GAAS LOGIC Search Results

DM74SL04

Abstract: IC DM74LS04 SW109 SW-109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419 SWD-119
Contextual Info: S2079 Application Note Drivers for GaAs FET Switches And Digital Attenuators Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs

GaAs SPDT IC FET

Abstract: SW-239TR MESFET Application
Contextual Info: Key Application Features of MMIC GaAs and Pin Diode* Switches Applications Features of PIN Diode and GaAs FET Switches In SOIC type plastic packages the GaAs FET switches can handle up M /A -COM manufactures both PIN diodes and GaAs FET sem icon­ able that operate to 3 GH z as analog attenuators, digital attenuators

smd C1D

Abstract: marking code C1d SMD l0131 datasheet ic 4060 Q62702-L0132 BGV503 BGV903 marking c2d GPS09230 negative voltage regulator ic
Contextual Info: GaAs Support IC BGV503 / BGV903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV503, BGV903 – for cellular phones • BGV503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s

Contextual Info: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with

Contextual Info: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with

C01A

Abstract: GaAs p-i-n diodes a1711
Contextual Info: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with

Contextual Info: Order this document by MC33169/D MC33169 Advance Information GaAs Power Amplifier Support IC GaAs POWER AMPLIFIER SUPPORT IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This

rfsw2045

Abstract: RFSW2045DC RFSW2045D RFSW-2045
Contextual Info: RFSW2045 RFSW2045DC to 16 Ghz SP4T pHEMT GaAs Switch DC TO 16GHz SP4T pHEMT GaAs SWITCH Package: QFN, 24 pin, 0.8mmx4mmx4mm GND 6 Features  Low Insertion Loss: 2.4dB at 16GHz  High Isolation: 38dB at 16GHz  21nS Switching Speed  GaAs pHEMT Technology

Contextual Info: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s

TL272

Abstract: MRFIC0903R2
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC0903 Broadband GaAs Sw itch The MRFIC0903 is an integrated GaAs SPDT switch designed for transceivers operating in the 100 MHz to 2.0 GHz frequency range. The design utilizes Motorola’s advanced GaAs RF process to yield superior performance in

marking code C1d SMD

Abstract: smd C1D Q62702-L0131 Q62702-L0132 marking bgv P-TSSOP-10-1 5v regulator c2pr
Contextual Info: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s

Contextual Info: RFSW2041 RFSW2041DC to 20Ghz SPDT pHEMT GaAs Switch DC TO 20GHz SPDT pHEMT GaAs SWITCH Package: QFN, 16-pin, 0.8mm x 3mm x 3mm 1 Features  Low Insertion Loss: 1.7dB at 20GHz  High Isolation: 38dB at 20GHz  20nS Switching Speed  GaAs pHEMT Technology

marking code C1d SMD

Abstract: smd C1D lowpassfilter marking bgv MARKING CODE SMD IC 503
Contextual Info: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

Drivers for GaAs FET Switches and Digital Attenuators

Abstract: SW SPDT rf attenuator 349 SW-109 ttl and cmos digital ic DC bias of gaas FET IC DM74LS04 DM74SL04 motorola diode 8296 SW-437
Contextual Info: Drivers for GaAs FET Switches and Digital Attenuators S2079 V4 Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application

reflective switch 5ghz

Abstract: RFSW2045
Contextual Info: RFSW2045 RFSW2045DC to 16Ghz SP4T pHEMT GaAs Switch DC TO 16GHz SP4T pHEMT GaAs SWITCH Package: QFN, 24 pin, 0.8mm x 4mm x 4mm GND 6 Features  Low Insertion Loss: 2.4dB at 16GHz  High Isolation: 38dB at 16GHz  21ns Switching Speed  GaAs pHEMT Technology

Nippon capacitors

Contextual Info: O rder this docum ent by M C33169/D MOTOROLA Advance Information GaAs POWER AMPLIFIER SUPPORT IC GaAs Power Am plifier Support 1C SEMICONDUCTOR TECHNICAL DATA The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This

Contextual Info: TOSHIBA UNDER DEVELOPM ENT PRELIM INARY TLP3113 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP31 1 3 M EASURING HIGH-FREQUENCY EQUIPMENT HIGH-SPEED LOGIC IC TESTERS HIGH-SPEED M EM O R Y TESTERS The TLP3113 consists of a GaAs infrared emitting diode optically

Contextual Info: TOSHIBA TLP3540 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP3540 MEMORY TESTERS LOGIC 1C TESTERS DATA RECORDING EQUIPMENT MEASURING EQUIPMENT TLP3540 is a photorelay and consists of a GaAs infrared em itting diode optically coupled to a photo-MOSFET in a 8-pin DIP package

NJG1635AHB6

Abstract: NJG1635
Contextual Info: NJG1635AHB6 SPDT SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1635AHB6 is a GaAs SPDT switch IC suited for mobile handset, WiBro and WiMAX devices. This switch features high power handling, low insertion loss, high isolation. This switch includes logic decoder function, and can be operated by

NJG1648

Abstract: NJG1648HB6
Contextual Info: NJG1648HB6 DPDT SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1648HB6 is a GaAs DPDT switch IC that features low loss, low current consumption and low control voltage. This IC includes logic decoder, and can be operated by 1bit control signal at low control voltage from +1.3V.

Contextual Info: NJG1635AHB6 SPDT SWITCH GaAs MMIC • GENERAL DESCRIPTION NJG1635AHB6 is a GaAs SPDT switch IC suited for mobile handset, WiBro and WiMAX devices. This switch features high power handling, low insertion loss, high isolation. This switch includes logic decoder function, and can be operated by

mc331694

Abstract: Voltage Doubler application mc3316940 RF switch negative voltage generator
Contextual Info: 8 < MOTOROLA > MC33169 A dvance Inform ation GaAs Power Amplifier Support 1C GaAs POWER AMPLIFIER SUPPORT IC The M C33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM- PCN and DECT. This device provides negative voltages for full depletion of Enhanced MESFETs

Contextual Info: NJG1535HD3 SPDT SWITCH GaAs MMIC • GENERAL DESCRIPTION NJG1535HD3 is a GaAs SPDT switch IC suited for antenna switch of cellular phone handset. This switch features high power, low loss, high isolation and the low switch current. This device includes logic decoder function, and can be