GAAS FET OPERATING JUNCTION TEMPERATURE Search Results

power Junction FET advantages and disadvantages

Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor

FR4 Prepreg for RF 06 layer PCB

Abstract: Ablestik 84-1 lmis N4000-13 ablestik ablebond TRF1123 TRF1223 C001 ablebond ablestik m0021
Contextual Info: Application Report SLWA038 – June 2005 Junction Temperature of TRF1123/TRF1223 and Recommended PCB Layout Guidelines Tim McGovern . Wireless Infrastructure - Radio ABSTRACT

high frequency transistor ga as fet

Abstract: ATP-1054 bipolar transistor s-parameter high power FET transistor s-parameters Transistor s-parameter
Contextual Info: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .

high power FET transistor s-parameters

Abstract: high frequency transistor ga as fet ATP-1054 bipolar transistor ghz s-parameter NF50 RF Transistor s-parameter vacuum tube amplifier DC bias of gaas FET
Contextual Info: High-Frequency Transistor Primer Part IV GaAs FET Characteristics Table of Contents I. II. III. IV. V. VI. VII. Basic Terminology . Transistor Structure .

P012

Abstract: ISO-14001 KP028J P0120008P RR0816 marking c7 sot-89
Contextual Info: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure

P0110009P

Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89
Contextual Info: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure

fet 741

Abstract: P0110002P KP022J P0120002P RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate
Contextual Info: Technical Note P0120002P 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)

KP027J

Abstract: P0120007P RR0816
Contextual Info: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure

P0110003P

Abstract: P0120003P ISO-14001 KP023J RR0816 GaAS fet sot89
Contextual Info: P0120003P Technical Note 800mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +27 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure

eudyna transistors catalog

Abstract: ISO-14001 KP024J P0120004P RR0816 marking c7 sot-89 SOT89 marking 1Ko PIN DIAGRAM of ic 4028
Contextual Info: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package

P0110009P

Abstract: gaas fet marking a ISO-14001 KP029J P0120009P RR0816 48dBm High power fet 2.4ghz
Contextual Info: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package

sumitomo 131 datasheet

Abstract: DC 8881 ml marking ml marking sot 89 ISO-14001 KP028J P0120008P RR0816
Contextual Info: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package

ml marking sot 89

Abstract: bc 339 DC 8881 ml marking ISO-14001 KP024J P0120003P P0120004P RR0816 IDS400
Contextual Info: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package

DC 8881

Abstract: umt1n applications P0110003P ml marking ml marking sot 89 ISO-14001 KP023J P0120003P RR0816 GaAS fet sot89
Contextual Info: P0120003P Technical Note 800mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +27 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package

sumitomo 131 datasheet

Abstract: P0120002P ml marking sot 89 ISO-14001 KP022J RR0816 marking c7 sot-89 P0110002P
Contextual Info: P0120002P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)

GaAs FET operating junction temperature

Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .

A2732

Abstract: AN1030 nec calculator chips
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1030 Microwave Power GaAs Device Thermal Resistance Basics 1-INTRODUCTION 2-DEFINITION OF THERMAL IMPEDANCE RTH The operating temperature of GaAs power devices affects their reliability and RF performance. Since the majority of

A2732

Abstract: AN1032
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1032 Microwave Power GaAs Device Thermal Resistance Basics 1-INTRODUCTION 2-DEFINITION OF THERMAL IMPEDANCE RTH The operating temperature of GaAs power devices affects their reliability and RF performance. Since the majority of

SPF-3143

Abstract: sot-343 as DC-10 DC bias of gaas FET SOT343 lna
Contextual Info: Preliminary Preliminary Product Description Sirenza Microdevices’ SPF-3143 is a high performance 0.5µm pHEMT Gallium Arsenide FET. This 600µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device can

GaAsTEK

Contextual Info: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply

F31Z

Abstract: SPF-3143Z GaAs FET operating junction temperature SPF3143Z SPF-3143
Contextual Info: SPF-3143Z Product Description Product Features • Available in Lead free, RoHS compliant, & Green packaging • DC-3.5 GHz Operation • 0.58 dB NFMIN @ 2 GHz • 21 dB GMAX @ 2 GHz • +31 dBm OIP3 5V,40mA • +17.7 dBm P1dB (5V,40mA) • Low Current, Low Cost

Contextual Info: AdvancedPreliminary Information Product Description Sirenza Microdevices’ SPF-3143 is a high performance 0.5µm pHEMT Gallium Arsenide FET. This 600µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device can

Contextual Info: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM / [ FEATURES r> \ j Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 £2 Input/Output Impedance Self-Aligned MSAG MESFET Process

F31Z

Abstract: SPF-3143Z SPF-3143 SPF3143Z ZL 264 OIP35
Contextual Info: SPF-3143Z SPF-3143Z Low Noise pHEMT GaAs FET LOW NOISE pHEMT GaAs FET NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-343 Product Description Features „ DC to 3.5 GHz Operation „ 0.58 dB NFMIN at 2 GHz „ 21 dB GMAX at 2 GHz „ + 31 dBm OIP3 5 V,40 mA