100UMX100UM Search Results

9015B

Abstract: 9014b C 9015b a3101 C 9014B
Contextual Info: 9015B 9015B Silicon PNP Epitaxial Transistor Description :The 9015B is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9014B Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um

Contextual Info: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 03/31/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY

transistor bc846

Abstract: BC846 BC856
Contextual Info: BC846 BC846 Silicon NPN Epitaxial Transistor Description :The BC846is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC856 Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um

HA 7423

Contextual Info: HARRIS SEMICOND SECTOR i» fflsss SÛE D December 1992 Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K or 1 Mega-RAD Si • 43D2271 GD4M230 IbT « H A S HCTS191MS Radiation Hardened Synchronous 4-Bit Up/Down Counter Pinouts 16 PIN CERAMIC DUAL-IN-LINE

piezoelectric buzzer 12V

Abstract: circuit Buzzer 12v three and half digit 7 SEGMENT LCD DISPLAY BUZZER PIEZO-ELECTRIC 1.5V countdown timer 5. buzzer alarm 7 segment countdown timer Countdown oscillator buzzer 12v only Buzzer 12v
Contextual Info: Preliminary Specification RCL Semiconductors Ltd. Three and Half Digits Countdown Timer_C 6 0 0 1 A -1 GENERAL DESCRIPTION The C6001A-1 is a three and half digits count-down tim er CMOS LSI circuit. It can directly drive three and half digits LCD and alarm piezoelectric buzzer. The maximum countdown tim e is 20 hours.

GaAs MMIC SPDT Switch DC-3GHz

Abstract: EMS101-C
Contextual Info: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY Caution! ESD sensitive device.

9014b

Abstract: 9015B C 9014B C 9015b SAT Line Amplifier 9014b transistor
Contextual Info: 9014B 9014B Silicon NPN Epitaxial Transistor Description :The 9014B is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9015B Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um

transistor A1015

Abstract: A1015 A1015 PNP TRANSISTOR A1015 equivalent transistor pnp a1015 ic a1015 c1815 pnp A1015 DATASHEET c1815 pnp a1015
Contextual Info: A1015 A1015 Silicon PNP Epitaxial Transistor Description: The A1015 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to C1815 Chip Appearance

transistor C1815

Abstract: C1815 A1015 npn c1815 transistor C1815 NPN Transistor NPN C1815 C1815 equivalent ic c1815 c1815 symbol npn TRANSISTOR c1815
Contextual Info: C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications Features: ●Excellent hFE Linearity ●Complementary to A1015 Chip Appearance

Contextual Info: EMS101-C ISSUED DATE: 07-18-03 PRELIMINARY DATA SHEET DC – 6GHz GaAs MMIC SPDT SWITCH FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

BC846

Abstract: BC856
Contextual Info: BC856 BC856 Silicon PNP Epitaxial Transistor Description :The BC856is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC846 Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um

EMS101-C

Abstract: 100umx100um
Contextual Info: EMS101-C DC-6GHz GaAs MMIC SPDT SWITCH UPDATED 09/29/2008 FEATURES z z z z z z z BROADBAND PERFORMANCE HIGH ISOLATION LOW INSERTION LOSS LOW DC POWER CONSUMPTION FAST SWITCHING SPEED SI3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH RELIABILITY