GAAS MMIC SPDT TERMINATED SWITCH DC - 6GHZ Search Results

NN12

Abstract: P35-4211-0 P35-4227-0
Contextual Info: P35-4227-0 GaAs MMIC SPDT REFLECTIVE/TERMINATED SWITCH, DC - 6GHz Features • • Broadband performance High Isolation; 40dB typ at 3GHz • Low insertion loss; 0.8dB typ at 3GHz • Ultra low DC power consumption • Fast switching speed; 3ns typical Description

P35-4227-000-200

Abstract: P35-4227-0 GaAs MMIC SPDT TERMINATED SWITCH DC - 6GHz NN12
Contextual Info: Data sheet GaAs MMIC SPDT Reflective/Terminated Switch, DC - 6GHz Features The P35-4227-000-200 is a high performance Gallium Arsenide single pole double throw broadband RF switch. It is suitable for use in broadband communications and instrumentation applications. The RF outputs can be

GaAs MMIC SPDT TERMINATED SWITCH DC - 6GHz

Abstract: GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz 4227 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz 4227 P35-4227-C06-200 P35-4227-C06-300 4227 SPDT NN12
Contextual Info: Data sheet GaAs MMIC SPDT Terminated Switch, DC - 6GHz The P35-4227-C06-300 is a high performance Gallium Arsenide single pole double throw broadband RF switch. It is suitable for use in broadband communications and instrumentation applications. A 50 Ω termination is presented

NN12

Abstract: P35-4227-0
Contextual Info: P35-4227-0 Marconi Optical Components GaAs MMIC SPDT Reflective/Terminated Switch, DC - 6GHz Features • · · · · Broadband performance High Isolation; 40dB typ at 3GHz Low insertion loss; 0.8dB typ at 3GHz Ultra low DC power consumption Fast switching speed; 3ns typical

P35-4227-C06-200

Abstract: NN12
Contextual Info: P35-4227-C06-200 Marconi Optical Components GaAs MMIC SPDT Terminated Switch, DC - 6GHz Features • · · · · · Broadband performance High isolation; 32dB typ at 3GHz Low insertion loss; 1.0dB typ at 3GHz Ultra low DC power consumption Fast switching speed; 3ns typical

P35-4227-C06-200

Abstract: Marconi NN12
Contextual Info: P35-4227-C06-200 GaAs MMIC SPDT TERMINATED SWITCH, DC - 6GHz Features • Broadband performance • High isolation; 32dB typ at 3GHz • • Low insertion loss; 1.0dB typ at 3GHz Ultra low DC power consumption • Fast switching speed; 3ns typical • SO8 surface mount ceramic package

GaAs MMIC SPDT Switch DC-3GHz

Abstract: EMS101-C
Contextual Info: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY Caution! ESD sensitive device.

EMS101-C

Abstract: 100umx100um
Contextual Info: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 09/29/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY

Contextual Info: EMS101-C ISSUED DATE: 07-18-03 PRELIMINARY DATA SHEET DC – 6GHz GaAs MMIC SPDT SWITCH FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

EMS101-C

Abstract: 7371711 DR 25 insertion loss
Contextual Info: EMS101-C DATA SHEET Release Date: March 7, 2003 DC-6GHz GaAs MMIC SPDT SWITCH FEATURES l l l l l l l BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY

EMS101-P

Contextual Info: EMS101-P DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 03/31/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY

rf switch spdt

Abstract: GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz GaAs MMIC SPDT Switch DC 3GHz EMS101-P power rf switch DC-6GHz
Contextual Info: EMS101-P DATA SHEET Release Date: March 7, 2003 DC-6GHz GaAs MMIC SPDT SWITCH FEATURES l l l l l l l BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY

Contextual Info: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 03/31/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY

Contextual Info: '' *41 HITTITE MICROWAVE CORPORATION GaAs MMIC Broadband SPDT Switch HMC108 PRELIMINARY DATASHEET, MAY 1991 Features BANDWIDTH: DC-6GHz LOW INSERTION LOSS: HIGH ISOLATION <0.8dB >30dB General Description Typical Performance The HM C108 chip is a fast, low-loss SPDT

Contextual Info: -u: v, <4 ^ HITTITE MICROWAVE CORPORATION GaAs MMIC Non-Reflective SPDT Switch HMC104 PRELIMINARY DATA SHEET, MAY 1991 Features BANDWIDTH: LOW INSERTION LOSS: HIGH ISOLATION: DC-6GHz <1dB >40dB Typical Performance General Description °r *1r The HMC104 chip is a fast, broadband

Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL

Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL

Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 50 or 75 Applications  Low Insertion Loss: 0.30dB at 1980MHz  High Isolation: 37dB at 2GHz  High IP3: >75dBm at 2GHz

RFSW1012TR7

Abstract: RFMD PA LTE DS1303 RFSW1012SQ
Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL

RFSW1012TR7

Abstract: RFSW1012 SW1012-410 SW1012-411 RFMD PA LTE
Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 50: or 75: Applications „ Low Insertion Loss: 0.30dB at 1980MHz „ High Isolation: 37dB at 2GHz „ High IP3: >75dBm at 2GHz

Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL

rf switch spdt

Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL

RFSW1012SQ

Abstract: RF238 RFSW1012PCK-410 RFSW1012 RF-1 GaAs MMIC SPDT TERMINATED SWITCH DC 6GHz RFSW1012PCK-411 rf switch spdt
Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features  5MHz to 6000MHz Operation  50 or 75 Applications GND 1 9 VDD 2 8 EN  High Isolation: 37dB at 2GHz GND 3 7 CTRL

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE