V 1.36 1.20 9.76 48.67 49.54 78.14 61.56 VSWR (:1) FREQ. GAIN

Contextual Info: Gallium Nitride MMIC 12W 7.5 – 12.0 GHz Power Amplifier AM07512041TM-SN April 2014 Preliminary DESCRIPTION AMCOM’s AM07512041TM-SN-R is a broadband GaN MMIC power amplifier. It has 20dB gain, and 41 dBm output power over the 7.5 to 12.0GHz band. The AM07512041TM-SN-R is in a ceramic package with a flange and

AM206541TM-SN-R

Abstract: amcomusa
Contextual Info: Gallium Nitride MMIC 12W 2.0 – 6.0 GHz Power Amplifier AM206541TM-SN May 2014 Rev 1 DESCRIPTION AMCOM’s AM206541TM-SN-R is a broadband GaN MMIC power amplifier. It has 26dB gain, and 41 dBm output power over the 2.0 to 6.5GHz band. The AM206541TM-SN-R is in a ceramic package with a flange and straight

A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

Abstract: GaN amplifier Microwave Development Company dummy load volterra N6030 GaN amplifier 100W 4G base station power amplifier combiner THEORY Square D DPA 12 MAR-2 MMIC
Contextual Info: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

4.1 amplifier 100w

Abstract: ZHL-100W-GAN GaN amplifier 100W
Contextual Info: High Power Amplifier ZHL-100W-GAN+ Typical Performance Curves Directivity Gain 50 50 47 48 44 44 41 Directivity dB Gain (dB) 30V 46 30V 42 40 38 30V 38 35 32 29 36 26 34 23 32 20 30 50 100 150 200 250 300 350 400 450 500 50 100 150 200 250 300 350 400 450

combiner THEORY

Abstract: amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318
Contextual Info: AN RFMD WHITE PAPER RFMD. ® Wideband 400W Pulsed Power GaN HEMT Amplifiers Matthew J. Poulton, Karthik Krishnamurthy, Jay Martin, Bart Landberg, Rama Vetury, David Aichele RF Micro Devices, Inc. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, and PowerStar® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective

Contextual Info: High Performance RF for the Most Demanding Applications GaN High Performance RF Power, GaN NXP’s mainstream GaN Technology Enables an NXP solutions offering that is technology agnostic NXP’s LDMOS and GaN can be combined in a line-up for optimum performance and cost

Contextual Info: MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Features •       GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package

GaN amplifier 100W

Abstract: MAGX-001220-100L00 Gan on silicon transistor
Contextual Info: MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Features •       GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package

MAGX-000035-100000

Abstract: GaN amplifier 100W transistor 15 GHz Gan on silicon transistor MAGX-000035-SB2PPR 2.4 GHz rf amplifier 100w 100WCW MAGX-000035
Contextual Info: MAGX-000035-100000 GaN HEMT Power Transistor 100W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation

NPTB0004

Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
Contextual Info: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2

GaN amplifier

Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
Contextual Info: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2

LK141

Abstract: 60W VHF TV RF amplifier
Contextual Info: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation